Parasitic-Based Active Gate Driver Improving the Turn-On Process of 1.7 kV SiC Power MOSFET
Applied Sciences, 2021 This article discusses an active gate driver for a 1.7 kV/325 A SiC MOSFET module. The main purpose of the driver is to adjust the gate voltage in specified moments to speed up the turn-on cycle and reduce the amount of dissipated energy.
Bartosz Lasek +3 more
doaj +4 more sources
Multi-level active gate driver for SiC MOSFETs [PDF]
2017 IEEE Energy Conversion Congress and Exposition (ECCE), 2017 Active gate driving has been shown to provide reduced circuit losses and improved switching waveform quality in power electronic circuits. An integrated active gate driver with 150 ps resolution has previously been shown to offer the expected benefits in GaN-based converters.
Harry C P Dymond +2 more
exaly +5 more sources
Review of Integrated Gate Driver Circuits in Active Matrix Thin-Film Transistor Display Panels
MicromachinesMany advanced technologies have been employed in high-performance active matrix displays, including liquid crystal displays, organic light-emitting diode displays, and micro-light-emitting diode displays.
Min-Kyu Chang +3 more
doaj +4 more sources
A four‐step control for IGBT switching improvement using an active voltage gate driver
IET Power Electronics, 2022 Gate drivers form an essential interface between the high power transistors and low voltage control circuits in power converters to govern the transistor switching operations and maintain other ancillary functions.
Chen Li +5 more
doaj +3 more sources
Region-segmented gate driver for mitigating RC delay in large-area automotive OLED displays [PDF]
Scientific ReportsLarge-area active-matrix panels suffer from timing distortion caused by resistive–capacitive (RC) accumulation along extended signal lines. To minimize signal propagation length and reduce accumulated RC loading, a distributed gate-driving architecture ...
Dahye Shim +7 more
doaj +2 more sources
A Six Level Gate-Driver Topology with 2.5 ns Resolution for Silicon Carbide MOSFET Active Gate Drive Development [PDF]
2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia), 2021 This paper presents a new high-bandwidth multilevel gate-drive topology for use in Silicon Carbide (SiC) Active Gate-Driver Development. The presented Modular Multilevel gate Driver (MMGD) is a voltage modulated gate-driver topology that has a resolution of 2.5 ns and a current source/sink ability of approximately 5A, allowing for driving of high-power
Judge, Paul Daniel; id_orcid 0000-0002-0926-6804 +2 more
openaire +3 more sources
Design of a SiC MOSFET Gate Driver Chip Based on Adaptive Active Drive Technology [PDF]
MicromachinesSilicon carbide (SiC) MOSFETs are promising for high-efficiency, high-power-density power conversion owing to their high breakdown capability, fast switching speeds, and low switching losses. However, parasitic parameters can cause severe voltage/current
Qidong Li +8 more
doaj +2 more sources
A Novel Active Gate Driver for Improving SiC MOSFET Switching Trajectory [PDF]
IEEE Transactions on Industrial Electronics, 2017 The trend in power electronic applications is to reach higher power density and higher efficiency. Currently, the wide band-gap devices such as silicon carbide MOSFET (SiC MOSFET) are of great interest because they can work at higher switching frequency with low losses.
Alejandro Paredes-Camacho +2 more
exaly +4 more sources
Active gate driver for dv/dt control and active voltage clamping in an IGBT stack [PDF]
2005 European Conference on Power Electronics and Applications, 2005 For high voltages converters stacks of IGBTs can be used if the static and dynamic voltage sharing among the IGBTs can be applied. dV CE/dt should also be controlled in order not to damage insulation material. This paper describes theory and measurements of an active gate driver for stacking IGBTs.
Rasmussen, Tonny Wederberg +1 more
openaire +3 more sources
Series Capacitance Gate Driver to Suppress Voltage Oscillation of SiC MOSFET
IEEE Journal of the Electron Devices SocietyThe severe voltage oscillation of SiC MOSFET in switching transient affects the safety of devices and EMI. In this article, a series capacitance gate driver (SCGD) is proposed to solve this problem.
Sheng Dou +7 more
doaj +2 more sources