Results 41 to 50 of about 7,509 (291)

Interpreting the effects of DNA polymerase variants at the structural level

open access: yesMolecular Oncology, EarlyView.
Using MAVISp and molecular dynamics simulations, we analyzed over 60 000 missense variants in POLE and POLD1 from ClinVar, COSMIC, cBioPortal, and saturation mutagenesis. Identified mechanistic indicators, including stability, binding, and long‐range, enable structural interpretation, providing ACMG‐like evidence for possible reclassification of VUS ...
Matteo Arnaudi   +7 more
wiley   +1 more source

Use of an NSGA-II Genetic Algorithm and Active Gate Driving to Improve Simulated GaN Power Electronic Switching Waveforms [PDF]

open access: yes, 2022
This paper investigates the use of Evolutionary Multi-objective Optimization (EMO) algorithms to automatically optimise active gate driver patterns for hard-switched GaN bridge-legs.
Jahdi, Saeed   +3 more
core   +1 more source

CMOS Active Gate Driver for Closed-Loop d v /d t Control of GaN Transistors

open access: yes, 2020
International audienceThis paper shows both theoretical and experimental analyses of a fully integrated CMOS active gate driver (AGD) developed to control the high dv/dt of GaN transistors for both 48 V and 400 V applications.
Cougo, Bernardo   +4 more
core   +2 more sources

MITF maintains genome stability in nonmelanocyte lineages

open access: yesMolecular Oncology, EarlyView.
MITF is essential for melanocyte survival and acts as an oncogene in 10%–20% of melanomas. We show that MITF depletion causes genome instability in nonmelanocytic cells, leading to LATS2‐mediated P53 activation, cell cycle arrest, and apoptosis. This study highlights the role of MITF as a genome maintenance factor beyond the melanocyte lineage. Created
Drifa H. Gudmundsdottir   +13 more
wiley   +1 more source

Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer

open access: yesMicromachines, 2023
In this work, we demonstrated the thermal analysis of different flip-chip bonding designs for high power GaN HEMT developed for power electronics applications, such as power converters or photonic driver applications, with large gate periphery and chip ...
Kuo-Bin Hong   +7 more
doaj   +1 more source

GaN HEMT Gate Driver Circuit Utilizing Variable Capacitors [PDF]

open access: yes
Active gate drivers promise lowered switching energies, decreased over-voltages, and improved system EMI. Controllability of gate charging process in available active drivers is limited by discrete, multi-step changes in voltage and gate resistance, or ...
Beczkowski, Szymon; id_orcid   +4 more
core   +1 more source

Sequence Prediction for SiC MOSFET Active Gate Driving With a Recurrent Neural Network

open access: yesIEEE Open Journal of Industry Applications, 2023
This article develops a recurrent neural network (RNN) with an encoder–decoder structure to predict the driving sequence of SiC MOSFET active gate drivers (AGDs).
Li Yang   +3 more
doaj   +1 more source

ZW4864‐mediated inhibition of the β‐catenin/BCL9/BCL9L complex reveals therapeutic potential in bladder cancer

open access: yesMolecular Oncology, EarlyView.
BCL9 and BCL9L drive bladder cancer progression by enhancing β‐catenin signaling, promoting proliferation, migration, invasion, and organoid growth. Genetic depletion of BCL9(L) suppresses malignant phenotypes, while pharmacological disruption of the β‐catenin/BCL9(L) complex with ZW4864 inhibits canonical Wnt signaling and tumor‐associated cellular ...
Roland Kotolloshi   +11 more
wiley   +1 more source

Building blocks for future dual-channel GaN gate drivers Arbitrary waveform driver, bootstrap voltage supply, and level shifter [PDF]

open access: yes, 2019
Capitalising on the high-speed switching capability of 650 V GaN FETs in power-electronic bridgelegs is challenging. Whilst active gate driving has previously been shown to help overcome adverse switching behaviour, the best results are likely to be ...
Liu, Dawei   +3 more
core   +2 more sources

Status and Trend of IGBT Gate Drive Technology

open access: yesKongzhi Yu Xinxi Jishu, 2015
In this paper, the new requirements to gate drivers caused by IGBT were analysed as well as the IGBT operating characteristics. Moreover, through the analysis of typical products from the vendors of the mainstream gate driver, the status and the trend of
JIAO Mingliang   +4 more
doaj  

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