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Getters and gettering in plasma display panels

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1998
In this article, starting from a calculation of the internal conductance inside AC and DC plasma display panels (PDPs), a simple theoretical model is used to estimate the pressure evolution inside a display during the exhausting process and the lifetime.
R. M. Caloi, C. Carretti
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Study of Gettering Mechanisms in Silicon: Competitive Gettering between Phosphorus Diffusion Gettering and Other Gettering Sites

Solid State Phenomena, 2007
The effectiveness of phosphorus diffusion gettering (PDG) and related segregation coefficients for different metal impurities were measured applying thermal treatments in the temperature range 800-950 °C for different times. We used multi-crystalline and mono-crystalline CZ p-type wafers with different boron concentrations and different levels of ...
Mohammad B. Shabani   +2 more
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Getters and Gettering

Japanese Journal of Applied Physics, 1974
The principal modern getter devices characteristic of each of the two main getter families, i.e. flash and bulk, are established and briefly illustrated. The essential physico-chemical processes involved in the gettering mechanism are reviewed to establish the essence of the gettering process. The main design and technical requirements of modern getter
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A Study of the Gettering Characteristics of Getter Pumps for Different Gases

Instruments and Experimental Techniques, 2020
The gettering characteristics of Ti–Zr–Al getter pumps with internal and external heaters have been measured for Н2 and CO. The results are compared to the measured similar characteristics of an NEX‑Torr D 100-05 combined pump from SAES Getters and a titanium sublimation film at temperatures of 300 and 77 K.
V. V. Anashin   +2 more
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The study on gettering mechanism of double-gettering technique

Chinese Physics Letters, 1987
The applications of double-gettering technique (DGT) for silicon single crystal indicate its strong gettering effectiveness. By using E-center model, the minimum concentration of phosphorus, gettering process and the continuous gettering ability were investigated.
Mai Zhenhong   +4 more
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Gettering and Gettering Stability of Metals at Oxide Particles in Silicon

MRS Proceedings, 1992
ABSTRACTSeveral aspects of metal gettering at internal oxide particle sites in Cz Si have been studied by ‘haze tests’, scanning infra-red microscopy (SIRM) and transmission electron microscopy (TEM). Haze tests indicated that complete gettering of Cu, Ni, Co and Pd can occur even when the amount of oxygen precipitated is below the detectable limit ...
R. Falster   +4 more
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Defect characterization and gettering effect in excimer laser gettering

Electronics and Communications in Japan (Part II: Electronics), 1990
AbstractThe mechanism and effect of a new extrinsic gettering method utilizing excimer laser irradiation called excimer laser gettering (ELG) was examined by transmission electron microscopy (TEM) observation and measurements of the electric properties of metal‐oxide‐semiconductor (MOS) capacitors.
Akira Sakai   +5 more
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Getters and Getter Processes

1959
Various gettering materials are used to shorten the exhaust process, to improve or maintain the vacuum in sealed-off tubes or to maintain the purity of rare gases in gas-filled tubes. In the simplest case, large, particularly porous surface areas of glass or carbon cooled much below room temperature, may be used.
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Multicomponent Getter Films for Getter-Ion Pumps

Journal of Vacuum Science and Technology, 1969
Since the first commercial application of getter-ion pumping, a single metal, such as titanium, has usually been employed for this purpose. However, data obtained several years ago for bulk gettering, i.e., volume absorption of gases by heated materials, showed considerable increases in gettering rates for certain binary alloy compositions over the ...
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Gettering in silicon

Journal of Applied Physics, 1989
A series of gettering experiments have been carried out for a better understanding of gettering mechanism(s) in silicon. We find that oxidation and oxynitridation, which are known to inject silicon interstitials, do not getter metallic impurities such as Au, Cu, Fe, and Ni while phosphorus (P) diffusion does produce effective gettering of these metals.
J. S. Kang, D. K. Schroder
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