Results 31 to 40 of about 271,965 (237)
Trap Identification in Gate-All-Around Vertically Stacked Si n-channel Nanosheet FETs
International audienceIn this article low frequency noise (LFN) spectroscopy in n-type Si-channel gate-all-around (GAA) vertically stacked lateral nanosheet (NS) FETs with different numbers of nanosheets, and gate lengths is applied. From the temperature
Tahiat, Abderrahim +3 more
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Narrow Sub-Fin Technique for Suppressing Parasitic-Channel Effect in Stacked Nanosheet Transistors
A new approach of narrowing sub-fin with little extra process cost for suppressing parasitic-channel-effect (PCE) on vertically-stacked horizontal gate-all-around (GAA) Si nanosheet field-effect-transistors (NS-FETs) is proposed.
Jie Gu +11 more
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Lg = 50 nm Gate-All-Around In0.53Ga0.47As Nanosheet MOSFETs with Regrown In0.53Ga0.47As Contacts
In this paper, we report the fabrication and characterization of Lg = 50 nm Gate-All-Around (GAA) In0.53Ga0.47As nanosheet (NS) metal-oxide-semiconductor field-effect transistors (MOSFETs) with sub-20 nm nanosheet thickness that were fabricated through ...
Jae-Hak Lee +18 more
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International audienceIn this study, we demonstrate a fully CMOS compatible co-integration of Gate-All-Around (GAA) stacked-NanoSheet (NS) transistors with HfO 2 -based OxRAM cells for high-density embedded memory.
Gharbi, A. +14 more
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The Analysis of SEU in Nanowire FETs and Nanosheet FETs
The effects of the single-event upset (SEU) generated by radiation on nanowire field-effect transistors (NW-FETs) and nanosheet (NS)-FETs were analyzed according to the incident angle and location of radiation, by using three-dimensional technology ...
Yunjae Kim, Myounggon Kang
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Influence of the RuO2 Nanosheet Content in RuO2 Nanosheet-Pt/C Composite Toward Improved Performance of Oxygen Reduction Electrocatalysts [PDF]
A series of composite electrocatalysts composed of RuO2 nanosheets and carbon supported Pt (RuO(2)ns-Pt/C) has been synthesized by mixing different amounts of commercial 50 wt% Pt/C with RuO(2)ns derived from exfoliation of layered K0.2RuO2.1 center dot ...
Sugimoto, Wataru +2 more
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The electrical behavior of vertically-stacked nanosheet (NS) gate- all-around MOSFET (GAAFET) having slanted NS channel and source/drain resulted from the etch profile in reactive ion etching processes was investigated through TCAD device simulation.
Park, Byung-Gook +2 more
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Characteristic variability induced by process variation effect (PVE) is one of technological challenges in semiconductor industry. In this work, we computationally study electrical characteristic and power fluctuations induced by six factors of PVE of ...
Sekhar Reddy Kola, Yiming Li
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Fabrication of polyvinyl alcohol-graphene nanosheet nanocomposite loading of omega-3 fatty acids for ceramic engineering [PDF]
Objective(s): Many people all around the world encounter major problems due to nervous system injuries. Among the various methods of treating, neural tissue engineering has attracted a lot of attention from nerve science researchers.Materials and Methods:
Pegah Bitaraf +2 more
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Electrode Properties of Nanosheet-Derived MnO2 for Electrochemical Capacitors
Layer-structured MnO2 electrodes were synthesized by using a nanosheet process and its electrode properties for electrochemical capacitors were investigated in aqueous solutions. Prepared MnO2 nanosheet had a plate like morphology, 3 µm in width and 3 nm
Hwamyung Jang +2 more
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