Results 211 to 220 of about 85,934 (320)

Design and Analysis of High-K Wrapped GaN Gate All Around FET as High-Frequency Device in IOT Systems

Sneha Singh, Rudra Sankar Dhar, Amit Banerjee, Vinay Gupta   +3 more
openalex   +1 more source

Versatile Magneto‐Dielectric Response of Epitaxial Thin Films of the High Entropy Oxide Perovskite Nd(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3

Advanced Materials, EarlyView.
The magnetic high entropy oxide perovskite Nd(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 exhibits a substantially large dielectric constant (εr) at room temperature, which shows distinct anionic and cationic contributions in the form of zero and finite bias peaks, respectively, down to its magnetic transition temperature (Tmag).
Roxana Capu, Ryan Thompson, C. Willem Rischau, Marli R. Cantarino, Premysl Marsik, Sergey L. Bud'ko, Neven Biškup, María Varela, Yurii G. Pashkevich, Serhii M. Orel, Thomas Prokscha, Andreas Suter, Jiangtao Zhao, Ugwumsinachi Oji, Marco Bonura, Peter Bencok, Zaher Salman, Stefano Gariglio, Christian Bernhard, Subhrangsu Sarkar   +19 more
wiley   +1 more source

Analyze the Tunneling Effect on Gate-All-Around Field Effect Transistor

, 2014
Awanit Sharma, Shyam Akashe
openalex   +1 more source

Precise Microstructural and Stoichiometric Control Advances Flexible Ag2Te Thin‐Film Thermoelectrics for Wearable Energy Harvesting

Advanced Materials, EarlyView.
Flexible Ag2Te thin films achieving a record‐high mobility of 4756 cm2 V−1 s−1 and a peak power factor of 18.5 µW cm−1 K−2 are developed via precise structural control. The assembled flexible devices demonstrate excellent mechanical stability and ultrafast voltage response, enabling precise thermal detection when integrated into a robotic gripper for ...
Yue‐Xing Chen, Xiao‐Lei Shi, Ning Chen, Dong Yang, Zhongzhao Zha, Hanwen Xu, Mohammad Nisar, Tianyi Cao, Boxuan Hu, Meng Li, Ziya Wang, Fu Li, Guangxing Liang, Jingting Luo, Zhuanghao Zheng, Zhi‐Gang Chen   +15 more
wiley   +1 more source

Negative capacitance gate-all-around PZT silicon nanowire with high-K/metal gate MFIS structure for low SS and high I _on/I _off

, 2023
Vivek Kumar, Ravindra Kumar Maurya, Malvika Malvika, Gopal Rawat, Kavicharan Mummaneni   +4 more
openalex   +1 more source

Plasmonic Nanomachines: Creating Local Potential Gradients and Motions

Advanced Materials, EarlyView.
Plasmonic nanomachines can generate optical, thermal, and chemical potential gradients to drive directional rectilinear, rotational, and twisting motions at the nanometer scale. The integration of multimodal plasmonic forces with functional materials and programmed structural distortions enables precise spatiotemporal actuation, thereby providing a ...
Yoonhee Kim, Soohyun Ji, Donghyun Choi, Jwa‐Min Nam   +3 more
wiley   +1 more source

Highly Efficient Gate Controllability of Rashba Spin-orbit Interaction in a Gate-all-around InAs Nanowire MOSFET [PDF]

, 2019
Keiko Takase, Guoqiang Zhang, Kouta Tateno, Satoshi Sasaki   +3 more
openalex   +1 more source

Backbone Engineering of Carbon‐Centered NHC‐Derived Diradicals: From Electronic State Tuning to High‐Performance Organic Field‐Effect Transistors

Advanced Materials, EarlyView.
The open‐shell nature of diradicals facilitates charge separation, and compounds with moderate diradical character demonstrate remarkable potential in organic field‐effect transistors (OFET) applications due to their low reorganization energies for hole and electron transport.
Xiao‐Xu Liu, Lianghui Li, Xin Li, Can Chen, Man Li, Shun Tian, Paul J. Dyson, Ying‐Feng Han   +7 more
wiley   +1 more source

InP Crystal Phase Heterojunction Transistor with a Vertical Gate-All-Around Structure. [PDF]

ACS Appl Mater Interfaces
Katsumi Y, Gamo H, Motohisa J, Tomioka K.   +3 more
europepmc   +1 more source

Simulation Study on the Scalability of Channel-All-Around Reconfigurable Field-Effect Transistors With Gate-Controlled Polarity

Ran Huo, Shijun Ou, Zhehao Wu, Han Zhang, Bowen Lv, Yvyang Shao, Zichao Ma, Min Zhang, M. Chan, Changjian Zhou   +9 more
openalex   +1 more source