Results 221 to 230 of about 85,934 (320)

Additive Manufacture of Diamond:Titanium Hybrid Quantum Sensors

Advanced Materials Interfaces, EarlyView.
ABSTRACT Additive manufacture represents one of the most advanced techniques for the creation of complex parts for applications as diverse as aerospace and implant surgery. However, a challenge with bespoke manufacture of metal parts is the incorporation of sensor elements in a fashion compatible with the 3D printing process.
Daniel Stavrevski, Marsilea A. Booth, David A. Broadway, Islay O. Robertson, Nour Mani, Joshua Zarins, Peter C. Sherrell, Amanda N. Abraham, Qiang Sun, Takeshi Ohshima, Brant C. Gibson, Kate Fox, Andrew D. Greentree   +12 more
wiley   +1 more source

Enhanced Drive Current in 10 nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe Channel. [PDF]

Micromachines (Basel)
Yugender P, Dhar RS, Nanda S, Kumar K, Sakthivel P, Thirumurugan A.   +5 more
europepmc   +1 more source

Bioelectrical Interfaces Beyond Excitable Cells: Cancer, Aging, and Gene Expression Modulation

Advanced Materials Interfaces, EarlyView.
ABSTRACT The investigation of biological conductivity has evolved from its classical foundation based on ionic fluxes underpinning cardiac and neuronal excitability to a multifaceted regulator of cellular physiology. Traditional approaches for probing electrical events in living matter focused largely on action potentials recording.
Paolo Cadinu, Matthew K. Burgess, Catarina Franco Jones, Marzia Iarossi, Manuel Schröter, Nako Nakatsuka, Mustafa B. A. Djamgoz, Gil Gonçalves, Sidahmed Abayzeed, Paola Sanjuán‐Alberte, Paula M. Mendes, Frankie J. Rawson, Malavika Nair, Michael Levin, Rosalia Moreddu   +14 more
wiley   +1 more source

Logic Gates Based on 3D Vertical Junctionless Gate-All-Around Transistors with Reliable Multilevel Contact Engineering. [PDF]

Nano Lett
Kumar A, Müller J, Pelloquin S, Lecestre A, Larrieu G.   +4 more
europepmc   +1 more source

Impact of Oxygen Plasma Pre‐Treatment on Thermal Oxidation and Reliability of SiO2 on 4H‐SiC

Advanced Materials Interfaces, EarlyView.
We investigate how oxygen plasma pre‐treatment affects the thermal oxidation of silicon carbide. While plasma modification increases growth rates by 84%, it reduces dielectric breakdown strength by 18%. Our findings reveal that although plasma improves the interface state density, it introduces structural damage, highlighting a critical trade‐off ...
Chezhiyan Nanjappan, Michael Stöger‐Pollach, Georg Pfusterschmied, Ulrich Schmid   +3 more
wiley   +1 more source

Super High-k Dielectric via Composition-Dependent Hafnium Zirconium Oxide Superlattice for Si Nanosheet Gate-All-Around Field-Effect Transistors with NH₃ Plasma-Optimized Interfaces. [PDF]

Materials (Basel)
Yao YJ, Fu YM, Chen YH, Wei CY, Huang KT, Luo GL, Hou FJ, Lai YS, Wu YC.   +8 more
europepmc   +1 more source

Light‐Programmable Interfaces: From Molecular Photoswitching to Adaptive Membrane Separations

Advanced Materials Interfaces, EarlyView.
This review advances an interface‐centered framework for light‐responsive membranes, linking molecular photoswitches (azobenzene (AZO), spiropyran (SP), diarylethene (DAE), donor–acceptor Stenhouse adducts (DASA), photoacid) to integration strategies in polymeric, porous, self‐assembled, and mixed‐matrix systems.
Liangliang Zhang, Senlin Gu, Jianyang Zhao, Xiaojuan Hao, Lu Hua Li, Jihua Li, Lingxue Kong   +6 more
wiley   +1 more source

Compact Modeling of Advanced Gate-All-Around Nanosheet FETs Using Artificial Neural Network. [PDF]

Micromachines (Basel)
Zhao Y, Xu Z, Tang H, Zhao Y, Tang P, Ding R, Zhu X, Zhang DW, Yu S.   +8 more
europepmc   +1 more source

Mass Spectrometric Investigation of the Influence of Water Vapour and Oxygen on Gas‐Phase Reactions of Aluminium Acetylacetonate

Advanced Materials Interfaces, EarlyView.
The gas‐phase decomposition of Al(acac)3 is investigated under inert, oxygen, and water‐containing conditions. Water is found to promote selective ligand removal and suppress hydrocarbon formation, while oxygen induces faster, less selective decomposition pathways.
Ilyas Adaköy, Sebastian Grimm, Patrick Hemberger, Nina Gaiser, Thomas Bierkandt, Charlotte Rudolph, Christoph Horn, Niklas Tomasik, Burak Atakan   +8 more
wiley   +1 more source

Correction: Switching performance assessment of gate-all-around InAs-Si vertical TFET with triple metal gate, a simulation study. [PDF]

Discov Nano
Madadi D, Mohammadi S.
europepmc   +1 more source