Results 131 to 140 of about 81,608 (254)

Remote Plasma Selective Silicon Etching Enabled Tunable Sub-Fin Process for Improved Parasitic Bottom Channel Control in Gate-All-Around Nanosheet Field-Effect Transistors. [PDF]

Nanomaterials (Basel)
Li J, Gao Y, Zhang DW.
europepmc   +1 more source

Investigation on Ge_0.8Si_0.2-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice. [PDF]

Nanomaterials (Basel), 2021
Xie L, Zhu H, Zhang Y, Ai X, Li J, Wang G, Du A, Kong Z, Wang Q, Lu S, Li C, Li Y, Huang W, Radamson HH.   +13 more
europepmc   +1 more source

Artificial Synaptic Device Based on Self‐Aligned c‐In2O3 TFTs With an Ultrathin MgO Interlayer

Advanced Materials Technologies, EarlyView.
A coplanar synaptic thin‐film transistor based on crystalline In2O3 is demonstrated using a PECVD SiO2 gate insulator and an ultrathin MgO interlayer. The MgO interlayer suppresses excessive carrier density and may facilitate proton‐related interfacial polarization, resulting in stable counterclockwise hysteresis and synaptic behavior.
Samiran Roy, Jewel Kumer Saha, Jin Jang
wiley   +1 more source

Design of a gate-all-around arch-shaped tunnel-field-effect-transistor-based capacitorless DRAM. [PDF]

Discov Nano
Bae SJ, Lee SH, Park J, Kim MS, Hong JW, Koh WS, Yun GS, Jang J, Bae JH, Kang IM.   +9 more
europepmc   +1 more source

In Situ Integrated Titanium Oxide Synaptic Phototransistor Enabling Multimodal Plasticity and Noise‐Robust Selective Attention

Advanced Materials Technologies, EarlyView.
An in situ integrated TiO2/SiOx/Al2O3 synaptic phototransistor couples ultraviolet and electrical stimuli within a scalable, CMOS‐compatible oxide stack. Multimodal plasticity, spike‐timing‐dependent learning, and bee‐inspired associative conditioning are achieved through trap‐mediated temporal dynamics.
Youngbin Yoon, Jaehee Lee, Jeongwook Kwon, Yongki Kim, Myunghun Shin, Jung Wook Lim   +5 more
wiley   +1 more source

Combining quasi-one-dimensional modeling with region-wise structure analysis for rapid technology computer-aided design simulations of gate-all-around MOSFETs. [PDF]

Commun Eng
Lee KW, Kim IK, Jung SW, Jang MS, Hong SM.   +4 more
europepmc   +1 more source

Fabrication of Graphoepitaxial Gate-All-Around Si Circuitry Patterned Nanowire Arrays Using Block Copolymer Assisted Hard Mask Approach. [PDF]

ACS Nano, 2021
Ghoshal T, Senthamaraikannan R, Shaw MT, Lundy R, Selkirk A, Morris MA.   +5 more
europepmc   +1 more source

Unveiling the Hidden Geometry of OECTs: Contact‐Semiconductor Overlap Driven Errors in Volumetric Capacitance

Advanced Materials Technologies, EarlyView.
This work examines how contact–semiconductor overlap influences volumetric capacitance extraction in organic electrochemical transistors as device dimensions shrink. It shows that neglecting overlap leads to systematic, geometry‐driven errors in capacitance values.
Renan Colucci, Marcos Luginieski, Germán D. Gómez Higuita, Gerwin Dijk, Bianca de A. Feitosa, Yaakov Tuchman, Alberto Salleo, Gregório Couto Faria   +7 more
wiley   +1 more source

Simultaneously Estimating Process Variation Effect, Work Function Fluctuation, and Random Dopant Fluctuation of Gate-All-Around Silicon Nanosheet Complementary Field-Effect Transistors. [PDF]

Nanomaterials (Basel)
Kola SR, Li Y.
europepmc   +1 more source

Deep‐Tissue Light Generation via Whispering Gallery Mode Lasing From a Commercial Nylon Fiber for Biomedical Applications

Advanced Materials Technologies, EarlyView.
A dyed nylon fiber is implemented inside the scattering phantom and skin tissue. The deep‐tissue light generation via whispering gallery mode lasing is demonstrated, achieving a depth of >50 times transport mean free path in scattering phantom and 3 mm beneath skin.
Dongqin Ni, Florian Klämpfl, Fernando Lahoz, Michael Schmidt, Martin Hohmann   +4 more
wiley   +1 more source