Results 71 to 80 of about 12,271 (215)

Investigation of impact of the gate circuitry on IGBT transistor dynamic parameters

Mokslas: Lietuvos Ateitis, 2010
The impact of Insulated Gate Bipolar Transistor driver circuit parameters on the rise and fall time of the collector current and voltage collector-emitter was investigated.
Vytautas Bleizgys, Andrius Platakis
doaj   +1 more source

Solution‐Processed Two‐Dimensional Indium Oxide on Sodium‐Embedded Alumina for Reconfigurable Optoelectronic Synaptic Transistors

Advanced Functional Materials, EarlyView.
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min, Yonghyun Albert Kwon, Hyunbin Kim, Jihyun Kim, Myeongjin Jung, Jaewon Heo, Gwang Ya Kim, Vlastimil Mazanek, Zdeněk Sofer, In Soo Kim, Jeong Ho Cho, Hyesung Park, Sang Min Won, Joohoon Kang   +13 more
wiley   +1 more source

Enhancing Driving Performance of a-Si:H Thin-Film Transistors With Capacitive Coupling Method for Display Applications

IEEE Journal of the Electron Devices Society, 2018
A new capacitive coupling method to enhance the driving performance of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) in high-resolution applications is presented.
Chih-Lung Lin, Fu-Hsing Chen, Jui-Hung Chang, Yu-Sheng Lin   +3 more
doaj   +1 more source

Chiral Phase Change Nanomaterials

Advanced Functional Materials, EarlyView.
This work demonstrates reversible, non‐volatile phase transitions in chiral Ge2${\rm Ge}_2$Sb2${\rm Sb}_2$Te5${\rm Te}_5$ (GST) nanohelices for high‐speed optical modulation of chirality and dynamic control of the state of polarization (SOP). The chiral nanostructures are fabricated using a highly directional, wafer‐scale physical vapor deposition ...
Joshua A. Burrow, Md Shah Alam, Riad Yahiaoui, Evan M. Smith, Ryan Laing, Jules Gardener, Thomas A. Searles, Piyush J. Shah, Shivashankar Vangala, Joshua R. Hendrickson, Andrew M. Sarangan, Imad Agha   +11 more
wiley   +1 more source

A Gate Driver for Crosstalk Suppression of eGaN HEMT Power Devices

Journal of Low Power Electronics and Applications
The eGaN HEMT power devices face serious crosstalk problems when applied to high-frequency bridge circuits, thereby limiting the switching performance of these devices. To address this issue, a gate driver is proposed in this paper that can suppress both
Longsheng Zhang, Kaihong Wang, Shilong Guo, Binxin Zhu   +3 more
doaj   +1 more source

Electro‐Steric Ion Confinement in Polyelectrolyte Networks for Robust Nonvolatile Artificial Synapse

Advanced Functional Materials, EarlyView.
Polyelectrolyte stoichiometry governs ion transport and retention in electrolyte‐gated synaptic transistors. A PSS‐rich network creates electro‐steric ion confinement that suppresses ion back‐diffusion and stabilizes channel doping, enabling robust nonvolatile synaptic memory, linear weight updates, and low‐energy operation.
Donghwa Lee, Jinbo Kim, Myeongjin An, Jisoo Park, Junho Sung, Eunsung Hwang, Suhwan Seok, Seong‐Min Bak, Jeonghun Kim, Eunho Lee   +9 more
wiley   +1 more source

Design and Analysis of New Level Shifter With Gate Driver for Li-Ion Battery Charger in 180nm CMOS Technology

Iranian Journal of Electrical and Electronic Engineering, 2019
In this work, the design and analysis of new Level Shifter with Gate Driver for Li-Ion battery charger is proposed for high speed and low area in 180nm CMOS technology.
M. El Alaoui, F. Farah, K. El Khadiri, H. Qjidaa, A. Aarab, A. Lakhssassi, A. Tahiri   +6 more
doaj  

A gate driver for IGBT with data acquisition function

机车电传动, 2023
The paper presents a new type of gate driver for IGBT, which has the function of acquiring the operation state data in addition to traditional gate drive and short-circuit protection functions.
YANG Lele, CHEN Yanping, DOU Zechun, QI Yu, XIE Shunmeng, WE Haishan   +5 more
doaj  

Solution‐Processed Thin‐Film Transistors With Tunable Temporal Dynamics for Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Solution‐processed CNT and CNT/P3HT ion‐gated transistors exhibit materials‐defined synaptic timescales: fast CNT devices for high‐frequency spiking and slow hybrid devices for temporal integration. Embedding these dynamics into coupled reservoir‐computing and spiking neural network simulations reveals that a Hybrid‐Reservoir / CNT‐SNN architecture ...
Kevin Schnittker, Haoyi Lin, Zahra Bahrami, Strahinja Marinkovic, Sung Hyun Lee, Joseph Andrews   +5 more
wiley   +1 more source

Electrocapillary Modulated Interfacial Tension Amplifies Liquid Metal Transduction

Advanced Functional Materials, EarlyView.
This study presented an electrocapillary‐enhanced magnetohydrodynamic pumping strategy that harnesses the Lorentz force and interfacial tension modulation of liquid metal droplets to achieve amplified fluidic power. The system enabled low‐voltage, self‐oscillating fluidic transduction with enhanced pressure and flow generation, supporting compact ...
Saba Firouznia, Ciqun Xu, Michael D. Dickey, Jonathan Rossiter   +3 more
wiley   +1 more source