Rational Design of Nanostructured Porous and Advanced Getter Materials for Vacuum Insulation Panels. [PDF]
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Total-area world-record efficiency of 27.03% for 350.0 cm<sup>2</sup> commercial-sized single-junction silicon solar cells. [PDF]
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Room-temperature high-purity single-photon emission from carbon-doped boron nitride thin films. [PDF]
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Taming Prolonged Ionic Drift-Diffusion Dynamics for Brain-Inspired Computation. [PDF]
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A radiometric timescale challenges the chronology of the iconic 1992 Guliya ice core. [PDF]
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Phosphorus gettering and intrinsic gettering of nickel in silicon
Applied Physics Letters, 1984High resolution electron microscopy has been used to study the microstructural changes brought about by phoshorus gettering and intrinsic gettering of Ni in Si. Phosphorus gettering proceeds by the formation of SiP particles at the Si/phosphosilicate glass interface, which emit a large concentration of Si interstitials and result in the gettering of Ni
A Ourmazd, Ourmazd A, Schröter W
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AbstractThis paper reviews the basis for phenomenological path for gettering: release, diffusionand capture in the context of old and new developments. More recent precipitation studies in silicon are now recognized to involve complex interactive effects.
T. F. Seidel
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Impurity Gettering by Silicon Nitride Films: Kinetics, Mechanisms, and Simulation
Metallic impurities in the silicon wafer bulk are one of the major efficiency-limiting factors in silicon solar cells. Gettering can be used to significantly lower the metal concentrations. Although gettering by silicon nitride films has been reported in
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