Results 161 to 170 of about 12,503,659 (299)

Parallel Electrical Integration of Photo Bio Electrochemical Systems (photo‐BESs): Performance Gains and Load Dependency

Advanced Materials Technologies, EarlyView.
Parallel wiring of bioelectrochemical devices with conventional generators unexpectedly boosts output. A biophotovoltaic paired with a solar cell delivers up to 50% more power at low loads than their separate contributions; a plant microbial fuel cell shows similar current gains.
Valeria Marsaglia, Paolo Bombelli, Ingrid Paoletti, Ioannis A. Ieropoulos, Christopher J. Howe   +4 more
wiley   +1 more source

Design and performance analysis of a vertically stacked gate-all-around nanosheet FET with embedded nanocavity for biosensing applications. [PDF]

Sci Rep
Prasanna RL, Karumuri SR, Sreenivasulu VB, Kondaveeti GS.   +3 more
europepmc   +1 more source

Optimization of Gate-All-Around Device to Achieve High Performance and Low Power with Low Substrate Leakage. [PDF]

Nanomaterials (Basel), 2022
Yoo C, Chang J, Park S, Kim H, Jeon J.
europepmc   +1 more source

Light Switchable Ionic Conductivity of Arylazopyrazole Modified Polysiloxanes

Advanced Materials Technologies, EarlyView.
We present a polysiloxane functionalized with a novel arylazopyrazole dye that undergoes reversible photoisomerization. Upon lithium bis(trifluoromethanesulfonyl)imide addition and UV irradiation, the polymer exhibits a shift in tan(d) toward higher frequencies and enhanced ionic conductivity.
Malte S. Beccard, Thulasinath Raman Venkatesan, Michael Bauer, Valentin Razvan Lupu, Philipp Scheidegger, Francesco Taddei, Frank A. Nüesch, Dorina M. Opris   +7 more
wiley   +1 more source

Large-scale gate-all-around MoS₂ transistor array through lossless monolithic 3D integration. [PDF]

Natl Sci Rev
Chen C, Chen K, Zhao H, Lu S, Shang J, Jiang H, Gao L, He X, Jiang S, Chen Z, Zhang Z, Zhang X, Zhang Y.   +12 more
europepmc   +1 more source

Effects of Random Nanosized TiN Grain on Characteristic of Gate-All-Around FinFETs with Ferroelectric HZO Layer. [PDF]

Nanoscale Res Lett, 2022
Li Y, Chuang MH, Tsai YC.
europepmc   +1 more source

A Gate-All-Around Floating-Gate Memory Device with Triangular-Shaped Poly-Si Nanowire Channels

, 2013
[[abstract]]A novel gate-all-around (GAA) poly-Si floating-gate (FG) memory device with triangular nanowire (NW) channels was fabricated and characterized in this work.
蔡宗叡;TSAI,JUNG-RUEY*;李克慧Lee, Ko-Hui Lee;林鴻志Lin, Horng-Chih;黃調元;Huang, Tiao-Yuan, 蔡宗叡(TSAI, JUNG-RUEY)*、李克慧(Lee, Ko-Hui Lee)、林鴻志(Lin, Horng-Chih)、黃調元(Huang, Tiao-Yuan), 蔡宗叡;TSAI, JUNG-RUEY;李克慧;Lee, Ko-Hui Lee;林鴻志;Lin, Horng-Chih;黃調元;Huang, Tiao-Yuan   +2 more
core  

Transducers Across Scales and Frequencies: A System‐Level Framework for Multiphysics Integration and Co‐Design

Advanced Materials Technologies, EarlyView.
Transducers convert physical signals into electrical and optical representations, yet each mechanism is bounded by intrinsic trade‐offs across bandwidth, sensitivity, speed, and energy. This review maps transduction mechanisms across physical scale and frequency, showing how heterogeneous integration and multiphysics co‐design transform isolated ...
Aolei Xu, Mengyao Xiao, Zhouli Sui, Yinpeng Wang, Daoye Zheng, Yuxin Liu, Luwei Wang, Huajun Liu, Chengkuo Lee   +8 more
wiley   +1 more source

Wafer-scale uniform epitaxy of transferable 2D single crystals for gate-all-around nanosheet field effect transistors. [PDF]

Nat Commun
Xue C, Tan C, Gao X, Tang J, Sun W, Yin Y, Wang M, Gao X, An H, Fu B, Liu W, Wang Y, Li Y, Ding F, Peng H.   +14 more
europepmc   +1 more source

Source/Drain Trimming Process to Improve Gate-All-Around Nanosheet Transistors Switching Performance and Enable More Stacks of Nanosheets. [PDF]

Micromachines (Basel), 2022
Chen K, Yang J, Liu T, Wang D, Xu M, Wu C, Wang C, Xu S, Zhang DW, Liu W.   +9 more
europepmc   +1 more source