Results 51 to 60 of about 85,934 (320)

Green's function approach to transport through a gate-all-around Si nanowire under impurity scattering

, 2007
We investigate transport properties of gate-all-around Si nanowires using non-equilibrium Green's function technique. By taking into account of the ionized impurity scattering we calculate Green's functions self-consistently and examine the effects of ...
D. Ahn, E. O. Johnson, G. Ingold, H. Sakaki, Jung Hyun Oh, K. H. Cho, R. A. Smith, R. Lake, S. Datta, S. W. Hwang, Y. S. Yu   +10 more
core   +1 more source

Characteristics of gate-all-around silicon nanowire field effect transistors with asymmetric channel width and source/drain doping concentration [PDF]

, 2012
We performed 3D simulations to demonstrate structural effects in sub-20 nm gate-all-around silicon nanowire field effect transistors having asymmetric channel width along the channel direction.
Bangsaruntip S., Chang-Ki Baek, Chen J., Chen J., Dupré C., Myung-Dong Ko, Schulz T., Seongwook Choi, Sooyoung Park, Sunouchi K., Tachi K., Taiuk Rim, Takato H., Yoon-Ha Jeong   +13 more
core   +1 more source

Design, Simulation and Optimization of an Enhanced Vertical GaN Nanowire Transistor on Silicon Substrate for Power Electronic Applications

IEEE Access, 2023
A new vertical transistor structure based on GaN nanowire is designed and optimized using the TCAD-Santaurus tool with an electrothermal model. The studied structure with quasi-1D drift region is adapted to GaN nanowires synthesized with the bottom-up ...
Mohammed Benjelloun, Zahraa Zaidan, Ali Soltani, Noelle Gogneau, Denis Morris, Jean-Christophe Harmand, Hassan Maher Maher   +6 more
doaj   +1 more source

III-V 4D Transistors [PDF]

, 2012
We fabricated for the first time vertically and laterally integrated III-V 4D transistors. III-V gate-all-around (GAA) nanowire MOSFETs with \(3×4\) arrays show high drive current of \(1.35mA/ \mu m\) and high transconductance of \(0.85mS/ \mu m\).
Gordon, Roy Gerald, Gu, J.J., Manfra, M.J., Neal, A.T., Shao, J., Wang, Xinwei, Ye, P.D.   +6 more
core   +1 more source

Gate-all-around silicon nanowire FET modeling [PDF]

, 2019
As a further extension of the multi-gate MOSFET, the gate-all-around (GAA) silicon nanowire FET is the most promising nanostructure design for next generation semiconductor device. Recent research work demonstrates the excellent device performance of GAA silicon nanowire FET, especially the gate controllability and short channel effect immunity.
openaire   +2 more sources

Variability Improvement by Interface Passivation and EOT Scaling of InGaAs Nanowire MOSFETs [PDF]

, 2013
High-performance InGaAs gate-all-around (GAA) nanowire MOSFETs with channel length (\(L_{ch}\)) down to 20 nm are fabricated by integrating a higher-k \(LaAlO_3\)-based gate-stack with an equivalent oxide thickness of 1.2nm. It is found that inserting an
Gordon, Roy Gerald, Gu, Jiangjiang J., Wang, Xinwei, Wu, Heng, Ye, Peide D.   +4 more
core   +2 more sources

Small Signal Parameter Extraction of III-V Heterojunction Surrounding Gate Tunnel Field Effect Transistor [PDF]

Журнал нано- та електронної фізики, 2017
This work presents simulation study and analysis of nanoscale III-V Heterojunction Gate All Around Tunnel Field Effect Transistor, along with the extraction of small signal parameters of the device.
ManjulaВ Vijh, R.S.В Gupta, SujataВ Pandey   +2 more
doaj   +1 more source

Simulation study of vertically stacked lateral Si nanowires transistors for 5 nm CMOS applications [PDF]

, 2017
In this paper we present a simulation study of vertically stacked lateral nanowires transistors (NWTs), which may have applications at 5nm CMOS technology.
Adamu-Lema, F., Al-Ameri, Talib, Asenov, Asen, Georgiev, V.P.   +3 more
core   +1 more source

Tau acetylation at K331 has limited impact on tau pathology in vivo

FEBS Letters, EarlyView.
We mapped tau post‐translational modifications in humanized MAPT knock‐in mice and in amyloid‐bearing double knock‐in mice. Acetylation within the repeat domain, particularly around K331, showed modest increases under amyloid pathology. To test functional relevance, we generated MAPTK331Q knock‐in mice.
Shoko Hashimoto, Yukio Matsuba, Mika Takahashi, Takaomi C. Saido   +3 more
wiley   +1 more source

Using ultra-thin parylene films as an organic gate insulator in nanowire field-effect transistors

, 2018
We report the development of nanowire field-effect transistors featuring an ultra-thin parylene film as a polymer gate insulator. The room temperature, gas-phase deposition of parylene is an attractive alternative to oxide insulators prepared at high ...
Carrad, D.J.,, Cochrane, J.W.,, Gluschke, J.G.,, Lehmann, Sebastian,, Lund University., Lund University., Lyttleton, Roman,, Micholich, A.P.,, Samuelson, Lars,, Seidl, J.,   +9 more
core   +1 more source