Lithography‐Compatible Conductive Metal–Organic Frameworks for Scalable Electronics
Conductive MOF thin films are integrated as gate electrodes in semiconductor devices through a photolithography‐compatible patterning strategy. CVD‐grown 2D MOF thin films enable stable operation across bottom‐gate MoS2/MoTe2 field‐effect transistors and top‐gate IGZO arrays, highlighting the potential of conductive MOFs as functional electronic ...
Hyeonwoo Lee +9 more
wiley +1 more source
A machine learning approach to model the impact of line edge roughness on gate-all-around nanowire FETs while reducing the carbon footprint. [PDF]
García-Loureiro A +4 more
europepmc +1 more source
Organic artificial neurons couple mechanical deformation and ionic environments through nonlinear mechano‐electrochemical dynamics. Mechanical strain and electrolyte concentration reshape their nonlinear electrical characteristics, programming excitatory or inhibitory spiking responses that mimic mechanosensitive biological neurons and enable ...
Rassen Boukraa +4 more
wiley +1 more source
Study of Selective Dry Etching Effects of 15-Cycle Si0.7Ge0.3/Si Multilayer Structure in Gate-All-Around Transistor Process. [PDF]
Liu E +19 more
europepmc +1 more source
Topological insulator–metamaterials integrated with electrically driven terahertz quantum cascade lasers enable parity‐dependent harmonic generation. Bulk‐dominated Bi2Se3 favors third‐harmonic emission at 9.96 THz, whereas topological‐surface‐state‐dominated Bi2Se3, Bi2Te3, and (Bi,Sb)2Te3 generate strong second harmonics near 6.5 THz.
Alessandra Di Gaspare +9 more
wiley +1 more source
A Novel Si Nanosheet Channel Release Process for the Fabrication of Gate-All-Around Transistors and Its Mechanism Investigation. [PDF]
Sun X +12 more
europepmc +1 more source
Giant Anisotropic Spin Absorption in Chiral Hybrid Semiconductors
Researchers uncover that chiral hybrid organic–inorganic semiconductors absorb spin differently depending on its polarization direction. This anisotropic spin absorption is primarily driven by the local symmetry breaking within the layered structure.
Cong Yang +12 more
wiley +1 more source
Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect Transistors. [PDF]
Zha C, Luo W, Zhang X, Yan X, Ren X.
europepmc +1 more source
Advances in Bio‐Integrated Edge Computing Systems for Smart and Connected Health
This review explores advances in bio‐integrated edge computing for healthcare, focusing on co‐designing computing, sensing, and energy strategies to overcome integration and power challenges for optimized, decentralized operation. ABSTRACT Recent advances in bio‐integrated healthcare technologies have enabled continuous, high‐resolution monitoring and ...
Gyuwon Kim +4 more
wiley +1 more source
Analog and RF performance optimization for gate all around tunnel FET using broken-gap material. [PDF]
Kumar P +4 more
europepmc +1 more source

