Results 21 to 30 of about 7,509 (291)
Realization of an IGBT Gate Driver With Dualphase Turn-On/Off Gate Control
IEEE Journal of the Electron Devices Society, 2020 Adding passive components in a conventional IGBT gate driver is a simple method to reduce transient current/voltage spikes during switching, but the extra devices and power loss make them less attractive.
You-Da Chen, Albert Chin
doaj +1 more source
Prediction Method of Driving Strategy of High-Power IGBT Module Based on MEA-BP Neural Network
IEEE Access, 2020 An insulated gate bipolar transistor (IGBT) driver is crucial for improving the reliability of a power electronics system. This paper proposes a method for predicting the optimal driving strategy of high-power IGBT module based on backpropagation neural ...
Zhaoliang Meng +10 more
doaj +1 more source
Energy Reports, 2023 Because of the benefits of lower on-state resistance, higher operating voltage, and higher switching frequency, SiC-MOSFET has gradually become an ideal choice for the development of power converters operating in high voltage, temperature, and power ...
Zheng Chen +3 more
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Four-Channel Buck-Type LED Driver with Automatic Current Sharing and Soft Switching
Applied Sciences, 2022 A buck-type LED driver together with automatic current sharing and high step-down voltage conversion ratio but without complex control is proposed. The proposed LED driver can not only achieve zero voltage switching (ZVS) turn-on by adding only one ...
Wen-Zhuang Jiang +2 more
doaj +1 more source
IEEE Open Journal of Power Electronics, 2021 The voltage rating of the commercial Gallium Nitride (GaN) power devices are limited to 600/650 V due to the lateral structure. Stacking the low-voltage rating devices is a straightforward approach to block higher dc link voltage. However, the unbalanced
Zhengda Zhang +5 more
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Experimental Investigations on the Tuning of Active Gate Drivers under Load Current Variations [PDF]
2021 International Conference on Applied Electronics (AE), 2021 Active Gate Drivers have gained of interest as they allow one to shape the switching waveforms finely, thus reducing overshoots and oscillations. However, when fast power switches are exploited, the tuning of such drivers is still challenging. This paper investigates the adjustment of gate current profile under load variations, which is a crucial issue
Raviola E., Fiori F.
openaire +2 more sources
Active Gate Driver And Switching Characterisation For High-Power IGBT Modules
, 2021 In modern power electronic systems, the Insulated Gate Bipolar Transistor (IGBT) power modules are the main workhorse and play a more and more important role.
Kun Tan (755070)
core +1 more source
A New Gate Driver for Suppressing Crosstalk of SiC MOSFET
, 2022 High switching-speed Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor (SiC MOSFET) has serious crosstalk issues. During the turn-ON transition and turn-OFF transition of the active switch in a phase-leg configuration, the voltage drops ...
Yuzhe Jiao +4 more
core +1 more source
An improved gate driver for power MOSFETs using a cascode configuration
, 2014 To overcome the limitations of existing gate drive topologies an improved gate drive concept is proposed to provide fast, controlled switching of power MOSFETs. The proposed topology exploits the cascode configuration with the inclusion of an active gate
Broadmeadow, Mark +5 more
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Power Electronics and Drives, 2018 This paper presents the results of experimental research of a resonant switched capacitor voltage multiplier in a cost-effective topology (CESCVM) with a limited number of active switches.
Waradzyn Zbigniew +4 more
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