Results 131 to 140 of about 12,503,659 (299)

Thermal‐Driven Diode Polarity Switching From Competing Helical Superconducting States in WTe2/α‐Fe2O3 Heterostructures

Advanced Materials, EarlyView.
A Nb‐proximitized Josephson junction based on a WTe2/α‐Fe2O3 heterostructure exhibits a robust superconducting diode effect with programmable polarity. The diode direction can be trained by magnetic fields and switched by temperature cycling, revealing tunable finite‐momentum pairing states and competing superconducting states in symmetry‐broken ...
Enze Zhang, Grant Z. X. Yang, Zi‐Ting Sun, Xinhou Chen, Shishun Zhao, Chufan Chen, Chenhui Zhang, Fanrui Hu, K. T. Law, Hyunsoo Yang   +9 more
wiley   +1 more source

Correlated Charge Transport in an Organic Coulomb Glass

Advanced Materials, EarlyView.
ABSTRACT Advances in the development of organic field‐effect transistors (OFETs), electrically gated organic semiconductors (EGOFETs), and organic electrochemical transistors (OECTs) allow for the operation of these devices at very high charge‐carrier densities, where Coulomb interactions between carriers can be expected to become significant.
Magdalena Sophie Dörfler, Heinz Bässler, Harald Oberhofer, Anna Köhler   +3 more
wiley   +1 more source

Tunability of Parasitic Channel in Gate-All-Around Stacked Nanosheets

, 2018
International audienceFor the first time, a comprehensive study going from the integration of 3D stacked nanosheets Gate-All-Around (GAA) MOSFET devices to SPICE modeling is proposed.
G. Audoit, Martinie, S., N. Rambal, T. Ernst, C. Vizioz, S. Martinie, B. Previtali, Vinet, M., A. Jannaud, Lacord, J., Rozeau, O., Hartmann, J.-M., S. Barraud, J. Lacord, N. Bernier, Loup, V., Romano, G., L. Dourthe, Vizioz, C., Audoit, G., J.-M. Hartmann, G. Romano, Chalupa, Z., Previtali, B., Rambal, N., Lapras, V., Barraud, S., O. Rozeau, Bernier, N., Balan, V., V. Lapras, Ernst, T., M. Vinet, Jannaud, A., Z. Chalupa, V. Delaye, Dourthe, L., Casse, M., Delaye, V., V. Loup, M. Casse, V. Balan   +41 more
core   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Vertical Heterojunction Ge0.92Sn0.08/Ge Gate-All-Around Nanowire pMOSFETs

, 2019
International audienceVertical heterojunction Ge 0.92 Sn 0.08 /Ge gate-all-around (GAA) nanowire pMOSFETs fabricated with a top-down approach are reported.
Grap, Thomas, Trellenkamp, Stefan, Buca, Dan, Liu, Mingshan, von den Driesch, Nils, Knoch, Joachim, Hartmann, Jean-Michel, Mertens, Konstantin, Zhao, Qing- Tai, Zhao, Qing-Tai   +9 more
core   +1 more source

Bubble Formation Control: Fabrication of Centimeter‐Sized Tissue‐Like Constructs by Catalase‐Coated Oxygen‐Releasing Hydrogel

Advanced Materials, EarlyView.
Oxygen‐releasing hydrogels are widely used to support cell survival in 3D cultures and to promote wound healing. However, incorporating catalase to convert H2O2 into O2 often generates additional oxygen bubbles, leading to material instability which rarely addressed.
Sukulya Bunuasunthon, Isabel F. Amaral, Ana P. Pêgo, Michiya Matsusaki   +3 more
wiley   +1 more source

A Novel Scheme for Full Bottom Dielectric Isolation in Stacked Si Nanosheet Gate-All-Around Transistors. [PDF]

Micromachines (Basel), 2023
Yang J, Huang Z, Wang D, Liu T, Sun X, Qian L, Pan Z, Xu S, Wang C, Wu C, Xu M, Zhang DW.   +11 more
europepmc   +1 more source

A self-aligned gate-all-around MOS transistor on single-grain silicon

, 2004
A self-aligned gate-all-around metal-oxide-semiconductor (MOS) transistor technology is proposed and demonstrated. The self-aligned structure is realized by first forming two dummy gates self-aligned to each other, and then replacing them with a real ...
Wang, Hongmei, Han, RQ, Chan, MS, Chan, Man Sun, Han, Ruqi, Zhang, Shengdong, Zhang, SD, Wang, HM   +7 more
core   +1 more source

Resistance to Overdoping Allows Over 2000 S cm−1 Conductivity in P(g3BTTT) With Anion‐Exchange Doping

Advanced Materials, EarlyView.
Anion‐exchange doping of conjugated polymers is an effective way to achieve high conductivities. Here, we report over 2000 S cm−1 electrical conductivity for doped P(g3BTTT). In addition, we show that P(g3BTTT) sustains exceptionally high doping levels without any drop in the charge mobility.
Basil Hunger, Maximilian M. Horn, Eva Röck, Diego Rosas Villalva, Lize Bynens, Jochen Vanderspikken, Christina Kousseff, Silène Gobeil, Olivier Bardagot, Nesibe Akmanşen‐Kalayci, Sarah H. Tolbert, Iain McCulloch, Wouter Maes, Demetra Tsokkou, Natalie Banerji   +14 more
wiley   +1 more source

Leaftronics: Bio‐Fractal Scaffolds From Leaf Venation for Low‐Waste Electronics

Advanced Materials, EarlyView.
“Leaftronics” transforms naturally evolved leaf venation into quasi‐fractal scaffolds for sustainable electronics. Polymer‐infiltrated leaf skeletons can be used to fabricate ultra‐smooth, reflow‐ and thin‐film‐compatible decomposable substrates, while making the same lignocellulose networks conducting results in flexible transparent electrodes.
Rakesh Rajendran Nair, Hrisheekesh Thachoth Chandran, Karl Leo, Hans Kleemann   +3 more
wiley   +1 more source