Results 101 to 110 of about 18,442,244 (245)
Configuration‐Encoded Cell Alignment by Light‐Gated Silicon Photovoltaic Microcell Arrays
Advanced Functional Materials, EarlyView.Light‐gated silicon photovoltaic microcells convert pulsed illumination into localized electrical cues. Arranging otherwise similar microcells into four‐lobed, six‐lobed, or circular patterns directs fibroblasts into corresponding local arrangements without wired stimulation.
Yifan Tao +7 more
wiley +1 more source
A Gate-All-Around Floating-Gate Memory Device with Triangular-Shaped Poly-Si Nanowire Channels
, 2013 [[abstract]]A novel gate-all-around (GAA) poly-Si floating-gate (FG) memory device with triangular nanowire (NW) channels was fabricated and characterized in this work.
蔡宗叡;TSAI,JUNG-RUEY*;李克慧Lee, Ko-Hui Lee;林鴻志Lin, Horng-Chih;黃調元;Huang, Tiao-Yuan +2 more
core
Accurate modeling of gate capacitance in deep submicron MOSFETs with high-K gate-dielectrics
, 2004 Gate capacitance of metal-oxide-semiconductor devices with ultra-thin high-K gate-dielectric materials is calculated taking into account the penetration of wave functions into the gate-dielectric.
Haque, A., Hakim, M.M.A.
core +1 more source
AIP Advances, 2016 We investigate the electrical characteristics of a double-gate-all-around (DGAA) transistor with an asymmetric channel width using three-dimensional device simulation.
Myunghwan Ryu +2 more
doaj +1 more source
Bistable Isochoric Chiral Metamaterials with Reprogrammable Multiaxial Responses
Advanced Functional Materials, EarlyView.An isochoric bistable rotational unit cell enables in situ modification of internal contact conditions post‐fabrication, without altering the global envelope dimensions of the surrounding architecture. By selectively switching between open and closed states, the tessellated chiral metamaterial can reprogram its volumetric response, including bulk ...
Shujia Chen +3 more
wiley +1 more source
High-Performance Vertical Gate-All-Around Silicon Nanowire FET With High-kappa/Metal Gate
, 2014 We present a vertical gate-all-around Si nanowire (SiNW) metal-oxide-semiconductor field-effect transistor with high-κ dielectric and TiN metal gate. The process flow is fully compatible with CMOS technologies.
Rao, Rajesh +7 more
core +1 more source
Endosomal Escape of siRNA Polyplexes: A Molecular Dynamics Perspective on Underlying Mechanisms
Advanced Functional Materials, EarlyView.Molecular dynamics simulations reveal distinct endosomal escape mechanisms of siRNA nanoparticles, ranging from electrostatic membrane attachment to hydrophobic membrane fusion. Hydrophobic residues and anionic endosomal lipids emerge as key determinants of membrane disruption, linking molecular interactions to experimental delivery performance and ...
Katharina M. Steinegger +5 more
wiley +1 more source
, 2012 Gate underlap structure can be utilized to improve the immunity to short channel effects in MOSFET devices. In this work, gate underlap design scheme in cylindrical gate-all-around MOSFETs is explored based on an analytical model.
Zhang, Lining +9 more
core +1 more source
Advanced Functional Materials, EarlyView.Neuromorphic plasticity in OECTs is governed by the post‐stimulus evolution of coupled ionic and electronic states. Semiconductor chemistry and morphology, electrolyte composition and interfaces, and device architecture regulate ion injection, transport, confinement, and release, shifting responses from rapidly relaxing STP to metastable memory and ...
Inho Lee +9 more
wiley +1 more source
Design and performance analysis of Dual-Gate All around Core-Shell Nanotube TFET
, 2019 In this research work, we have put forward Silicon based Nanotube structure with Dual Gate All around configuration. The proposed device has been compared with Conventional Nanowire structure and the comparison is concocted on account of analog ...
Intekhab Amin, S. +3 more
core +1 more source