Results 121 to 130 of about 85,934 (320)
A 20-band sp3d5s* spin-orbit-coupled, semi-empirical, atomistic tight-binding model is used with a semi-classical, ballistic, field-effect-transistor (FET) model, to examine the ON-current variations to size variations of [110] oriented PMOS nanowire ...
Gerhard Klimeck +4 more
core +3 more sources
Photon Avalanching Nanoparticles: The Next Generation of Upconverting Nanomaterials?
This Perspective outlines the mechanistic foundations that enable photon‐avalanche (PA) behavior in lanthanide nanomaterials and contrasts them with emerging application spaces and forward‐looking design strategies. By bridging threshold engineering, energy‐transfer dynamics, and materials engineering, we provide a coherent roadmap for advancing the ...
Kimoon Lee +7 more
wiley +1 more source
Position-Dependent Performance in 5 nm Vertically Stacked Lateral Si Nanowires Transistors [PDF]
In this work, we investigated the performance of vertically stacked lateral nanowires transistors (NWTs) considering the effects of series resistance. Also, we consider the vertical positions of the lateral nanowires in the stack and diameter variation ...
Adamu-Lema, F. +3 more
core
Model-free measurement of lateral recess in gate-all-around transistors with micro hard-X-ray fluorescence [PDF]
Janusz Bogdanowicz +9 more
openalex +1 more source
A swelling‐programmed micropatterned hydrogel guides adherent cells through a controlled transition from cell–matrix anchoring to cadherin‐mediated cell–cell compaction, enabling rapid assembly of high‐viability spheroids with defined size and morphology.
Han Gyeol Nam +8 more
wiley +1 more source
Integration of Ferroelectric HfxZr1-xO2 on Vertical III-V Nanowire Gate-All-Around FETs on Silicon
Anton E. O. Persson +3 more
openalex +2 more sources
We investigated Capacitance-Voltage (C-V) characteristics of the Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET by using Self-Consistent method incorporating Quantum Mechanical (QM) effects.
Ahmed, Imtiaz +5 more
core +1 more source
Inducing Ferromagnetism by Structural Engineering in a Strongly Spin‐Orbit Coupled Oxide
ABSTRACT Magnetic materials with strong spin‐orbit coupling (SOC) are essential for the advancement of spin‐orbitronic devices, as they enable efficient spin‐charge conversion, complex magnetic structures, spin‐valley physics, topological phases and other exotic phenomena.
Ji Soo Lim +19 more
wiley +1 more source
Ab-initio quantum transport simulation of self-heating in single-layer 2-D materials
Through advanced quantum mechanical simulations combining electron and phonon transport from first-principles self-heating effects are investigated in n-type transistors with a single-layer MoS2, WS2, and black phosphorus as channel materials.
Bunjaku, Teute +3 more
core +1 more source
Multi‐Scale Interface Engineering of MXenes for Multifunctional Sensory Systems
MXenes, as two‐dimensional transition metal carbides and nitrides, demonstrate remarkable capabilities for multifunctional sensing applications. This review systematically examines multi‐scale interface engineering approaches that enhance sensing performance, enable diverse detection functionalities, and improve system‐level compatibility in MXene ...
Jiaying Liao, Sin‐Yi Pang, Jianhua Hao
wiley +1 more source

