Results 31 to 40 of about 81,608 (254)

Small Signal Parameter Extraction of III-V Heterojunction Surrounding Gate Tunnel Field Effect Transistor [PDF]

open access: yesЖурнал нано- та електронної фізики, 2017
This work presents simulation study and analysis of nanoscale III-V Heterojunction Gate All Around Tunnel Field Effect Transistor, along with the extraction of small signal parameters of the device.
ManjulaВ Vijh   +2 more
doaj   +1 more source

IMPDH inhibition enhances cytarabine efficacy in SAMHD1‐expressing leukaemia cells via guanine nucleotide depletion

open access: yesMolecular Oncology, EarlyView.
Cytarabine is a key therapy for acute myeloid leukaemia (AML), but its efficacy is limited by the dNTPase SAMHD1, which hydrolyses its active metabolite. Screening nucleotide biosynthesis inhibitors revealed that IMPDH inhibitors selectively sensitise SAMHD1‐proficient AML cells to cytarabine.
Miriam Yagüe‐Capilla   +9 more
wiley   +1 more source

MITF maintains genome stability in nonmelanocyte lineages

open access: yesMolecular Oncology, EarlyView.
MITF is essential for melanocyte survival and acts as an oncogene in 10%–20% of melanomas. We show that MITF depletion causes genome instability in nonmelanocytic cells, leading to LATS2‐mediated P53 activation, cell cycle arrest, and apoptosis. This study highlights the role of MITF as a genome maintenance factor beyond the melanocyte lineage. Created
Drifa H. Gudmundsdottir   +13 more
wiley   +1 more source

Research on Ultra-Large Sensing Range and High Linearity Cavity Sensing Devices

open access: yesIEEE Access
Gate-All-Around (GAA) transistors demonstrate significant potential for sensing applications due to their enhanced gate control and excellent scalability.
Yu-Ching Liao, Yu-Hsien Lin
doaj   +1 more source

FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and Variability

open access: yesIEEE Journal of the Electron Devices Society, 2018
Performance, scalability, and resilience to variability of Si SOI FinFETs and gate-all-around (GAA) nanowires (NWs) are studied using in-house-built 3-D simulation tools. Two experimentally based devices, a 25-nm gate length FinFET and a 22-nm GAA NW are
Daniel Nagy   +5 more
doaj   +1 more source

Optimizing photoactivation of PA‐mCherry for optical pooled CRISPR screens

open access: yesFEBS Open Bio, EarlyView.
Photoactivatable PA‐mCherry finds widespread use to optically tag individual cells. However, confocal 405 nm UV laser‐scanning (normal scan) is much less efficient than widefield UV illumination, limiting the use of PA‐mCherry on confocal instruments. We remedy this limitation by reporting that rapid and repeated confocal scanning with a low‐intensity,
Sravasti Mukherjee   +3 more
wiley   +1 more source

Does Long‐Term Lower Extremity Strength Training in Adults With Knee Osteoarthritis and Varus Alignment Reduce Knee Joint Loading During Gait?

open access: yesArthritis Care &Research, EarlyView.
Objective We examined whether 18 months of strength training in individuals with knee varus alignment and medial tibiofemoral osteoarthritis (OA) reduced knee joint loads during walking compared to an attention control group. Methods This study was a secondary analysis of a randomized clinical trial that compared the effects of strength training to a ...
Stephen P. Messier   +12 more
wiley   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

open access: yesAdvanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone   +11 more
wiley   +1 more source

Complementary Field Effect Transistor (CFET) for the 2-nm Technology Node: A Review From Device to Circuit Perspectives

open access: yesIEEE Journal of the Electron Devices Society
The relentless advancement of the semiconductor industry continues to be fueled by the pursuit of enhanced transistor performance. As CMOS technology undergoes aggressive scaling to enable higher integration densities in modern integrated circuits (ICs),
J. Ajayan   +3 more
doaj   +1 more source

Printed Integrated Logic Circuits Based on Chitosan‐Gated Organic Transistors for Future Edible Systems

open access: yesAdvanced Functional Materials, EarlyView.
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco   +8 more
wiley   +1 more source

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