Results 51 to 60 of about 18,442,244 (245)

MITF maintains genome stability in nonmelanocyte lineages

Molecular Oncology, EarlyView.
MITF is essential for melanocyte survival and acts as an oncogene in 10%–20% of melanomas. We show that MITF depletion causes genome instability in nonmelanocytic cells, leading to LATS2‐mediated P53 activation, cell cycle arrest, and apoptosis. This study highlights the role of MITF as a genome maintenance factor beyond the melanocyte lineage. Created
Drifa H. Gudmundsdottir, Adrián López García de Lomana, Thejus B. Venkatesh, Kritika Kirty, Snaevar Sigurdsson, Linda Vidarsdottir, Ramile Dilshat, Erla Sveinbjornsdottir, Snaedis Ragnarsdottir, Daniel H Magnusson, Maria R. Bustos, Eirikur Steingrimsson, Thorkell Gudjonsson, Stefan Sigurdsson   +13 more
wiley   +1 more source

Externally assembled gate-all-around carbon nanotube field-effect transistor [PDF]

, 2008
In this letter, we demonstrate a gate-all-around single-wall carbon nanotube field-effect transistor. This is the first successful experimental implementation of an off-chip gate and gate-dielectric assembly with subsequent deposition on a suitable ...
Chen, Zhihong, Gordon, Roy, Farmer, Damon, Xu, Sheng, Avouris, Phaedon, Appenzeller, Joerg   +5 more
core  

Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFET

, 2010
An analytic subthreshold potential model for gate underlap cylindrical gate-all-around (GAA) MOSFETs is presented in this work. The fringing field from the gate to underlap regions is derived by using channel length transformation and conformal mapping ...
Zhang, Lining, Ma, Chenyue, Chan, Mansun, He, Jin, Lin, Xinnan, Lining Zhang, Chenyue Ma, Xinnan Lin, Mansun Chan, Jin He   +9 more
core   +1 more source

Gate All around with Back Gate NAND Flash Structure for Excellent Reliability Characteristics in Program Operation

, 2021
A gate all around with back-gate (GAAB) structure was proposed for 3D NAND Flash memory technology. We demonstrated the excellent characteristics of the GAAB NAND structure, especially in the self-boosting operation.
Jae-Min Sim, Bong-Seok Kim, In-Ho Nam, Yun-Heub Song   +3 more
core   +1 more source

Complementary Field Effect Transistor (CFET) for the 2-nm Technology Node: A Review From Device to Circuit Perspectives

IEEE Journal of the Electron Devices Society
The relentless advancement of the semiconductor industry continues to be fueled by the pursuit of enhanced transistor performance. As CMOS technology undergoes aggressive scaling to enable higher integration densities in modern integrated circuits (ICs),
J. Ajayan, Vakkalakula Bharath Sreenivasulu, Amit Krishna Dwivedi, Shubham Tayal   +3 more
doaj   +1 more source

Unique circulating miRNAome signatures captured with distinct molecular states in Lynch syndrome and sporadic colorectal cancer

Molecular Oncology, EarlyView.
Circulating microRNA profiles distinguish nonmalignant Lynch syndrome from cancer‐associated Lynch syndrome, sporadic colorectal cancer, and healthy controls. Age‐stratified analysis reveals disease‐specific regulatory states, and a six‐miRNA panel shows concordant separation in an independent colorectal tissue cohort.
Ramadhani Salum Chambuso, Md Shohel Ul Islam, Rosa M Xicola, Raj Ramesar, Xavier Llor, Sinclair Steele   +5 more
wiley   +1 more source

Fabrication of Raised S/D Gate-All-Around Transistor and Gate Misalignment Analysis

, 2003
In this letter, we present the implementation of a new raised source/drain (S/D) gate-all-around transistor (GAT). The device is fabricated on a bulk silicon wafer using a technique known as metal-induced-lateral-crystallization (MILC).
Chan, Philip C.H., Yin, Chunshan, Chan, Victor W.C.   +2 more
core   +1 more source

BCB Evaluation of High-Performance and Low-Leakage Three-Independent-Gate Field-Effect Transistors

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2018
Three-independent-gate field-effect transistors (TIGFETs) are a promising next-generation device technology. Their controllable-polarity capability allows for superior design of arithmetic and sequential logic gates.
Jorge Romero-Gonzalez, Pierre-Emmanuel Gaillardon   +1 more
doaj   +1 more source

Optimizing photoactivation of PA‐mCherry for optical pooled CRISPR screens

FEBS Open Bio, EarlyView.
Photoactivatable PA‐mCherry finds widespread use to optically tag individual cells. However, confocal 405 nm UV laser‐scanning (normal scan) is much less efficient than widefield UV illumination, limiting the use of PA‐mCherry on confocal instruments. We remedy this limitation by reporting that rapid and repeated confocal scanning with a low‐intensity,
Sravasti Mukherjee, Giulia Zanetti, Bram van den Broek, Kees Jalink   +3 more
wiley   +1 more source

Sub‑5 nm Gate-All-Around InP Nanowire Transistors toward High-Performance Devices

, 2023
The gate-all-around (GAA) nanowire (NW) field-effect transistor (FET) is a promising device architecture due to its superior gate controllability compared to that of the conventional FinFET architecture.
Ruge Quhe (1619785), Yee Sin Ang (5194844), Aili Wang (54033), Lianqiang Xu (1780780), Linqiang Xu (11336725), Qiuhui Li (381231), Ying Li (38224), Ying Guo (53523), Jing Lu (120666), Shibo Fang (431947)   +9 more
core   +1 more source