ABSTRACT The ascent of novel alternative methods in drug development spotlights the dual needs for improved biological fidelity to in vivo, along with reproducibility, especially in regulatory applications. The need for pre‐clinical models of patient‐derived endometriosis lesions motivates the development of a vascularizable, completely synthetic ...
Lauren Pruett +7 more
wiley +1 more source
Study of Selective Dry Etching Effects of 15-Cycle Si0.7Ge0.3/Si Multilayer Structure in Gate-All-Around Transistor Process. [PDF]
Liu E +19 more
europepmc +1 more source
Smooth plasma etching of GeSn nanowires for gate-all-around field effect transistors [PDF]
Étienne Eustache +8 more
openalex +1 more source
A superhydrophobic 3D cell culture platform enables rapid and consistent formation of heterotypic tumor–stroma clusters, and reveals how physiological shear conditions influence metastatic signaling. Mechanical stimulation of cancer‐associated fibroblasts promotes sustained cytokine secretion and survival‐promoting pathways, showing how multicellular ...
Alexandria T. Carter +5 more
wiley +1 more source
A Novel Si Nanosheet Channel Release Process for the Fabrication of Gate-All-Around Transistors and Its Mechanism Investigation. [PDF]
Sun X +12 more
europepmc +1 more source
This review examines how in vitro electrical and mechanical stimulation modulates wound healing in fibroblasts and keratinocytes. Analyzing over 560 experimental data points, we relate stimulation parameters to proliferation and migration outcomes, evaluate platform designs, and highlight the need for multi‐parameter optimization to advance targeted ...
Matthew K. Burgess +3 more
wiley +1 more source
Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect Transistors. [PDF]
Zha C, Luo W, Zhang X, Yan X, Ren X.
europepmc +1 more source
Impact of Light Excitation on Liquid Gate‐All‐Around Silicon Nanowire Field‐Effect Transistor Biosensors with Bowtie Antenna [PDF]
Yongqiang Zhang +7 more
openalex +1 more source
Strain Effectiveness of Gate-all-around Silicon Nanowire n-MOSFET Transistors with Physical Analysis [PDF]
Amit Agarwal +2 more
openalex +1 more source
Strain Engineering of Magnetoresistance and Magnetic Anisotropy in CrSBr
Biaxial compressive strain significantly enhances magnetoresistance and critical saturation fields in thin flakes of the 2D magnet CrSBr, along all three crystallographic axes. First‐principles calculations link these effects to strain‐induced increases in exchange interactions and magnetic anisotropy.
Eudomar Henríquez‐Guerra +19 more
wiley +1 more source

