Results 201 to 210 of about 81,608 (254)

Modeling and analysis of gate-all-around silicon nanowire FET

Microelectronics Reliability, 2014
Abstract In this paper, we report the TCAD study on gate-all-around (GAA) silicon nanowire (SiNW) FET. The device carrier transport physics, self-heating effect and process induced stress effect are discussed. With a comparison study between GAA SiNW FET and FinFET, the advantages of GAA SiNW FET on gate controllability and short channel effect ...
Xiangchen Chen, Cher Ming Tan
openaire   +1 more source

Research of Gate-All-Around Field-Effect Transistors

Science and Technology of Engineering, Chemistry and Environmental Protection
This report provides an overview of GAA FETs also known as Gate-All-Around FETs, focusing on their introduction and limitations, based on a comprehensive review of current literature and online resources. GAA FETs represent an evolution of FinFET technology, which itself was developed from traditional MOSFET designs. Each iteration has aimed to improve
openaire   +1 more source

Localized thermal effects in Gate-all-around devices

2023 IEEE International Reliability Physics Symposium (IRPS), 2023
Colin Landon, Lei Jiang, Daniel Pantuso, Inanc Meric, Kam Komeyli, Jeffrey Hicks, Daniel Schroeder   +6 more
openaire   +1 more source

From Gate-all-Around to Nanowire MOSFETs

2007 International Semiconductor Conference, 2007
The classical MOSFET is reaching its scaling limits and "end-of-roadmap" alternative devices are being investigated. Amongst the different types of SOI devices proposed, one clearly stands out: the multigate field-effect transistor (multigate FET). This device has a general "wire-like" shape.
openaire   +1 more source

Taming the Distribution of Light in Gate-All-Around Semiconductor Devices

Nano Letters
Optical metrology is ubiquitous, but image-based methods cannot resolve features of dimensions much smaller than the wavelength. However, it has recently been demonstrated that light can be nanofocused into subwavelength semiconducting lines by setting the incident polarization along the direction of these lines.
Janusz Bogdanowicz, Thomas Nuytten, Andrzej Gawlik, Stefanie Sergeant, Yusuke Oniki, Pallavi Puttarame Gowda, Hans Mertens, Anne-Laure Charley   +7 more
openaire   +2 more sources

Gate-All-Around Technology is Coming.

Proceedings of the 2023 International Symposium on Physical Design, 2023
openaire   +1 more source

Fabrication of the SiC Gate-All-Around JFET

IEEE Transactions on Electron Devices, 2023
Masaya Mochizuki, Masayuki Yamamoto, Hitoshi Umezawa, Yasunori Tanaka   +3 more
openaire   +1 more source

Electrically Reconfigurable Organic Logic Gates: A Promising Perspective on a Dual‐Gate Antiambipolar Transistor

Advanced Materials, 2022
Yutaka Wakayama, Ryoma Hayakawa, Kaname Kanai   +2 more
exaly  

Gate-all-around device

2023
TSAI CHUNG-EN, CHUNG CHIA-CHE, LIU CHEE-WEE, LU FANG-LIANG, HUANG YU-SHIANG, YEH HUNG-YU, TU CHIEN-TE, LIU YI-CHUN   +7 more
openaire   +1 more source

The next generation of gate-all-around transistors

Nature Electronics, 2023
openaire   +1 more source