Results 71 to 80 of about 12,503,659 (299)

Photogating in Suspended InAs Nanowire Field Effect Transistors for Neuromorphic Applications

Advanced Electronic Materials
Suspended indium arsenide (InAs) nanowires offer a unique platform for studying surface‐driven transport phenomena due to their high surface‐to‐volume ratio and the absence of dielectric interfaces. In this work, we investigate the role of surface states
Aniello Pelella, Valeria Demontis, Andrea Sessa, Adolfo Mazzotti, Filippo Giubileo, Valentina Zannier, Lucia Sorba, Francesco Rossella, Antonio Di Bartolomeo   +8 more
doaj   +1 more source

Solution‐Processed Two‐Dimensional Indium Oxide on Sodium‐Embedded Alumina for Reconfigurable Optoelectronic Synaptic Transistors

Advanced Functional Materials, EarlyView.
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min, Yonghyun Albert Kwon, Hyunbin Kim, Jihyun Kim, Myeongjin Jung, Jaewon Heo, Gwang Ya Kim, Vlastimil Mazanek, Zdeněk Sofer, In Soo Kim, Jeong Ho Cho, Hyesung Park, Sang Min Won, Joohoon Kang   +13 more
wiley   +1 more source

Exciton Binding Energy of Phosphorescent Emitter Molecules in Organic Light‐Emitting Diodes

Advanced Functional Materials, EarlyView.
Energy level alignment is key to efficient OLED design, yet determining LUMO energies remains challenging. A methodology based on field‐induced dissociation and kinetic Monte Carlo simulations is presented to extract LUMO energies of iridium‐based phosphorescent emitters from their exciton binding energy.
Hiroki Tomita, Lucas R. L. Norg, Patrick Diederen, Clint van Hoesel, Christ H. L. Weijtens, Peter A. Bobbert, Reinder Coehoorn   +6 more
wiley   +1 more source

A comparison of performance between double-gate and gate-all-around nanowire mosfet

, 2019
Due to the rapid scaling of Complementary Metal-Oxide-Semiconductor (CMOS), the structure of the planar MOSFET approaches the scaling limits when the short channel effects (SCEs) become the main problem.
Hamid, Fatimah A., Razali, M. Anas, A.Hamid, Fatimah, Kosmani, Nor Fareza, Fareza Kosmani, Nor   +4 more
core   +1 more source

3D Printing Innovations in Polymeric Porous and Patterned Architecture

Advanced Functional Materials, EarlyView.
Polymeric foams occupy a unique structural space between dense solids and open networks, where engineered void fraction governs mechanical compliance, thermal resistance, and mass transport. Additive manufacturing now enables precise spatial control over cellular architecture, unlocking designer foam structures across applications spanning crash ...
Dhanush Patil, Sri Vaishnavi Thummalapalli, Clarissa Westover, Arunachalam Ramanathan, M. Taylor Sobzcak, Roumika Patil, Qixuan Xiang, Tiantian Li, Sui Yang, Timothy E. Long, Hongyue Sun, Xianqiao Wang, Yang Liu, Kenan Song   +13 more
wiley   +1 more source

Low Temperature HfO₂ Interface Engineering in Dual-Gate and Gate-All-Around MoS₂ Transistors

IEEE Journal of the Electron Devices Society
This paper introduces the deposition of seed layers using a soaking technique to deposit dielectric layers on transition metal dichalcogenides (TMDs). This method addresses the bottleneck caused by the lack of dangling bonds in two-dimensional materials,
Po-Heng Pao, Cheng-Yi Lin, Heng-Tung Hsu, Chao-Hsin Chien   +3 more
doaj   +1 more source

Sub-micron, Metal Gate, High-к Dielectric, Implant-free, Enhancement-mode III-V MOSFETs [PDF]

, 2007
The performance of 300nm, 500nm and 1μm metal gate, implant free, enhancement mode III-V MOSFETs are reported. Devices are realised using a 10nm MBE grown Ga2O3/(GaxGd1-x)2O3 high-κ (κ=20) dielectric stack grown upon a δ-doped AlGaAs/InGaAs/AlGaAs ...
Moran, D.A.J., D. A. J. Moran, H. Zhou, I. G. Thayne, M. Passlack, K. Rajagopalan, Passlack, M., X. Li, Li, X., Thayne, I.G., Droopad, R., McIntyre, D., Zhou, H., J. Abrokwah, D. McIntyre, Abrokwah, J., P. Zurcher, S. Thoms, R. Droopad, Zurcher, P., R. J. W. Hill, Thoms, S., Rajagopalan, K., Hill, R.J.W.   +23 more
core   +1 more source

Electro‐Steric Ion Confinement in Polyelectrolyte Networks for Robust Nonvolatile Artificial Synapse

Advanced Functional Materials, EarlyView.
Polyelectrolyte stoichiometry governs ion transport and retention in electrolyte‐gated synaptic transistors. A PSS‐rich network creates electro‐steric ion confinement that suppresses ion back‐diffusion and stabilizes channel doping, enabling robust nonvolatile synaptic memory, linear weight updates, and low‐energy operation.
Donghwa Lee, Jinbo Kim, Myeongjin An, Jisoo Park, Junho Sung, Eunsung Hwang, Suhwan Seok, Seong‐Min Bak, Jeonghun Kim, Eunho Lee   +9 more
wiley   +1 more source

Impact of Strain on Sub-3 nm Gate-All-Around CMOS Logic Circuit Performance Using a Neural Compact Modeling Approach

IEEE Journal of the Electron Devices Society
Impact of strain of sub-3 nm gate-all-around (GAA) CMOS transistors on the circuit performance is evaluated using a neural compact model. The model was trained using 3D technology computer-aided design (TCAD) device simulation data of GAA field-effect ...
Ji Hwan Lee, Kihwan Kim, Kyungjin Rim, Soogine Chong, Hyunbo Cho, Saeroonter Oh   +5 more
doaj   +1 more source

Depletion-Isolation Effect in Vertical MOSFETs During the Transition From Partial to Fully Depleted Operation

, 2006
A simulation study is made of floating-body effects (FBEs) in vertical MOSFETs due to depletion isolation as the pillar thickness is reduced from 200 to 10 nm.
Ashburn, Peter, Hakim, M. M. A., Gili, E., Uchino, T., Hall, S., de Groot, C.H.   +5 more
core