FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and Variability [PDF]
IEEE Journal of the Electron Devices Society, 2018 Performance, scalability, and resilience to variability of Si SOI FinFETs and gate-all-around (GAA) nanowires (NWs) are studied using in-house-built 3-D simulation tools. Two experimentally based devices, a 25-nm gate length FinFET and a 22-nm GAA NW are
Daniel Nagy +5 more
doaj +5 more sources
Impact of Stress and Dimension on Nanosheet Deformation during Channel Release of Gate-All-Around Device [PDF]
Micromachines, 2023 In this paper, nanosheet deformation during channel release has been investigated and discussed in Gate-All-Around (GAA) transistors. Structures with different source/drain size and stacked Si nanosheet lengths were designed and fabricated.
Jingwen Yang +12 more
doaj +2 more sources
A Simulation Study of a Gate-All-Around Nanowire Transistor with a Core–Insulator [PDF]
Micromachines, 2020 Ultra-low power and high-performance logical devices have been the driving force for the continued scaling of complementary metal oxide semiconductor field effect transistors which greatly enable electronic devices such as smart phones to be energy ...
Yannan Zhang, Ke Han, and Jiawei Li
doaj +2 more sources
Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs [PDF]
Nanomaterials, 2021 A 16-nm-Lg p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology.
Jie Gu +16 more
doaj +2 more sources
Vertical Gate-All-Around Device Architecture to Improve the Device Performance for Sub-5-nm Technology [PDF]
Micromachines, 2022 In this work, we propose a vertical gate-all-around device architecture (GAA-FinFET) with the aim of simultaneously improving device performance as well as addressing the short channel effect (SCE).
Changwoo Noh +3 more
doaj +2 more sources
IEEE Journal of the Electron Devices SocietyImpact of strain of sub-3 nm gate-all-around (GAA) CMOS transistors on the circuit performance is evaluated using a neural compact model. The model was trained using 3D technology computer-aided design (TCAD) device simulation data of GAA field-effect ...
Ji Hwan Lee +5 more
doaj +2 more sources
A machine learning approach to model the impact of line edge roughness on gate-all-around nanowire FETs while reducing the carbon footprint. [PDF]
PLoS One, 2023 García-Loureiro A +4 more
europepmc +2 more sources
An Overview of Hot Carrier Degradation on Gate-All-Around Nanosheet Transistors [PDF]
MicromachinesGate-All-Around (GAA) Nanosheet (NS) transistors have been identified as the device architecture for 3 nm and beyond as they provide additional scaling benefits.
Huimei Zhou
doaj +2 more sources
A Novel Germanium-Around-Source Gate-All-Around Tunnelling Field-Effect Transistor for Low-Power Applications [PDF]
Micromachines, 2020 This paper presents a germanium-around-source gate-all-around tunnelling field-effect transistor (GAS GAA TFET). The electrical characteristics of the device were studied and compared with those of silicon gate-all-around and germanium-based-source gate ...
Ke Han +4 more
doaj +2 more sources
Combining quasi-one-dimensional modeling with region-wise structure analysis for rapid technology computer-aided design simulations of gate-all-around MOSFETs. [PDF]
Commun EngLee KW +4 more
europepmc +3 more sources