Results 141 to 150 of about 85,934 (320)
Structural and Chemical Engineering of Sub‐Nanochannel Membranes Toward Ion Selectivity
Advanced Functional Materials, EarlyView.This review summarizes recent advances in structural and chemical engineering of sub‐nanochannels for ion selectivity. We first introduce fundamental ion transport mechanisms within sub‐nanochannels, followed by strategies to tune pore size, geometry, and surface functionalities, categorized into charge‐based, ion‐recognition, hydrophilic bonding, and ...
Yuyu Su +5 more
wiley +1 more source
Advanced Functional Materials, EarlyView.Overdoping high temperature superconductors, such as YBa2Cu3O7‐δ (YBCO), is expected to maxime the critical current density by optimising the condensation energy for a given defect landscape, providing new thrust for the development of fusion enabling coated conductors. Here, precise oxygen control is achieved via an electrochemical method allowing for
Alexander Stangl +7 more
wiley +1 more source
Comprehensive Study of Cross-Section Dependent Effective Masses for Silicon Based Gate-All-Around Transistors [PDF]
, 2019 Oves Badami +6 more
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Lg = 50 nm Gate-All-Around In0.53Ga0.47As Nanosheet MOSFETs with Regrown In0.53Ga0.47As Contacts [PDF]
, 2022 In-Geun Lee +18 more
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Hydrogen‐Bond–Driven Ion Retention in Electrolyte‐Gated Synaptic Transistors
Advanced Functional Materials, EarlyView.Anion molecular design governs ion–polymer interactions in electrolyte‐gated synaptic transistors. Asymmetric anions induce hydrogen‐bond interactions that suppress ion back‐diffusion and stabilize doping, enabling enhanced nonvolatile synaptic properties.
Donghwa Lee +5 more
wiley +1 more source
Optimize Gate-All-Around Devices Using Wide Neural Network-Enhanced Bayesian Optimization
IEEE Journal of the Electron Devices SocietyDevice design processes based on manual design experience require numerous experiments and simulations. As transistors continue to shrink, complex physical effects, such as quantum effects intensify, making the design process increasingly costly, whether
Jiaye Shen, Zhiqiang Li, Zhenjie Yao
doaj +1 more source
Temperature characteristics of Gate all around nanowirechannel Si-TFET
, 2023 This paper study the impact of working temperature on the electrical characteristicsof gate all around nanowire channel Si-TFET and examines the effect of working temperatureon threshold voltage, transcondactance (gm), ION/IOFF ratio, drain induced barrier lowering(DIBL), and sub-threshold swing (SS).
openaire +1 more source
Self‐Healing and Stretchable Synaptic Transistor
Advanced Functional Materials, EarlyView.A self‐healing stretchable synaptic transistor (3S‐T) is realized using a p‐PVDF‐HFP‐DBP/PDMS‐MPU‐IU bilayer as gate insulator, where dipole‐dipole interaction enhances polarization to achieve a large memory window. Leveraging its neuronal biomimicry, the synaptic transistor demonstrates electrically compatibility with the biological brain. Furthermore,
Hyongsuk Choo +10 more
wiley +1 more source
Advanced Functional Materials, EarlyView.Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min +13 more
wiley +1 more source