Results 81 to 90 of about 18,442,244 (245)

Vertical Heterojunction Ge0.92Sn0.08/Ge Gate-All-Around Nanowire pMOSFETs

, 2019
International audienceVertical heterojunction Ge 0.92 Sn 0.08 /Ge gate-all-around (GAA) nanowire pMOSFETs fabricated with a top-down approach are reported.
Grap, Thomas, Trellenkamp, Stefan, Buca, Dan, Liu, Mingshan, von den Driesch, Nils, Knoch, Joachim, Hartmann, Jean-Michel, Mertens, Konstantin, Zhao, Qing- Tai, Zhao, Qing-Tai   +9 more
core   +1 more source

Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing

Advanced Functional Materials, EarlyView.
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin, Eunjoo Yoo, Ki‐Hoon Son, Hyun‐Sik Kim, Dae‐Hee Han, Jeong Hyeon Son, Seung Hwan Lee, Hong‐Sub Lee   +7 more
wiley   +1 more source

Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

Advanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan, Hocheon Yoo, Benoît H. Lessard, Ioannis Kymissis, Chang‐Hyun Kim   +4 more
wiley   +1 more source

Bio‐Inspired Artificial Ionic Mechanoreceptor

Advanced Functional Materials, EarlyView.
A skin‐inspired artificial mechanoreceptor based on ionic interactions is presented for biomimetic tactile sensing. Pressure‐driven ionic redistribution within microfluidic channels generates a self‐powered electrical signal without external bias. The generated waveform exhibits mechanoreceptor‐like temporal features, including overshoot and undershoot,
Mohammad Akbari, Jeppe Don, Lasse A. N. Pedersen, John Noee, Rassoul Tabassian   +4 more
wiley   +1 more source

Raised S/D gate-all-around CMOS using MILC

, 2002
Complementary metal oxide semiconductor (CMOS) gate-all-around transistors (GAT) with raised S/D was demonstrated. Steeper sub-threshold slope, better suppressing of drain-induced-barrier-lowering (DIBL) and short-channel-effect (SCE), higher drive ...
Chan, Philip C.H., Yin, Chunshan, Chan, Victor W.C.   +2 more
core  

Strained Silicon Single Nanowire Gate-All-Around TFETs with Optimized Tunneling Junctions

Applied Sciences, 2018
In this work, we demonstrate a strained Si single nanowire tunnel field effect transistor (TFET) with gate-all-around (GAA) structure yielding Ion-current of 15 μA/μm at the supply voltage of Vdd = 0.5V with linear onset at low drain voltages.
Keyvan Narimani, Stefan Trellenkamp, Andreas Tiedemann, Siegfried Mantl, Qing-Tai Zhao   +4 more
doaj   +1 more source

ATP‐Mediated Bidirectional Communication Between Natural and Artificial Cells for Controlled Bioreactions

Advanced Functional Materials, EarlyView.
Establishment of bidirectional communication behavior between natural and artificial cells. The first type of communication from natural dendritic cells to artificial polymeric cells was achieved via ATP release after cell lysis. The released ATP was taken up via gated UV‐controlled permeability increase of the polymeric membrane for performing ...
Ilona Kalte, Tsvetomir Ivanov, Leonhard Seufert, Shoupeng Cao, Lucas Caire da Silva, Volker Mailänder, Katharina Landfester   +6 more
wiley   +1 more source

Analysis of Structural Variation and Threshold Voltage Modulation in 10-nm Double Gate-All-Around (DGAA) Transistor

, 2014
Increasing short channel effects (SCE) interrupt the further technology scaling in the CMOS transistors. Beyond 10 nm technology node, the gate-all-around (GAA) FET is considered as a promising solution for continuing the Moore's law. In this paper,
Kim, Youngmin, Youngmin Kim, Ryu, Myunghwan, Myunghwan Ryu   +3 more
core   +1 more source

Fast and Efficient Light Intensity Modulation in SOI with Gate-All-Around Transistor Phase Modulator [PDF]

, 2005
We report fast modulation (>30 GHz) in a SOI resonant cavity using integrated Bragg mirrors and a gate-all-around transistor as active element.
Thévenaz, Luc, L. Thevenaz, Moselund, K. E., K.E. Moselund, Ionescu, A. M., P. Dainesi, A.M. Ionescu, Dainesi, P.   +7 more
core   +2 more sources

Impact of Strain on Sub-3 nm Gate-All-Around CMOS Logic Circuit Performance Using a Neural Compact Modeling Approach

IEEE Journal of the Electron Devices Society
Impact of strain of sub-3 nm gate-all-around (GAA) CMOS transistors on the circuit performance is evaluated using a neural compact model. The model was trained using 3D technology computer-aided design (TCAD) device simulation data of GAA field-effect ...
Ji Hwan Lee, Kihwan Kim, Kyungjin Rim, Soogine Chong, Hyunbo Cho, Saeroonter Oh   +5 more
doaj   +1 more source