Results 261 to 270 of about 12,503,659 (299)

Research of Gate-All-Around Field-Effect Transistors

Science and Technology of Engineering, Chemistry and Environmental Protection
This report provides an overview of GAA FETs also known as Gate-All-Around FETs, focusing on their introduction and limitations, based on a comprehensive review of current literature and online resources. GAA FETs represent an evolution of FinFET technology, which itself was developed from traditional MOSFET designs. Each iteration has aimed to improve
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Buckling characterization of gate all around silicon nanowires

SPIE Proceedings, 2013
Imaging of suspended silicon nanonwires (SiNW) by SEM reveals that some of the SiNW are buckled. Buckling can impact device performance and it is therefore important to characterize this phenomenon. Measuring the buckling of suspended silicon nanowires (SiNW) poses significant challenges: (1) Small dimensions - SiNW are made with diameters ranging from
Shimon Levi, Ishai Schwarzband, Yakov Weinberg, Roger Cornell, Ofer Adan, Guy M. Cohen, Cheng Cen, Lynne Gignac   +7 more
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An area efficient gate-all-around ring MOSFET

2016 IEEE Silicon Nanoelectronics Workshop (SNW), 2016
This paper proposes an area efficient gate-all-around ring (GAAR) MOSFET structure for vertical integration, which in essence is an arc-shaped double-gate FinFET and gains benefits of the superior gate control in GAA MOSFETs and feasible manufacturability.
Ya-Chi Huang, Meng-Hsueh Chiang, Shui-Jinn Wang   +2 more
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Localized thermal effects in Gate-all-around devices

2023 IEEE International Reliability Physics Symposium (IRPS), 2023
Colin Landon, Lei Jiang, Daniel Pantuso, Inanc Meric, Kam Komeyli, Jeffrey Hicks, Daniel Schroeder   +6 more
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Design optimization of gate-all-around (GAA) MOSFETs

IEEE Transactions on Nanotechnology, 2006
The design of gate-all-around (GAA) MOSFETs was optimized and compared with that of double-gate MOSFETs. We discussed the optimal ratio of the fin width to the gate length and investigated short-channel effects of GAA MOSFETs. Using three-dimensional simulations, we confirmed that short-channel effects were properly suppressed although the fin width ...
null Jae Young Song, null Woo Young Choi, null Ju Hee Park, null Jong Duk Lee, null Byung-Gook Park   +4 more
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Gate-All-Around Silicon Nanowire Transistor Technology

2020
As a promising alternative to the fundamental device structure, the gate-all-around silicon nanowire transistor (GAA SNWT) has been studied extensively for decades. In this chapter, the device physics, compact modeling, and fabrication process of GAA SNWT are systematically reviewed, as well as its potential applications in terms of different ...
Ru Huang, Runsheng Wang, Ming Li
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Gate-All-Around Technology is Coming.

Proceedings of the 2023 International Symposium on Physical Design, 2023
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Fabrication of the SiC Gate-All-Around JFET

IEEE Transactions on Electron Devices, 2023
Masaya Mochizuki, Masayuki Yamamoto, Hitoshi Umezawa, Yasunori Tanaka   +3 more
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The next generation of gate-all-around transistors

Nature Electronics, 2023
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Exploring Power Savings of Gate-All-Around Cryogenic Technology

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
Victor Moroz, Alexei Svizhenko, Munkang Choi, Plamen Asenov, Jaehyun Lee   +4 more
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