Results 181 to 190 of about 81,608 (254)

Palatable‐Food–Driven Top‐Down Circuit Inhibits PVNCRF Activity to Mitigate Stress Via Peri‐PVNCRFR1 Neurons

Advanced Science, EarlyView.
Palatable food alleviates stress and prevents anxiety. This study uncovers a dedicated neural pathway: dopamine release in the PFC activates D1R neurons, whose projections to the peri‐PVN engage a population of anxiolytic CRFR1 neurons. These neurons then inhibit stress‐induced hyperactivity of PVNCRF neurons, providing a circuit‐level explanation for ...
Yuchuan Hong, Shirui Jun, Tianjiao Deng, Gaojie Shao, Dan Liu, Yi Sun, Yan Chen, Qian Xiao, Jie Shao, Sheng Wang, Tianwen Huang, Fan Yang, Jie Tu   +12 more
wiley   +1 more source

Making Sweat Measurable: Induction, Sampling, and Refreshment in Wearable Biofluid Sensing

Advanced Science, EarlyView.
Wearable sweat sensing relies not only on chemical detection but also on controlled biofluid management. This Review integrates sweat physiology, induction strategies, and microfluidic sampling architectures, demonstrating how flux, transport, and refreshment shape measurement reliability.
Soyoung Shin, Wei Gao
wiley   +1 more source

Inhibitory Decay and Supercritical Brain Dynamics During Sleep Deprivation

Advanced Science, EarlyView.
Sleep deprivation progressively shifts human brain dynamics from near‐critical toward supercritical states, as revealed by neuronal avalanche analysis of resting‐state fMRI. These changes track subjective sleep pressure rather than vigilance lapses and show marked network heterogeneity. A circuit model suggests that reduced inhibitory efficacy provides
Dai Zhang, Liqin Zhou, Rong Wang, Yuehua Han, Zhentao Zuo, Yanghua Tian, Ke Zhou   +6 more
wiley   +1 more source

Combining Radiation‐Treated Tumor Vaccines With Mn‐MOF Nanoadjuvants to Amplify Radiation Induced Anti‐Tumor Immune Responses

Advanced Science, EarlyView.
Radiotherapy‐treated tumor membranes are integrated with Mn‐MOF nanoadjuvants to generate Mn@RM, a lymph node‐draining nanovaccine that delivers radiotherapy‐remodeled antigenic components. Mn@RM enhances dendritic cell activation, amplifies T cell‐mediated antitumor immunity, and synergizes with radiotherapy and PD‐1 blockade for combination cancer ...
Yiyu Wang, Qiqi Qi, Dezhong Li, Jingshi Tang, Weifeng Wang, Zushun Xu, Qi Xu, Fangfang Du, Qianyuan He   +8 more
wiley   +1 more source

Photonic‐Enabled Energy‐Efficient Transparent Neuromorphic Computing Devices: A Review

Advanced Science, EarlyView.
Transparent photonic neuromorphic computing devices merge optics and brain‐inspired computing to overcome von Neumann bottlenecks with ultrafast, low‐energy processing. By exploiting transparent oxides, 2D materials, phase‐change materials, and hybrid heterostructures, these platforms enable photonic synapses, memory, and logic for see‐through edge ...
Shuvaraj Ghosh, Ki‐bum Lee, Junghyeon Lee, Seunghee Cho, Malkeshkumar Patel, Hangfei Li, Yu Wen, Ye Zhou, Joondong Kim   +8 more
wiley   +1 more source

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TDDB Reliability in Gate-All-Around Nanosheet

2021 IEEE International Reliability Physics Symposium (IRPS), 2021
Time dependent dielectric breakdown (TDDB) reliability is studied on interfacial layer (IL)/high-K gate stack of Gate-All-Around Nanosheet (GAA-NS) N- and P-type Field Effect Transistors (FETs) with volume-less multiple threshold voltage (multi-Vt) integration scheme enabled by the dual dipoles (n-dipole and p-dipole).
Huimei Zhou, Miaomiao Wang 0006, Ruqiang Bao, Tian Shen, Ernest Y. Wu, Richard G. Southwick, Jingyun Zhang, Veeraraghavan S. Basker, Dechao Guo   +8 more
openaire   +1 more source

Introduction of Gate-All-Around FET (GAAFET)

Applied and Computational Engineering, 2023
The Gate-All-Around Field-Effect Transistor (GAAFET) represents a significant advancement in integrated circuits technology, offering enhanced functionality compared to its predecessor, the Fin Field-Effect Transistor (FinFET). This paper provides a comprehensive overview of GAAEFT, its historical developments, current state, and recent developments ...
Chengzhen Xie, Yuxin Zhang, Kexin Zhang, Leon Zi-Run Guo   +3 more
openaire   +1 more source

Radiation effects in gate-all-around structures

1991 IEEE International SOI Conference Proceedings, 2002
Gate-all-around (GAA) devices have been characterized by current vs. voltage techniques after being exposed to 10-keV X-rays under a variety of bias conditions. Parameters such as mobility, oxide trapped charge, interface state density, and leakage currents were monitored. The SIMOX (separation by implanted oxygen) GAA device, which has no buried-oxide
R.K. Lawrence, J.P. Colinge, H.L. Hughes
openaire   +1 more source

Ge gate-all-around FETs on Si

2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2014
High performance Ge inversion (INV) and junctionless (JL) gate-all-around (GAA) FETs are demonstrated on epi-Ge layer on SOI. The anisotropic etching is used to remove the defect near the Ge/Si interface and to form gate-all-around structure. The INV and JL pGAAFETs have I on of 235 µA/µm and 270 µA/µm at V GS − V T = −2 V and V DS = −1 V ...
C. W. Liu, null I-Hsieh Wong, null Yen-Ting Chen, null Wen-Hsien Tu, null Shih-Hsien Huang, null Shu-Han Hsu   +5 more
openaire   +1 more source

Germanium Gate-All-Around pFETs on SOI

ECS Transactions, 2013
The triangular Ge GAA pFET was fabricated and simulated. The hole concentration was obtained from spreading resistance profiling (SRP) and used in the simulation. Device with fin width (Wfin) of 52nm and Lg of 183nm has Ion/Ioff = 105, SS= 130mV/dec, and Ion=235 μA/um at Vd= -1V.
Hung-Chih Chang, S.-H Hsu, C.-L Chu, Y.-T Chen, W.-H Tu, P.-J Sung, G.-Li Luo, Y. –C. Yin Yin, C. W. Liu   +8 more
openaire   +1 more source