Results 101 to 110 of about 85,934 (320)
Low Temperature HfO₂ Interface Engineering in Dual-Gate and Gate-All-Around MoS₂ Transistors
IEEE Journal of the Electron Devices SocietyThis paper introduces the deposition of seed layers using a soaking technique to deposit dielectric layers on transition metal dichalcogenides (TMDs). This method addresses the bottleneck caused by the lack of dangling bonds in two-dimensional materials,
Po-Heng Pao +3 more
doaj +1 more source
Imaging of Biphoton States: Fundamentals and Applications
Advanced Functional Materials, EarlyView.Quantum states of two photons exhibit a rich polarization and spatial structure, which provides a fundamental resource of strongly correlated and entangled states. This review analyzes the physics of these intriguing properties and explores the various techniques and technologies available to measure them, including the state of the art of their ...
Alessio D'Errico, Ebrahim Karimi
wiley +1 more source
IEEE Journal of the Electron Devices Society, 2019 As technology develops, the stacked nanosheet (NS) structure demonstrates promise for use in future technology nodes. This study demonstrated the excellent performance of stacked-NS channels with junctionless gate-all-around thin-film transistors and ...
Yu-Ru Lin +3 more
doaj +1 more source
Fabrication of a Silicon Nanowire on a Bulk Substrate by Use of a Plasma Etching and Total Ionizing Dose Effects on a Gate-All-Around Field-Effect Transistor [PDF]
The gate all around transistor is investigated through experiment. The suspended silicon nanowire for the next generation is fabricated on bulk substrate by plasma etching method.
Han, Jin-Woo +2 more
core +1 more source
Advanced Functional Materials, EarlyView.This study introduces VIVID (Vesicle In Vivo Identification using DNA), a qPCR‐based platform that tracks PCR‐amplifiable DNA tags loaded in the EVs for accurate and quantifiable EV biodistribution in vivo. ABSTRACT Extracellular vesicles (EVs) represent promising carriers for nucleic acid therapeutics, offering advantages over synthetic nanoparticles ...
Oscar Boyadjian +5 more
wiley +1 more source
Strained Silicon Single Nanowire Gate-All-Around TFETs with Optimized Tunneling Junctions
Applied Sciences, 2018 In this work, we demonstrate a strained Si single nanowire tunnel field effect transistor (TFET) with gate-all-around (GAA) structure yielding Ion-current of 15 μA/μm at the supply voltage of Vdd = 0.5V with linear onset at low drain voltages.
Keyvan Narimani +4 more
doaj +1 more source
Engineering Nanowire n-MOSFETs at Lg < 8 nm
, 2013 As metal-oxide-semiconductor field-effect transistors (MOSFET) channel lengths (Lg) are scaled to lengths shorter than ...
Kim, SungGeun +5 more
core +1 more source
Bio‐Inspired Molecular Events in Poly(Ionic Liquids)
Advanced Functional Materials, EarlyView.Originating from dipolar and polar inter‐ and intra‐chain interactions of the building blocks, the topologies and morphologies of poly(ionic liquids) (PIL) govern their nano‐ and micro‐processibility. Modulating the interactions of cation‐anion pairs with aliphatic dipolar components enables the tunability of properties, facilitated by “bottom‐up ...
Jiahui Liu, Marek W. Urban
wiley +1 more source
Analytical model of nanowire FETs in a partially ballistic or dissipative transport regime
, 2009 The intermediate transport regime in nanoscale transistors between the fully ballistic case and the quasi equilibrium case described by the drift-diffusion model is still an open modeling issue.
Iannaccone, Giuseppe +2 more
core +1 more source
Deciphering Small Molecule Diffusion Parameters Across Light Responsive Polymersome Membranes
Advanced Functional Materials, EarlyView.Light‐responsive polymersomes bearing donor–acceptor Stenhouse adducts (DASAs) enable programmable control over small‐molecule transport across synthetic membranes. By systematically varying DASA density, an optimal functionalization regime is identified that maximizes light‐gated permeability.
Farzina Matubbar +7 more
wiley +1 more source