Results 151 to 160 of about 12,503,659 (299)

Analog and RF performance optimization for gate all around tunnel FET using broken-gap material. [PDF]

Sci Rep, 2022
Kumar P, Koley K, Mech BC, Maurya A, Kumar S.   +4 more
europepmc   +1 more source

Bias‐Field Free Single‐Frequency CW‐ODMR of Nitrogen‐Vacancy Centers in Diamond for the Detection of Transient Electrical Signals

Advanced Materials Interfaces, EarlyView.
Simplified quantum sensing technique for the detection of short electrical signals occurring in neuronal signaling or bioinspired technologies. We demonstrate a single frequency continuous‐wave optically detected magnetic resonance (CW‐ODMR) approach to sense signals that can be as short as 0.2 ms.
João Paulo Silva, Orlando D. Cunha, Pedro Magalhães, Filipe Camarneiro, Jana B. Nieder   +4 more
wiley   +1 more source

Label‐Free Detection of a Neurotransmitter Using an Aptamer‐Functionalized Amorphous IGZO Transistor

Advanced Materials Interfaces, EarlyView.
An aptamer‐functionalized amorphous IGZO thin‐film transistor enables label‐free electrical detection of the neurotransmitter serotonin under liquid‐gated operation. Stepwise surface functionalization ensures stable biomolecule integration and efficient electrostatic coupling.
Ngoc Thanh Ho, Sina Jamali, Nam‐Trung Nguyen, Tuan‐Khoa Nguyen   +3 more
wiley   +1 more source

Nanowire gate all around-TFET-based biosensor by considering ambipolar transport. [PDF]

Appl Phys A Mater Sci Process, 2021
Reddy NN, Panda DK.
europepmc   +1 more source

Van der Waals Chromium Telluride Thin Films Prepared by Hybrid Pulsed Laser Deposition With Tunable Magnetism

Advanced Materials Interfaces, EarlyView.
Epitaxial Cr(1+δ)Te2 thin films were synthesized via hybrid Pulsed Laser Deposition (PLD) that combined Molecular Beam Epitaxy (MBE) techniques with PLD. Control of the Cr intercalation, δ, enabled modulation of magnetic anisotropy, Curie temperature, and transport properties.
Pia Henning, Anna Tschesche, Tobias Meyer, Jasnamol Palakkal   +3 more
wiley   +1 more source

On the Vertically Stacked Gate-All-Around Nanosheet and Nanowire Transistor Scaling beyond the 5 nm Technology Node. [PDF]

Nanomaterials (Basel), 2022
Wong H, Kakushima K.
europepmc   +1 more source

A Reproducible and Scalable Process for High Yield Mesenchymal Stromal Cell Extracellular Vesicles Production

Advanced Materials Technologies, EarlyView.
Mesenchymal stem cell derived extracellular vesicles (MSC‐EVs) are a promising therapeutic tool for regenerative medicine. However, the field lacks a reproducible high‐yield production method to answer the quantities needed for clinical translation.
Christophe Wong, Elise Madec, Jeanne Volatron, Max Piffoux, Amanda K. A. Silva, Florence Gazeau, Jean‐Philippe Herbeuval, Thibaut Fourniols   +7 more
wiley   +1 more source

3D atomic-scale metrology of strain relaxation and roughness in Gate-All-Around transistors via electron ptychography. [PDF]

Nat Commun
Karapetyan S, Zeltmann SE, Wilk G, Chen TK, Hou VD, Muller DA.   +5 more
europepmc   +1 more source

Power Reduction in Punch-Through Current-Based Electro-Thermal Annealing in Gate-All-Around FETs. [PDF]

Micromachines (Basel), 2022
Kim MK, Choi YK, Park JY.
europepmc   +1 more source

Gate Capacitance of deep submicron MOSFETS with high-K gate dielectrics

, 2002
We study gate capacitance of deep submicron MOSFETs with high-K gate dielectrics. Schrödinger’s equation is solved by applying an open boundary condition at silicon-gate dielectric interface.
Haque, A, Hakim, MMA
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