Analog and RF performance optimization for gate all around tunnel FET using broken-gap material. [PDF]
Sci Rep, 2022 Kumar P +4 more
europepmc +1 more source
Gate-All-Around Silicon Nanowire Devices: Are these the Future of CMOS? [PDF]
, 2008 Guo-Qiang P. Lo
openalex +1 more source
Spin and Charge Control of Topological End States in Chiral Graphene Nanoribbons on a 2D Ferromagnet
Advanced Materials, EarlyView.Chiral graphene nanoribbons on a ferromagnetic gadolinium‐gold surface alloy display tunable spin and charge states at their termini. Atomic work function variations and exchange fields enabe transitions between singlet, doublet, and triplet configurations.
Leonard Edens +8 more
wiley +1 more source
Mesoporous Silica Nanoparticles in Biomedicine: Advances and Prospects
Advanced Materials, EarlyView.Mesoporous silica nanoparticles offer unique properties like high surface area, tunable pores, and functionalization. They excel in drug delivery, tissue engineering, and stimuli‐responsive therapies, enabling targeted and controlled treatments. With roles in cancer therapy and diagnostics, their clinical translation requires addressing challenges in ...
Miguel Manzano, María Vallet‐Regí
wiley +1 more source
Nanowire gate all around-TFET-based biosensor by considering ambipolar transport. [PDF]
Appl Phys A Mater Sci Process, 2021 Reddy NN, Panda DK.
europepmc +1 more source
Advanced Materials, EarlyView.This study demonstrates a self‐assembly process to generate free‐standing piezoelectric nanomembranes, forming ultracompact microtubular acoustic wave sensors and actuators. The miniaturized 3D piezoelectric platform reported in this work can be applied in telecommunication, energy harvesting, and acoustofluidics. Moreover, the 3D self‐assembly can add
Raphaël C. L‐M. Doineau +9 more
wiley +1 more source
On the Vertically Stacked Gate-All-Around Nanosheet and Nanowire Transistor Scaling beyond the 5 nm Technology Node. [PDF]
Nanomaterials (Basel), 2022 Wong H, Kakushima K.
europepmc +1 more source
Role of the Recombination Zone in Organic Light‐Emitting Devices
Advanced Materials, EarlyView.This review summarizes the critical role of the recombination zone in organic light‐emitting diodes (OLEDs). We highlight that broadening the recombination zone in OLEDs based on emissive layers with balanced charge transport and high photoluminescence quantum yields provides a promising route toward achieving both long operational lifetime and high ...
Yungui Li, Karl Leo
wiley +1 more source
3D atomic-scale metrology of strain relaxation and roughness in Gate-All-Around transistors via electron ptychography. [PDF]
Nat CommunKarapetyan S +5 more
europepmc +1 more source
Power Reduction in Punch-Through Current-Based Electro-Thermal Annealing in Gate-All-Around FETs. [PDF]
Micromachines (Basel), 2022 Kim MK, Choi YK, Park JY.
europepmc +1 more source