Results 131 to 140 of about 85,934 (320)

Optoelectronic Control of Redox Dynamics in POM Memristors for Noise‐Resilient Speech and Hardware‐Level Motion Recognition

Advanced Functional Materials, EarlyView.
Optoelectronic control of redox‐active polyoxometalate clusters in polymer matrices yields hybrid memristors with switchable volatile and non‐volatile modes, enabling reservoir‐type in‐sensor optical preprocessing and stable multilevel synapses for multimodal neuromorphic computing, including noise‐tolerant audiovisual keyword recognition and hardware ...
Xiangyu Ma, Ziyu Lv, Guohua Zhang, Zhongyue Xu, Yongbiao Zhai, Haiming Huang, Qiyan Zhang, Xiaojin Zhao, Yan Wang, Ye Zhou, Ziyu Xiong, Guanglong Ding, Wentao Xu, Su‐Ting Han   +13 more
wiley   +1 more source

Performance and sensitivity analysis of dielectric engineered GAA-JL MOSFET for chloroform gas detection

Micro and Nano Systems Letters
This paper demonstrates a simulation-based analysis of highly sensitive gas sensor design to detect the Chloroform gas based on an advanced Gate All Around Junctionless MOSFET (GAA-JLMOS).
Abhinav Gupta, Akanksha Gupta, Suman Lata Tripathi, Manish Kumar Rai   +3 more
doaj   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Scaling Challenges of Nanosheet Field-Effect Transistors Into Sub-2 nm Nodes

IEEE Journal of the Electron Devices Society
The scaling of nanosheet (NS) field effect transistors (FETs) from the 12 nm gate length to the ultimate gate length of 10 nm for sub-2 nm nodes brings additional technological challenges.
Murad G. K. Alabdullah, M. A. Elmessary, D. Nagy, N. Seoane, A. J. Garcia-Loureiro, K. Kalna   +5 more
doaj   +1 more source

Variability-Aware Simulations of 5 nm Vertically Stacked Lateral Si Nanowires Transistors [PDF]

, 2017
In this work, we present a simulation study of vertically stacked lateral nanowires transistors (NWTs) considering various sources of statistical variability. Our simulation approach is based on various simulations techniques to capture the complexity in
Adamu-Lema, F., Al-Ameri, Talib, Asenov, A., Georgiev, V.P.   +3 more
core  

Sensitized Triplet Exciton Generation in Nanostructured Polymer Scintillators: Toward Improved γ/Neutron Discrimination

Advanced Functional Materials, EarlyView.
Rapid γ/neutron discrimination through PSD is achieved in liquid droplet containing nanostructured polymeric scintillator where a TTA‐active dye is dissolved. The inclusion of a properly selected and dosed sensitizer metalated porphyrin enhances discrimination sensitivity and speed by doubling the density of annihilating triplets and increasing the ...
Luca Pollice, Xueqian Hu, Letizia G. Tedoldi, Andrea Erroi, Davide Rigamonti, Marco Tardocchi, Davide Bortot, Andrea Pola, Christoph Weder, Angelo Monguzzi   +9 more
wiley   +1 more source

Investigation of Trap Density Effect in Gate-All-Around Field Effect Transistors Using the Finite Element Method [PDF]

, 2023
Maissa Belkhiria, Fatma Aouaini, Shatha A. Aldaghfag, Fraj Echouchene, Hafedh Belmabrouk   +4 more
openalex   +1 more source

Critical Role of Polymer Gate Dielectrics on the Charge Carrier Transport in Perovskite Field‐Effect Transistors

Advanced Functional Materials, EarlyView.
Charge transport in 2D tin perovskite FETs is shown to be governed by dielectric interface behavior. Polar polymer dielectrics induce dipolar disorder that localizes carriers, whereas nonpolar polymers suppress trapping and enable superior charge transport, ensuring stable and reliable transistor operation. ABSTRACT Understanding the role of interfaces
Chongyao Li, Zhitian Ling, Pawel Czulkin, Paul W. M. Blom, Wojciech Pisula, Tomasz Marszalek   +5 more
wiley   +1 more source

Unlocking Photodetection Mode Switching from a Simple Lateral Design

Advanced Functional Materials, EarlyView.
A simple lateral 2D perovskite photodetector capable of switching among transient, continuous, and dual transient/continuous photoresponse modes is achieved by integrating photoconductive effects with capacitive coupling from the SiO2/Si substrate. Such light‐programmable photodetection mode switching enables triple‐channel information transmission and
Zijun (June) Yong, Keng‐Te Lin, Joel van Embden, Taimur Ahmed, Yumeng Du, Dashen Dong, Yiwen Mai, Junlin Lu, Sumeet Walia, Baohua Jia, Tianyi Ma   +10 more
wiley   +1 more source

One Time Programmable Antifuse Memory Based on Bulk Junctionless Transistor [PDF]

One time programmable (OTP) antifuse base memory is demonstrated based on a bulk junctionless gate-all-around (GAA) nanowire transistor technology. The presented memory consists of a single transistor (1T) footprint without any process modification.
Han, Jin-Woo, Meyyappan, M., Moon, Dong-Il   +2 more
core   +1 more source