Results 181 to 190 of about 85,934 (320)

Ultrafast Vertical Organic Electrochemical Transistors With Ion‐Permeable Conductive Polymer Top Electrodes

Advanced Materials, EarlyView.
Vertical organic electrochemical transistors (vOECTs) are limited in speed by ion‐impermeable metal electrodes that slow ion injection. Using ion‐permeable PBFDO top electrodes allows direct vertical ion injection into BBL channels, achieving high current densities (>400 A cm−2), large on/off ratios (>106), and ultrafast switching in 28 µs. This sets a
Han‐Yan Wu, Yingxue An, Luigi Fabiano, Qifan Li, Qingqing Wang, Feng Zhang, Wenlong Jin, Miao Xiong, Junpeng Ji, Ugo Bruno, Grzegorz Greczynski, Grazia Maria Lucia Messina, Xianjie Liu, Chi‐Yuan Yang, Simone Fabiano   +14 more
wiley   +1 more source

Optimization of Gate-All-Around Device to Achieve High Performance and Low Power with Low Substrate Leakage. [PDF]

Nanomaterials (Basel), 2022
Yoo C, Chang J, Park S, Kim H, Jeon J.
europepmc   +1 more source

Frequency-dependent electric dc power consumption model including quantum-conversion efficiencies in ultrafast all-optical semiconductor gates around 160 Gb/s

, 2007
Jun Sakaguchi, Ferran Salleras, Kohsuke Nishimura, Yoshiyasu Ueno   +3 more
openalex   +1 more source

2D Nanomaterials Toward Function‐Ready Superlubricity in Advanced Microsystems

Advanced Materials, EarlyView.
A unified framework links structural and transformation superlubricity with microsystem functions and deployment requirements. Mechanisms, device architectures, integration strategies, AI‐guided discovery, and benchmarking protocols are connected to define function‐ready superlubricity in advanced microsystems.
Yushan Geng, Jun Yang, Yong Yang
wiley   +1 more source

Large-scale gate-all-around MoS₂ transistor array through lossless monolithic 3D integration. [PDF]

Natl Sci Rev
Chen C, Chen K, Zhao H, Lu S, Shang J, Jiang H, Gao L, He X, Jiang S, Chen Z, Zhang Z, Zhang X, Zhang Y.   +12 more
europepmc   +1 more source

Effects of Random Nanosized TiN Grain on Characteristic of Gate-All-Around FinFETs with Ferroelectric HZO Layer. [PDF]

Nanoscale Res Lett, 2022
Li Y, Chuang MH, Tsai YC.
europepmc   +1 more source

Investigation of Sub-10-nm Diameter, Gate-All-Around Nanowire Field-Effect Transistors for Electrostatic Discharge Applications

, 2010
Weiguang Liu, Juin J. Liou, Yu Jiang, Navab Singh, G. Q. Lo, Jayong Chung, Y. H. Jeong   +6 more
openalex   +2 more sources

Figures of merit that characterize silicon gate-all-around nanowire FETs affected by line edge roughness variability

, 2023
Antonio J. García‐Loureiro, Natalia Seoane, Julián G. Fernández, Enrique Comesaña, Juan C. Pichel   +4 more
openalex   +2 more sources

Stable Protein‐Based G‐Quadruplex‐Derived Supramolecular Bioinks as Tunable ECM‐Mimetic Constructs Assembled by Combining Non‐Covalent and Covalent Strategies

Advanced Materials, EarlyView.
Harnessing the synergistic interplay of supramolecular self‐assembly, under macromolecular crowding conditions, and enzymatic‐mediated covalent crosslinking toward a stable protein‐based G‐quadruplex‐derived supramolecular bioink. This bioinspired strategy enables the biofabrication of complex and tunable ECM‐mimetic constructs, providing a platform ...
Vera Sousa, Rita Sobreiro‐Almeida, Bart W. L. van den Bersselaar, E. W. Meijer, Ghislaine Vantomme, João Borges, João F. Mano   +6 more
wiley   +1 more source

Wafer-scale uniform epitaxy of transferable 2D single crystals for gate-all-around nanosheet field effect transistors. [PDF]

Nat Commun
Xue C, Tan C, Gao X, Tang J, Sun W, Yin Y, Wang M, Gao X, An H, Fu B, Liu W, Wang Y, Li Y, Ding F, Peng H.   +14 more
europepmc   +1 more source