Results 51 to 60 of about 271,965 (237)

Nanosheet-Engineered NH₂‑MIL-125 with Highly Active Facets for Enhanced Solar CO₂ Reduction

, 2022
Rational engineering of metal–organic frameworks (MOFs) with maximum exposed highly active facets for photocatalytic CO2 reduction is desirable yet remains greatly challenging.
Mei Yang (51996), Yang Wang (5921), Zong-Zheng He (13123616), Wei-Yin Sun (635626), Fan Guo (65416), Rui-Xia Li (760639)   +5 more
core   +1 more source

Microfluidic Architecting of Patchy MXene Core‐Shell Particles for Ultralow‐Loading Photothermal Shape‐Memory Actuation

Advanced Functional Materials, EarlyView.
Spatially distributing Ti3C2Tx nanosheets into core‐shell architecture, rather than as directly dispersed flakes, mitigates aggregation and enhances photon harvesting. When the Ti3C2Tx core‐shell particles are incorporated into a shape‐memory polymer matrix at an ultralow loading of 0.0024 wt%, the improved photothermal conversion translates into ...
May Maung Zaw, Maxim M. Trubyanov, Qian Wang, Siyu Chen, Hongyi Chen, Keyu Chen, Hongbin Sun, Muthu Vignesh Vellayappan, Xiaoying Qi, Sharon Mui Ling Nai, Kostya S. Novoselov, David W. Rosen, Daria V. Andreeva   +12 more
wiley   +1 more source

Stacked SiGe nanosheets p-FET for Sub-3 nm logic applications

Scientific Reports, 2023
The fabrication of vertically stacked SiGe nanosheet (NS) field-effect transistors (FETs) was demonstrated in this study. The key process technologies involved in this device fabrication are low pressure chemical vapor deposition SiGe/Si multilayer ...
Chun-Lin Chu, Shu-Han Hsu, Wei-Yuan Chang, Guang-Li Luo, Szu-Hung Chen   +4 more
doaj   +1 more source

Phase Engineering of Atomically Precise Nanoclusters (APNCs) of Gold and Beyond

Advanced Materials, EarlyView.
Engineering the structural phase of materials is of paramount importance for both fundamental research and practical applications. In this Review, we summarize the recent progress in controlling the phases of atomically precise nanoclusters (APNCs) of gold, silver and copper, as well as bimetallic systems. The phase‐enabled material properties of APNCs
Yitong Wang, Avirup Sardar, Weijie Ji, Zhongyu Liu, Rongchao Jin   +4 more
wiley   +1 more source

Global Stress Analysis in Fin-Patterned Si/SiGe Nanosheets Stack and Its Impact on GAA-NS Transistors for Next-Generation CMOS Technology

IEEE Journal of the Electron Devices Society
Si/SiGe nanosheet (NS)-based CMOS technology is emerging as a leading candidate for sub-3 nm technology nodes owing to its excellent electrostatic control and scalability.
Amit Kumar Singh Chauhan, Imtiyaz Ahmad Khan, Kunal, Harsh Raju, Sanjeev Kumar Manhas   +4 more
doaj   +1 more source

Hierarchical ZnO Nanosheet-Nanorod Architectures for Fabrication of Poly(3-hexylthiophene)/ZnO Hybrid NO₂ Sensor

, 2016
A facile one-step solution method has been developed here to fabricate hierarchical ZnO nanosheet–nanorod architectures for compositing with poly­(3-hexylthiophene) (P3HT) for fabricating a hybrid NO2 sensor.
Sridhar Komarneni (1648807), Jianlong Xu (841260), Haoyuan Chen (1311033), Xian Li (201841), Dan Xie (41844), Lan Xiang (463355), Yi Xia (294184), Jing Wang (1228470)   +7 more
core   +1 more source

Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities

Advanced Materials, EarlyView.
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen, Zhanxi Fan, Jingjie Ge, Qiyuan He, Zhuangchai Lai, Jiawei Liu, Chaoliang Tan, Hua Zhang   +7 more
wiley   +1 more source

FS-iTFET: advancing tunnel FET technology with Schottky-inductive source and GAA design

Discover Nano
In this paper, we introduce a novel Forkshape nanosheet Inductive Tunnel Field-Effect Transistor (FS-iTFET) featuring a Gate-All-Around structure and a full-line tunneling heterojunction channel.
Jyi-Tsong Lin, Wei-Heng Tai
doaj   +1 more source

Large‐Scale Ultrathin Channel Nanosheet‐Stacked CFET Based on CVD 1L MoS2/WSe2

Advanced Electronic Materials, 2023
Nanosheet (NS) vertical‐stacked complementary field‐effect transistors (CFETs), where the NS n‐FET and NS p‐FET are vertically stacked and controlled using a common gate, would result in maximum device footprint reduction.
Menggan Liu, Jiebin Niu, Guanhua Yang, Kaifei Chen, Wendong Lu, Fuxi Liao, Congyan Lu, Nianduan Lu, Ling Li   +8 more
doaj   +1 more source

Phase‐Engineered MoS2 Quantum Monolayer Catalysts

Advanced Materials, EarlyView.
A new type of catalyst model—phase‐engineered MoS2 quantum‐monolayer catalyst (∼0.8 nm thick, < 6 nm in the lateral size; switchable freely among metallic 1T, semiconducting 2H, and a hybrid phase of metallic‐semiconducting 1T‐2H)—is reported. It can efficiently and stably drive photochemical H2, syngas and ammonia synthesis as a catalyst or co ...
Ruijie Yang, Yingying Fan, Lillian Pernitsky, Mojtaba Ebrahimian Mashhadi, Ningxin Chen, Md. Mehadi Hassan, Zheng Li, Heng Zhao, Liang Mei, Zhiyuan Zeng, Zhangxing Chen, Jinguang Hu, Qingye Lu   +12 more
wiley   +1 more source