Results 61 to 70 of about 7,509 (291)

Epilepsy‐Associated Variants of a Single SCN1A Codon Exhibit Divergent Functional Properties

Annals of Clinical and Translational Neurology, EarlyView.
ABSTRACT Objective Pathogenic variants in SCN1A, which encodes the voltage‐gated sodium channel NaV1.1, are associated with multiple epilepsy syndromes exhibiting a range of clinical severity. SCN1A variants are reported in different syndromes, including Dravet syndrome, which is associated with loss‐of‐function, whereas neonatal/infantile‐onset ...
Lanie N. Liebovitz, Christopher H. Thompson, Linda C. Laux, Alfred L. George Jr.   +3 more
wiley   +1 more source

Sub-nanosecond delay CMOS Active Gate Driver for Closed-Loop dv/dt Control of GaN Transistors

, 2019
International audienceThis paper presents an AGD (active gate driver) implemented with a low voltage CMOS technology to control the dv/dt sequence of low voltage (100V) and high voltage (650V) GaN power transistors. Such an AGD can control and reduce the
Cogo, Bernardo, Vinnac, Sébastien, Plinio, Bau, Rouger, Nicolas,, Richardeau, Frédéric, Cousineau, Marc, Flumian, Didier, Rouger, Nicolas, C., Sébastien, Vinnac   +8 more
core   +1 more source

Gate driver for the active thermal control of a DC/DC GaN-based converter [PDF]

, 2016
Wide-Band-Gap power semiconductors based on SiC and GaN offer some significant advantages compared to Si-devices, in particular higher switching speed and higher operating temperature. These features offer potentially increased power density, which makes
Giampaolo Buticchi, Buticchi, Giampaolo, Marco Liserre, Kumar Prasobhu, Pramod, Brueske, Stephan, Liserre, Marco, Pramod Kumar Prasobhu, Stephan Brueske   +7 more
core   +1 more source

Additive Manufacturing of Continuous Fibre Reinforced Composites: Process, Characterisation, Modelling, and Sustainability

Advanced Engineering Materials, EarlyView.
Additive manufacturing provides precise control over the placement of continuous fibres within polymer matrices, enabling customised mechanical performance in composite components. This article explores processing strategies, mechanical testing, and modelling approaches for additive manufactured continuous fibre‐reinforced composites.
Cherian Thomas, Amir Hosein Sakhaei
wiley   +1 more source

Smart Gate Driver ICs for GaN Power Transistors

, 2019
GaN power transistors are well suited in high frequency, high temperature and high power-density applications. This paper investigates different gate driver designs for GaN power transistors, including fundamental driving concerns, current commercial ...
Tungng, Wai, Wei Jia Zhang, Zhang, Wei Jia, Wai TungNg, Yu, Jingshu, Jingshu Yu   +5 more
core   +1 more source

Design of a Novel Active Gate Drive Circuit to Enhance Current Sharing in Parallel-Connected MOSFETs for Low-Voltage Inverter Applications

IEEE Access
Low-voltage systems offer advantages in terms of safety, cost-effectiveness, and ease of integration, making them a preferred choice for e-scooters, light electric vehicles (LEVs), and various small-scale and urban mobility applications.
Berkay Keziban, Murat Yilmaz
doaj   +1 more source

An FPGA-Based Neuro-Fuzzy Sensor for Personalized Driving Assistance

Sensors, 2019
Advanced driving-assistance systems (ADAS) are intended to automatize driver tasks, as well as improve driving and vehicle safety. This work proposes an intelligent neuro-fuzzy sensor for driving style (DS) recognition, suitable for ADAS enhancement. The
Óscar Mata-Carballeira, Jon Gutiérrez-Zaballa, Inés del Campo, Victoria Martínez   +3 more
doaj   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source