Results 231 to 240 of about 530,571 (254)
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Multi-Gb/s operation of flipped chip MVTL circuits
IEEE Transactions on Appiled Superconductivity, 1997Development of a reliable flipped chip mounting technique enables demonstration of high speed, complex digital circuits. Flip chip mounting has greatly reduced parasitic inductance compared to conventional wire bonding, and permits remounting of known good die onto multi-chip modules.
B.J. Dalrymple +5 more
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A transimpedance APD optical receiver operating at 10 Gb/s
IEEE Photonics Technology Letters, 1992The authors report an optical receiver which uses a separate-absorption-and-multiplication avalanche photodiode (SAM-APD) to achieve high sensitivity at a bit rate of 10 Gb/s. A transimpedance front end incorporating HEMT devices is used for high bandwidth and low noise.
A.H. Gnauck, C.A. Burrus, D.T. Ekholm
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Operating a zero-carbon GB power system: implications for Scotland
2020In recent history, the British electricity sector landscape has changed as more renewables, particularly solar and wind, are connected to the power system. Since 2004, electricity generated from renewables in the UK has increased tenfold, and in 2019 37.1% of total electricity generated was from renewable sources.
Nedd, Marcel +6 more
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Performance Improvement of Low-Cost 2.5-Gb/s Rated DML Sources Operated at 10 Gb/s
IEEE Photonics Technology Letters, 2008The transmission performance improvement of low-cost conventional directly modulated laser (DML) sources, fabricated for operation at 2.5 Gb/s but modulated at 10 Gb/s is presented and experimentally demonstrated. Performance improvement is achieved by electronic feed-forward and decision-feedback equalization as well as offset optical filtering at the
I. Papagiannakis +4 more
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100-Gb/s Multiplexing and Demultiplexing IC Operations in InP HEMT Technology
IEEE Journal of Solid-State Circuits, 2004This paper describes the 100-Gb/s multiplexing operation of a selector IC and demultiplexing operation of a D-type flip-flop (D-FF) using production-level 0.1-/spl mu/m-gate-length InP HEMT IC technology. To boost the operating speed of the selector IC, a selector core circuit directly drives an external 50-/spl Omega/ load, and is included in the ...
Koichi Murata +5 more
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Monolithic multistage optical switch operating at 160 Gb/s line rate
CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference, 2009A four input, four output multi-stage optoelectronic switching circuit is implemented on an active-passive regrown InGaAsP/InP epitaxial wafer. The circuit incorporates shallow low-loss waveguides and waveguide crossings in combination with deeply-etched low-radius (0.1 mm) waveguide bends and multimode interference couplers to enable very high density
Albores-Mejia A. +12 more
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Five Gb/s operation of a 50-channel optical interconnect
Optical Engineering, 1992The architecture and experimental demonstration of a novel optical time-division multiple-access (TDMA) interconnect is presented in detail. Optical multiplexing and synchronization is used to overcome the electronic multiple-access bottlenecks associated with gigahertz-bandwidth multiprocessor communication systems.
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10-Gb/s Operation of RSOA Using a Delay Interferometer
IEEE Photonics Technology Letters, 2010We report on the use of a delay interferometer (DI) to transmit 10-Gb/s optical signals from a 1.5-GHz-bandwidth reflective semiconductor optical amplifier (RSOA). The DI acts as a two-tap optical equalizer, compensating for the severe bandwidth limitation imposed by the RSOA.
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