Results 211 to 220 of about 81,608 (254)

p-GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability

IEEE Electron Device Letters, 2021
Song Wenjie, Li Zhang, Kevin J Chen
exaly  

Exploring Power Savings of Gate-All-Around Cryogenic Technology

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
Victor Moroz, Alexei Svizhenko, Munkang Choi, Plamen Asenov, Jaehyun Lee   +4 more
openaire   +1 more source

Vertical gate all-around transistor

2021
ZHANG JOHN H, RADENS CARL, CLEVENGER LAWRENCE A, XU YIHENG   +3 more
openaire   +1 more source

Top‐Gate Organic Field‐Effect Transistors with High Environmental and Operational Stability

Advanced Materials, 2011
Canek Fuentes-Hernandez, Do Kyung Hwang, Bernard Kippelen   +2 more
exaly  

Graded superlattice structure for gate all around devices

2023
HUANG YI-CHIAU, TOMASINI PIERRE, DUBE ABHISHEK   +2 more
openaire   +2 more sources

Gate-all-around transistors stack up

Nature Electronics, 2020
openaire   +1 more source

Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions

Materials Science and Engineering Reports, 2006
Michel Houssa, Guido Groeseneken, M M Heyns   +2 more
exaly  

Gate-all-around FETs

Yogesh Singh Chauhan, Girish Pahwa, Avirup Dasgupta, Darsen Lu, Sriramkumar Venugopalan, Sourabh Khandelwal, Juan Pablo Duarte, Navid Paydavosi, Ali Niknejad, Chenming Hu, Sayeef Salahuddin   +10 more
openaire   +1 more source

p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current

IEEE Electron Device Letters, 2013
Injun Hwang, Jongseob Kim, Jaikwang Shin   +2 more
exaly  

Double-Gate Tunnel FET With High-$\kappa$ Gate Dielectric

IEEE Transactions on Electron Devices, 2007
Adrian Ionescu
exaly