Results 51 to 60 of about 12,503,659 (299)
MITF maintains genome stability in nonmelanocyte lineages
MITF is essential for melanocyte survival and acts as an oncogene in 10%–20% of melanomas. We show that MITF depletion causes genome instability in nonmelanocytic cells, leading to LATS2‐mediated P53 activation, cell cycle arrest, and apoptosis. This study highlights the role of MITF as a genome maintenance factor beyond the melanocyte lineage. Created
Drifa H. Gudmundsdottir +13 more
wiley +1 more source
In this paper we present the modeling and simulation of multiple-hop routing in ultrafast all-optical packet switching based routers employing multiple pulse position modulation (PPM) formatted routing table.
Ghassemlooy, Zabih +9 more
core +1 more source
Cytosolically synthesized chloroplast preproteins are translocated across the outer and inner envelope membranes through translocons called TOC and TIC, respectively. In green algae and plants, the TIC core is composed of essential membrane proteins, Tic12, Tic20, and Tic214.
Mengyi Li, Xueyang Zhao, Masato Nakai
wiley +1 more source
Optimizing photoactivation of PA‐mCherry for optical pooled CRISPR screens
Photoactivatable PA‐mCherry finds widespread use to optically tag individual cells. However, confocal 405 nm UV laser‐scanning (normal scan) is much less efficient than widefield UV illumination, limiting the use of PA‐mCherry on confocal instruments. We remedy this limitation by reporting that rapid and repeated confocal scanning with a low‐intensity,
Sravasti Mukherjee +3 more
wiley +1 more source
Cryogenic CMOS technology provides a promising approach to surpass the Boltzmann limit and advance Moore’s Law, addressing the increasing demand for high-performance computing. However, at cryogenic temperatures, the subthreshold swing (SS) of the device
Lewen Qian +6 more
doaj +1 more source
BCB Evaluation of High-Performance and Low-Leakage Three-Independent-Gate Field-Effect Transistors
Three-independent-gate field-effect transistors (TIGFETs) are a promising next-generation device technology. Their controllable-polarity capability allows for superior design of arithmetic and sequential logic gates.
Jorge Romero-Gonzalez +1 more
doaj +1 more source
The Double-Gate and Gate-all-Around are said to be the promising candidates to pursue Complementary-Metal-Oxide Semiconductor scaling. When the device is scaled down, several problems arise such as the short-channel effect, excessive transistor ...
Kosmani, Nor Fareza
core
Gate electrostatic controllability enhancement in nanotube gate all around field effect transistor
Recently, short channel effects (SCE) and power consumption dissipation problems impose tremendous challenges that need imperative actions to be taken to deal with for field effect transistor to further scale down as semiconductor technology enters into ...
Chunlai Li +9 more
core +1 more source
Objective We examined whether 18 months of strength training in individuals with knee varus alignment and medial tibiofemoral osteoarthritis (OA) reduced knee joint loads during walking compared to an attention control group. Methods This study was a secondary analysis of a randomized clinical trial that compared the effects of strength training to a ...
Stephen P. Messier +12 more
wiley +1 more source
Current Collapse-Free and Self-Heating Performances in Normally Off GaN Nanowire GAA-MOSFETs
Normally off lateral GaN nanowire gate-all-around MOSFETs have been fabricated on the GaN-on-insulator substrate. The dynamic measurement proved that the devices with various nanowire heights exhibit current collapse-free characteristics implying that ...
Ki-Sik Im +6 more
doaj +1 more source

