Results 81 to 90 of about 85,934 (320)
Numerical Simulation of Hetero Dielectric Trench Gate JAM Gate-All-Around FET (HDTG-JAM-GAAFET) for Label Free Biosensing Applications [PDF]
, 2023 Shivani Yadav, Sonam Rewari
openalex +1 more source
Carrier Transport in High Mobility InAs Nanowire Junctionless Transistors
, 2015 Ability to understand and model the performance limits of nanowire transistors is the key to design of next generation devices. Here, we report studies on high-mobility junction-less gate-all-around nanowire field effect transistor with carrier mobility ...
Bajaj, Mohit. +7 more
core +2 more sources
Advanced Engineering Materials, EarlyView.Low‐consumable nickel ferrite‐based anodes for the Hall–Héroult process are compared with conventional prebaked carbon anodes using thermodynamic simulation and prospective life cycle assessment under contrasting future electricity system pathways from 2025 to 2050.
Felipe Alejandro Garcia Paz +6 more
wiley +1 more source
Advanced Engineering Materials, EarlyView.Additive manufacturing provides precise control over the placement of continuous fibres within polymer matrices, enabling customised mechanical performance in composite components. This article explores processing strategies, mechanical testing, and modelling approaches for additive manufactured continuous fibre‐reinforced composites.
Cherian Thomas, Amir Hosein Sakhaei
wiley +1 more source
Monte Carlo simulation of electron and proton irradiation of carbon nanotube and graphene transistors [PDF]
, 2014 Carbon-based nanotechnology electronics can provide high performance, low-power and low-weight solutions, which are very suitable for innovative aerospace applications.
Chatwin, Chris +2 more
core +1 more source
Statistical variability study of random dopant fluctuation on gate-all-around inversion-mode silicon nanowire field-effect transistors [PDF]
Random dopant fluctuation effects of gate-all-around inversion-mode silicon nanowire field-effect transistors (FETs) with different diameters and extension lengths are investigated.
Baek, CK +5 more
core +1 more source
An Experimental High‐Throughput Approach for the Screening of Hard Magnet Materials
Advanced Engineering Materials, EarlyView.An entire workflow for the high‐throughput characterization and analysis of compositionally graded magnetic films is presented. Characterization protocols, data management tools and data analysis approaches are illustrated with test case Sm(Fe, V)12 based films.
William Rigaut +16 more
wiley +1 more source
Current Collapse-Free and Self-Heating Performances in Normally Off GaN Nanowire GAA-MOSFETs
IEEE Journal of the Electron Devices Society, 2018 Normally off lateral GaN nanowire gate-all-around MOSFETs have been fabricated on the GaN-on-insulator substrate. The dynamic measurement proved that the devices with various nanowire heights exhibit current collapse-free characteristics implying that ...
Ki-Sik Im +6 more
doaj +1 more source
Two Dimensional Modeling of III-V Heterojunction Gate All Around Tunnel Field Effect Transistor [PDF]
Журнал нано- та електронної фізики, 2017 Tunnel Field Effect Transistor is one of the extensively researched semiconductor devices, which has captured attention over the conventional Metal Oxide Semiconductor Field Effect Transistor.
Manjula Vijh +2 more
doaj +1 more source
Advanced Functional Materials, EarlyView.An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone +11 more
wiley +1 more source