Results 161 to 170 of about 18,442,244 (245)

Large-scale gate-all-around MoS<sub>2</sub> transistor array through lossless monolithic 3D integration. [PDF]

open access: yesNatl Sci Rev
Chen C   +12 more
europepmc   +1 more source

Liquid Metal Resistive Sensing Architectures for Measuring Diaphragm Strain Responses on Obstructed Surfaces

open access: yesAdvanced Materials Technologies, EarlyView.
A liquid metal‐based strain‐sensing architecture to measure the deformation of a circular diaphragm against obstructed surfaces is formulated using finite element modeling and confocal imaging to establish the mechanical framework and is utilized to control diaphragm‐induced confinement on a bead array, as validated by biomolecular loading level ...
Abdullah‐Bin Siddique   +4 more
wiley   +1 more source

Microscale 3D‐Printed Digital Strain Switches for Embedded Mechanical Computation

open access: yesAdvanced Materials Technologies, EarlyView.
Microscale 3D‐printed strain switches on flexible films convert deformation into native digital signals at geometry defined thresholds. A closed form model predicts switching from 3000 to 15 000 microstrain and is validated across 110 devices. Reliable ohmic closure and strain activated AND, OR, and XOR logic point toward low‐power mechanical ...
Regan Kubicek   +3 more
wiley   +1 more source

Wafer-scale uniform epitaxy of transferable 2D single crystals for gate-all-around nanosheet field effect transistors. [PDF]

open access: yesNat Commun
Xue C   +14 more
europepmc   +1 more source

Extrusion‐Based Bioprinting of Living Bioinks for Tissue and Organ Engineering

open access: yesAdvanced Materials Technologies, EarlyView.
Extrusion‐based bioprinting is presented as the most versatile route for fabricating living, heterogeneous tissues. Its ability to combine diverse bioinks, support matrices, and advanced printhead geometries transforms familiar constraints into powerful biofabrication opportunities.
Eric Silberman   +4 more
wiley   +1 more source

Vertical Gate‐All‐Around SiGeSn/GeSn/SiGeSn Nanowire Transistors for Energy‐Efficient Electronics

open access: yesAdvanced Materials Technologies, EarlyView.
Band‐engineered SiGeSn/GeSn/SiGeSn heterostructures enable complementary vertical nanowire MOSFETs and steep slope tunnel FETs (TFETs) within a unified Group‐IV platform. Leakage suppression and tunnelling‐path engineering demonstrate an effective strategy for future low‐power and energy‐efficient integrated electronics.
Kenta Moto   +9 more
wiley   +1 more source

Dielectric Permittivity Tensor of Muscovite for Next Generation All Van Der Waals Broadband Photonic Components

open access: yesAdvanced Optical Materials, EarlyView.
Low‐index and low‐loss vdW muscovite represents an emerging robust dielectric platform for the creation of next‐generation all‐vdW nanophotonic architectures. Its utilization as a low‐index building‐block in all‐vdW multilayers enables extreme optical contrast when paired with MoS2, paving the way to the realization of few‐layer ultrathin DBS ...
Meri H. Hayrapetyan   +10 more
wiley   +1 more source

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