Results 81 to 90 of about 12,503,659 (299)
Effects of the physical parameter on gate all around FET
Sādhanā, 2019 As the devices are getting compact, the size of transistors reduces day by day; however, with certain limitations. Due to miniaturization, the characteristics of the transistor change due to quantum mechanical effects and the present scenario, analytically modeled surface potential-based gate all around (GAA) FET model by solving 1-D Poisson’s equation,
Amit Agarwal, P C Pradhan, Bibhu P Swain
openaire +2 more sources
Fabrication of Raised S/D Gate-All-Around Transistor and Gate Misalignment Analysis
, 2003 In this letter, we present the implementation of a new raised source/drain (S/D) gate-all-around transistor (GAT). The device is fabricated on a bulk silicon wafer using a technique known as metal-induced-lateral-crystallization (MILC).
Chan, Philip C.H. +2 more
core +1 more source
Solution‐Processed Thin‐Film Transistors With Tunable Temporal Dynamics for Neuromorphic Computing
Advanced Functional Materials, EarlyView.Solution‐processed CNT and CNT/P3HT ion‐gated transistors exhibit materials‐defined synaptic timescales: fast CNT devices for high‐frequency spiking and slow hybrid devices for temporal integration. Embedding these dynamics into coupled reservoir‐computing and spiking neural network simulations reveals that a Hybrid‐Reservoir / CNT‐SNN architecture ...
Kevin Schnittker +5 more
wiley +1 more source
Strained Silicon Single Nanowire Gate-All-Around TFETs with Optimized Tunneling Junctions
Applied Sciences, 2018 In this work, we demonstrate a strained Si single nanowire tunnel field effect transistor (TFET) with gate-all-around (GAA) structure yielding Ion-current of 15 μA/μm at the supply voltage of Vdd = 0.5V with linear onset at low drain voltages.
Keyvan Narimani +4 more
doaj +1 more source
Analitical modeling for square gate-all-around MOSFETs [PDF]
, 2020 Universidad de Granada. Departamento de Electrónica y Tecnología de los Computadores. Máster Métodos y Técnicas Avanzadas en Física (MTAF)
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, 2006 A simulation study is made of floating-body effects (FBEs) in vertical MOSFETs due to depletion isolation as the pillar thickness is reduced from 200 to 10 nm.
Ashburn, P. +5 more
core
, 2013 In this paper, the gate-all-around carbon nanotube field effect transistor (FET) with elliptical shaped gate is studied with numerical simulation to explore the gate dielectric variation effects. The simulations are carried out with the three dimensional
Shengju Zhong +17 more
core +1 more source
Performance enhancements in scaled strained-SiGe pMOSFETs with HfSiOx/TiSiN gate stacks [PDF]
, 2009 The short-channel performance of compressively strained Si0.77Ge0.23 pMOSFETs with HfSiOx/TiSiN gate stacks has been characterized alongside that of unstrained-Si pMOSFETs.
Majhi, Prashant +4 more
core +1 more source
Advanced Functional Materials, EarlyView.Develop a LiCl–PEI–PAM hydrogel with 3000% stretchability and excellent optical transparency. Through comparative studies of various salts, confirm that LiCl is the most suitable salt for high TENG output. Achieve excellent freeze‐resistant, dry‐resistant, and rapid self‐healing (10 s) properties even in extreme environments. Balance ionic conductivity,
Hai Anh Thi Le +6 more
wiley +1 more source
Interface Effects in Ultrathin Silicon on Insulator Films
Advanced Functional Materials, EarlyView.This work establishes a systematic framework to discriminate how bulk and interface phenomena affect charge transport in ultrathin P‐doped silicon‐on‐insulator (SOI) films. For Si films below 15 nm, electrical characterization demonstrates that interface states drive charge transport, shifting the metal‐insulator transition (MIT) critical dopant ...
Andrea Pulici +8 more
wiley +1 more source