Results 91 to 100 of about 81,608 (254)

Resistance to Overdoping Allows Over 2000 S cm−1 Conductivity in P(g3BTTT) With Anion‐Exchange Doping

Advanced Materials, EarlyView.
Anion‐exchange doping of conjugated polymers is an effective way to achieve high conductivities. Here, we report over 2000 S cm−1 electrical conductivity for doped P(g3BTTT). In addition, we show that P(g3BTTT) sustains exceptionally high doping levels without any drop in the charge mobility.
Basil Hunger, Maximilian M. Horn, Eva Röck, Diego Rosas Villalva, Lize Bynens, Jochen Vanderspikken, Christina Kousseff, Silène Gobeil, Olivier Bardagot, Nesibe Akmanşen‐Kalayci, Sarah H. Tolbert, Iain McCulloch, Wouter Maes, Demetra Tsokkou, Natalie Banerji   +14 more
wiley   +1 more source

Leaftronics: Bio‐Fractal Scaffolds From Leaf Venation for Low‐Waste Electronics

Advanced Materials, EarlyView.
“Leaftronics” transforms naturally evolved leaf venation into quasi‐fractal scaffolds for sustainable electronics. Polymer‐infiltrated leaf skeletons can be used to fabricate ultra‐smooth, reflow‐ and thin‐film‐compatible decomposable substrates, while making the same lignocellulose networks conducting results in flexible transparent electrodes.
Rakesh Rajendran Nair, Hrisheekesh Thachoth Chandran, Karl Leo, Hans Kleemann   +3 more
wiley   +1 more source

Switchable Magnonic Crystals Based on Spin Crossover/CrSBr Heterostructures

Advanced Materials, EarlyView.
Multiscale modeling is employed to investigate the functionality of a light‐controlled, tunable magnonic crystal based on spin‐crossover Fe‐pz molecules integrated with a monolayer of CrSBr. Ab initio simulations confirm that the molecules remain functional on the CrSBr surface, while a semiclassical elastic model demonstrates that light‐induced ...
Andrei Shumilin, Sourav Dey, Denisa Coltuneac, Laurentiu Stoleriu, José J. Baldoví   +4 more
wiley   +1 more source

A Novel Scheme for Full Bottom Dielectric Isolation in Stacked Si Nanosheet Gate-All-Around Transistors. [PDF]

Micromachines (Basel), 2023
Yang J, Huang Z, Wang D, Liu T, Sun X, Qian L, Pan Z, Xu S, Wang C, Wu C, Xu M, Zhang DW.   +11 more
europepmc   +1 more source

Monolithic 3D‐Integrated All‐Solid Ion‐Gated Carbon Nanotube Transistors With Tunable Ionic Conductance for Multi‐Timescale Reservoir Computing

Advanced Materials, EarlyView.
A dual‐timescale reservoir based on monolithically 3D (M3D)‐integrated CNT solid ion‐gated transistors is demonstrated. Tunable ionic dynamics and pulse‐engineered operation enable linear and symmetric synaptic updates. The M3D‐integrated array achieves robust temporal encoding and accurate classification of moving MNIST sequences, highlighting its ...
Haksoon Jung, Hanbin Cho, Yongwoo Lee, Seunghun Baek, Hyeongjun Kim, Yun Goo Ro, Hyunhyub Ko, Joonki Suh, Yong‐Young Noh, Jimin Kwon   +9 more
wiley   +1 more source

Space‐Time Coding Conformal Metasurfaces for Multifrequency Beam Steering and Shaping

Advanced Materials, EarlyView.
Space‐time coding conformal metasurfaces enable dynamic wave control on curved surfaces by combining programmable spatial patterns with temporal modulation. This study shows that a single conformal aperture can independently manipulate multiple frequency components, achieving multifunctional beam shaping and steering, with implications for ...
Filippo Pepe, Lei Zhang, Yi Ning Zheng, Xiao Qing Chen, Ivan Iudice, Giuseppe Castaldi, Marco Di Renzo, Tie Jun Cui, Vincenzo Galdi   +8 more
wiley   +1 more source

MOCVD‐Grown MoS2 Wafers as a Transfer‐Free Platform for Top‐Gate Devices via Dry Interface Engineering

Advanced Materials, EarlyView.
We reveal the electronic origin of hidden interfacial doping in monolayer MoS2 grown by MOCVD, identifying sulfate related and water like species as intrinsic donors. Through dry interface engineering approach, we demonstrate MOCVD‐grown single‐crystal MoS2 wafers as a transfer‐free platform for the reliable evaluation of intrinsic gate stacks and ...
Shuhong Li, Juiteng Chang, Keisuke Atsumi, Kosei Matsumoto, Itsuki Tanaka, Tomonori Nishimura, Kaito Kanahashi, Takahiro Nagata, Jun Nara, Yoshiki Sakuma, Emi Kano, Nobuyuki Ikarashi, Kosuke Nagashio   +12 more
wiley   +1 more source

A machine learning approach to model the impact of line edge roughness on gate-all-around nanowire FETs while reducing the carbon footprint. [PDF]

PLoS One, 2023
García-Loureiro A, Seoane N, Fernández JG, Comesaña E, Pichel JC.   +4 more
europepmc   +1 more source

Resolving Heterogeneity of Targeted Lipid Nanoparticles Through Solution‐Based Biophysical Analyses

Advanced Materials, EarlyView.
AF4‐UV‐DLS‐MALS‐SAXS resolves previously inaccessible targeted lipid nanoparticle (tLNP) subpopulations that differ in size, shape, and composition. Correlation of subpopulation‐resolved biophysical properties with in vivo RNA delivery reveals that targeted placental transfection is associated with distinct tLNP subpopulations rather than ensemble ...
Hannah C. Geisler, Hannah C. Safford, Ajay S. Thatte, Marshall S. Padilla, Elisa Battistini, Hannah M. Yamagata, Violet M. Ullman, Alex Chan, Benjamin E. Nachod, Anushka Agrawal, Maxwell B. Watkins, Jesse B. Hopkins, Andrew Tsourkas, Kushol Gupta, Michael J. Mitchell   +14 more
wiley   +1 more source

Study of Selective Dry Etching Effects of 15-Cycle Si_0.7Ge_0.3/Si Multilayer Structure in Gate-All-Around Transistor Process. [PDF]

Nanomaterials (Basel), 2023
Liu E, Li J, Zhou N, Chen R, Shao H, Gao J, Zhang Q, Kong Z, Lin H, Zhang C, Lai P, Yang C, Liu Y, Wang G, Zhao C, Yang T, Yin H, Li J, Luo J, Wang W.   +19 more
europepmc   +1 more source