Results 131 to 140 of about 276,884 (303)

The cytosolic GH loop regulates the phosphatidylinositol 4,5-bisphosphate-induced gating kinetics of Kir2 channels

, 2012
Inwardly rectifying K+ (Kir) channels set the resting membrane potential and regulate cellular excitability. The activity of Kir channels depends critically on the phospholipid PIP2.
Logothetis DE, An HL, Cui M, Long M(龙勉), Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Natl Micrograv Lab, Beijing 100190, Peoples R China., Meng XY, Lv SQ(吕守芹), Long, M, Zhang HL, Li JW, Zhan Y   +10 more
core   +1 more source

Binary‐to‐Ternary Reconfigurable Transistors Using Plasma‐Assisted MoS2

Advanced Functional Materials, EarlyView.
A binary‐to‐ternary reconfigurable transistor is demonstrated using a dual‐gated molybdenum disulfide homojunction with localized O2 plasma treatment. The device exhibits on/intermediate and intermediate/off current ratios of 102 and 104, respectively, and the intermediate state is electrically tunable in the ternary mode.
Yeonghyeon Ko, Jungi Song, Minsu Kim, Yongwook Seok, Seongje Moon, Kenji Watanabe, Takashi Taniguchi, Kayoung Lee   +7 more
wiley   +1 more source

Light‐Induced Field‐Tunneling Synapses in Solution‐Processed Van Der Waals Heterostructures for Scalable, Retina‐Inspired Optical Sensing

Advanced Functional Materials, EarlyView.
A scalable, solution‐processed WSe2/ZrO2‐x van der Waals heterostructure realizes a light‐induced field‐tunneling synapse (LIFTS) that activates exclusively under bright illumination, emulating the photopic adaptation of the human retina at the device level.
Kijeong Nam, Jihyun Kim, Soobeen Ji, In Soo Kim, Sejin Kim, Eungseon Yeon, Do Kyung Hwang, Iva Plutnarová, Zdeněk Sofer, Sang Min Won, Joohoon Kang   +10 more
wiley   +1 more source

Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing

Advanced Functional Materials, EarlyView.
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin, Eunjoo Yoo, Ki‐Hoon Son, Hyun‐Sik Kim, Dae‐Hee Han, Jeong Hyeon Son, Seung Hwan Lee, Hong‐Sub Lee   +7 more
wiley   +1 more source

Confinement‐Engineered Thermally Programmed Ion‐Gating Separator for Decoupling Thermal–Electrochemical Feedback in High‐Energy Lithium‐Ion Batteries

Advanced Functional Materials, EarlyView.
A new phase‐change material encapsulated membrane offers more thermal resilience stability and safety than the conventional separators for batteries. ABSTRACT Thermal runaway in lithium‐ion batteries arises from the intrinsic coupling between heat generation and ion transport, yet conventional shutdown separators primarily rely on passive pore collapse
Sumedha Rajpoot, Wei‐Nien Su, Sheng‐Chiang Yang, Yu Chun Huang, Wahyu Fiqih Virdiansyah, Ashok Ranjan, Han‐Hsuan Hsieh, Chia‐Lung Hsieh, Yu‐Wei Li, Yosef Nikodimos, Zabish Bilew Muche, Yu Jen Liang, Chia‐Chi Wang, Chih‐Ching Liu, Gao‐Jhih Liang, Chun‐Chen Yang, She‐Huang Wu, Bing Joe Hwang   +17 more
wiley   +1 more source

Disorder‐Broadened Topological Hall Phase and Anomalous Hall Scaling in FeGe

Advanced Functional Materials, EarlyView.
By systematically introducing defects into FeGe via ion‐beam modification, we demonstrate that disorder broadens the temperature regime over which the topological Hall effect ‐ a signature of skyrmions or other chiral textures — appears, while also increasing its magnitude.
Chaman Gupta, Chris Matsumura, Hongbin Yang, Sarah Edwards, Rebeca M. Gurrola, Jiun‐Haw Chu, Hanjong Paik, Yongqiang Wang, David A. Muller, Robert Streubel, Tzu‐Ming Lu, Serena Eley   +11 more
wiley   +1 more source

Discovery of Energy‐Localized Trap States via Opto‐Electrical Spectroscopy in UWBG Perovskite La:SrSnO3 FETs

Advanced Functional Materials, EarlyView.
Combined UV–vis transmittance and wavelength‐dependent photo‐assisted DC I–V analyses reveal defect‐induced optical instability and a high density of deep donor‐like subgap traps in La‐doped SrSnO3. The resulting MOSFET achieves one of the highest on/off ratios reported for ABO3 perovskite devices, demonstrating the promise of stannate perovskites as ...
Sojin Jung, Junghyun Koo, Hongseung Lee, Donghwan Kim, Dongho Won, Weideng Sun, Jaewook Yoo, Minah Park, Seohyeon Park, Seongbin Lim, Joonsung Lee, Sungjune Park, Sangmoon Yoon, Tae Wan Kim, Bharat Jalan, Gang Qiu, Kiyoung Lee, Hagyoul Bae   +17 more
wiley   +1 more source

Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

Advanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan, Hocheon Yoo, Benoît H. Lessard, Ioannis Kymissis, Chang‐Hyun Kim   +4 more
wiley   +1 more source

Radar Instrument Calibration of TerraSAR-X [PDF]

, 2008
TerraSAR-X is a high resolution synthetic aperture radar (SAR) satellite launched in 2007. Its active phased array X-Band antenna hosts 384 transmit/receive modules (TRMs) controlling the beam steering in azimuth and eleva-tion.
Benjamin Bräutigam, Hueso González, Jaime, Markus Bachmann, Jaime Hueso González, Schwerdt, Marco, Bachmann, Markus, Bräutigam, Benjamin, Marco Schwerdt   +7 more
core  

Multi‐Level Saturation Current Encoding in Two‐Dimensional Ferroelectric Source‐Gated Transistors

Advanced Functional Materials, EarlyView.
A 2D ferroelectric source‐gated transistor (SGT) operates with a non‐volatile, multi‐level saturation current controlled by ferroelectric polarization. Operando electrostatic and photocurrent imaging link the current limitation to source‐side depletion, identifying saturation current as a programmable, read‐bias‐tolerant device parameter toward low ...
Joon‐Seok Kim, Ting‐Ching Chu, Zhehao Zhu, Lincoln J. Lauhon   +3 more
wiley   +1 more source