Results 111 to 120 of about 85,934 (320)
2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics
Advanced Functional Materials, EarlyView.2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit +5 more
wiley +1 more source
Actuating and Sensing Composites of Liquid Crystal Elastomers and Poly(ionic liquid)s
Advanced Functional Materials, EarlyView.Ionic conductive, mechanically tough, flexible, and stretchable filaments of a composite material comprising a liquid crystal elastomer and a poly(ionic liquid) are produced through 3D printing, which exhibit large actuation strain under stimulation and electrical resistance variation in response to deformation or environmental condition changes. Their
Zeping Liu +6 more
wiley +1 more source
Spectrally Tunable Broadband Gate-All-Around InAsP/InP Quantum Discs-in-Nanowire Array Phototransistors with a High Gain-Bandwidth Product [PDF]
, 2023 Hossein Jeddi +5 more
openalex +1 more source
Full 3D Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs
, 2011 The influence of interface roughness scattering (IRS) on the performances of silicon nanowire field-effect transistors (NWFETs) is numerically investigated using a full 3D quantum transport simulator based on the atomistic sp3d5s* tight-binding model ...
Boykin, Timothy B. +4 more
core +1 more source
Advanced Functional Materials, EarlyView.Synthesis and characterization of light‐responsive donor–acceptor Stenhouse adducts (DASA)‐coated chlorhexidine‐loaded silica nanoparticles. Such a controllable drug‐delivery system enables the release of the antimicrobial drug on demand and in consecutive cycles, thereby maintaining the concentration within the therapeutic window.
Michèle Clerc +9 more
wiley +1 more source
Bandstructure and mobility variations in p-type Silicon nanowires under electrostatic gate field
, 2013 The sp3d5s*-spin-orbit-coupled atomistic tight-binding (TB) model is used for the electronic structure calculation of Si nanowires (NWs), self consistently coupled to a 2D Poisson equation, solved in the cross section of the NW.
Baumgartner, Oskar +3 more
core +1 more source
Uncovering the Origin of Efficiency Roll‐Off in TADF OLEDs
Advanced Functional Materials, EarlyView.OLEDs based on thermally activated delayed fluorescent (TADF) materials often suffer from a severe drop in efficiency at high brightness levels. This work presents a technique to uncover the source of this efficiency drop, and quantifies the exciton‐exciton and exciton‐polaron annihilation processes responsible for efficiency losses in our TADF OLEDs ...
Liam G. King +3 more
wiley +1 more source
Potential and Quantum Threshold Voltage Modeling of Gate-All-Around Nanowire MOSFETs
Active and Passive Electronic Components, 2013 An improved physics-based compact model for a symmetrically biased gate-all-around (GAA) silicon nanowire transistor is proposed. Short channel effects and quantum mechanical effects caused by the ultrathin silicon devices are considered in modelling the
M. Karthigai Pandian +2 more
doaj +1 more source