Results 11 to 20 of about 7,509 (291)
IEEE Open Journal of Power Electronics, 2021 The voltage rating of commercial Gallium Nitride (GaN) power semiconductors is limited to 600/650 V because of the lateral structure. Stacking low-voltage switches is an effective way to block higher dc-link voltage.
Zhengda Zhang +5 more
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A Closed-Loop Active Gate Driver of SiC MOSFET for Voltage Spike Suppression
IEEE Open Journal of Power Electronics, 2022 The development trend of power converter is high frequency, high efficiency and high-power density. Compared with silicon-based power devices, SiC MOSFET has been widely used because of its fast-switching speed, low switching loss and high operating ...
Zongqiu Gao +4 more
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IET Power Electronics, 2023 This paper experimentally validates a fully digitalized active gate driver for suppressing the switching surge voltage of SiC MOSFETs in a boost converter.
Shuhei Fukunaga +2 more
doaj +1 more source
IEEE Access, 2021 Because SiC MOSFET-based zero-voltage switching (ZVS) power converter circuits provide high-speed switching, high power density and high efficiency can be achieved.
Gi-Young Lee +3 more
doaj +1 more source
Four Level Voltage Active Gate Driver for Loss and Slope Control in SiC MOSFETs [PDF]
, 2022 Silicon Carbide power semiconductors exhibit fast dynamic behavior. This facilitates the design of high efficiency and high power density converters.
Rødal, Gard Lyng +3 more
core +1 more source
An Isolated Gate Driver for Multi-Active Bridges with Soft Switching
CoRR, 2022 The design of gate drivers is an important topic in power converter topologies that can help reduce switching losses and increase power density. Gate driving techniques that offer zero-voltage switching and/or zero current switching have recently been successfully proposed for different modular multilevel converters such as the cascaded H bridge ...
Ferdinand Grimm +4 more
openaire +2 more sources
IET Power Electronics, 2022 In the fabrication of some high‐voltage low‐power applications, low cost is much concerned, and thus using silicon carbide (SiC) MOSFET stack consisting of series connected low‐voltage devices is preferred rather than using an expensive single high ...
Rui Wang +2 more
doaj +1 more source
An experimental study on switching waveform design with gate charge control for power MOSFETs
Power Electronic Devices and Components, 2023 Designing switching waveforms is a technique for mitigating a trade-off between loss and noise in switching power devices. A novel and simple method has been proposed to compute the gate waveform to realize a designed switching waveform. The gate current
Hirotaka Oomori, Ichiro Omura
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Switching waveform design with gate charge control for power MOSFETs
Power Electronic Devices and Components, 2022 The switching waveform design, especially controlling and optimizing the slew rate, is an efficient technique to mitigate the trade-off between decreasing the loss and increasing the noise of the switching power device.
Hirotaka Oomori, Ichiro Omura
doaj +1 more source
Low Inductive Characterization of Fast-Switching SiC MOSFETs and Active Gate Driver Units
, 2023 Accurate switching device characterization is necessary for effectively utilizing the technological advantages of Silicon Carbide (SiC) Power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) over their Silicon (Si) Insulated-Gate Bipolar ...
Dimosthenis Peftitsis +9 more
core +2 more sources