Results 101 to 110 of about 12,503,659 (299)

Multidimensional Cellular Micro‐Compartments to Model Invasive Lobular Carcinoma Dormancy

open access: yesAdvanced Healthcare Materials, EarlyView.
Invasive lobular carcinoma (ILC) is an understudied subtype of breast cancer that is susceptible to late recurrences. In this study, micro‐compartmentalization techniques spanning multiple dimensions, including 2D, pseudo‐3D, and 3D, are integrated to uncover the mechanisms underlying ILC dormancy, revealing the central role of p27Kip1.
Xilal Y. Rima   +15 more
wiley   +1 more source

Potential and Quantum Threshold Voltage Modeling of Gate-All-Around Nanowire MOSFETs

open access: yesActive and Passive Electronic Components, 2013
An improved physics-based compact model for a symmetrically biased gate-all-around (GAA) silicon nanowire transistor is proposed. Short channel effects and quantum mechanical effects caused by the ultrathin silicon devices are considered in modelling the
M. Karthigai Pandian   +2 more
doaj   +1 more source

Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFET

open access: yes, 2010
An analytic subthreshold potential model for gate underlap cylindrical gate-all-around (GAA) MOSFETs is presented in this work. The fringing field from the gate to underlap regions is derived by using channel length transformation and conformal mapping ...
Zhang, Lining   +4 more
core   +1 more source

One‐Step Microfluidic Manufactured Fucose‐Decorated Sweetosomes Choose the Time and the Road for Their Intracellular Journey to Cancer Treatment

open access: yesAdvanced Healthcare Materials, EarlyView.
Sweetosomes, a new class of fucose‐decorated liposomes, are developed via a one‐step microfluidic process without surface chemistry. This study elucidates their main caveolae‐mediated entry and distinct endosomal trafficking. These nanostructures demonstrate superior endosomal escape, organelle acidity modulation, and prolonged plasma persistence ...
Mattia Tiboni   +13 more
wiley   +1 more source

Optimal inverter logic gate using 10-nm double gate-all-around (DGAA) transistor with asymmetric channel width

open access: yesAIP Advances, 2016
We investigate the electrical characteristics of a double-gate-all-around (DGAA) transistor with an asymmetric channel width using three-dimensional device simulation.
Myunghwan Ryu   +2 more
doaj   +1 more source

Functional Blood‐Brain Barrier Crossing by Biomimetic M13 Phage Vectors for Targeted Neuronal Delivery

open access: yesAdvanced Healthcare Materials, EarlyView.
This study investigates the M13 bacteriophage as a biomimetic nanovector capable of crossing in vitro models of the blood–brain barrier. By exploiting peculiar transcellular pathways, M13 avoids lysosomal degradation and preserves its structural integrity and functionality.
Silvia Vercellino   +12 more
wiley   +1 more source

Computationally efficient quantum-mechanical technique to calculate direct tunnelling gate leakage current in metal-oxide-semiconductor structures

open access: yes, 2003
We propose a computationally efficient, accurate and numerically stable quantum- mechanical technique to calculate the direct tunneling (DT)gate current in metal-oxide-semiconductor (MOS) structures.
Haque, A, Hakim, MMA
core  

3D‐Printed Piezoionic/Bioelectronic Hydrogel for Electro‐Metabolic Regulation of Osteogenic Differentiation

open access: yesAdvanced Healthcare Materials, EarlyView.
A 3D‐printed piezoionic GPMx hydrogel enables stable electromechanical signal generation under mechanical loading, exhibiting long‐term durability and low fatigue. As a bioactive patch, it restores endogenous bioelectricity to stimulate osteogenesis via Ca2+ influx and mitochondrial activation, while simultaneously enabling label‐free alkaline ...
Sayan Deb Dutta   +3 more
wiley   +1 more source

Modeling of direct tunneling gate current and gate capacitance in deep submicron MOSFETs with high-K dielectric.

open access: yes, 2002
Scaling down of MOS device dimensions is accompanied by a decrease in gate-oxide thickness and an increase in substrate doping density. When gate oxide thickness becomes less than 2 nm, a substantial current follows through gate-oxide due to direct ...
Hakim, M. M. A.
core  

Two-dimensional confinement effects in gate-all-around (GAA) MOSFETS

open access: yes, 1998
Two-dimensional electron confinement effects have been modeled and experimentally observed in silicon-on-insulator (SOI) gate-all-around (GAA) MOSFETs. Solving the Poisson and Schrodinger equations in a self-consistent manner provides the electron wave ...
X. Baie   +3 more
core   +1 more source

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