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Mechanisms of transition-metal gettering in silicon [PDF]

Journal of Applied Physics, 2000
The atomic process, kinetics, and equilibrium thermodynamics underlying the gettering of transition-metal impurities in Si are reviewed from a mechanistic perspective. Methods for mathematical modeling of gettering are reviewed and illustrated. Needs for
S M Myers, M Seibt, Myers S M
exaly   +2 more sources

Gettering of Iron in Silicon Solar Cells With Implanted Emitters [PDF]

IEEE Journal of Photovoltaics, 2014
We present here experimental results on the gettering of iron in Czochralski-grown silicon by phosphorus implantation. The gettering efficiency and the gettering mechanisms in a high resistivity implanted emitter are determined as a function of both ...
Ville Vähänissi, Antti Haarahiltunen, Hele Savin   +2 more
exaly   +2 more sources

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An updated review of getters and gettering

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1985
A brief review of present day getter materials is made with reference to the two principal families, i.e., evaporable and nonevaporable getters. The main physicochemical processes involved in the gettering process are reviewed in order to establish the concept of gettering-selective chemical pumping.
T. A. Giorgi, B. Ferrario, B. Storey
openaire   +1 more source

Cesium gettering by graphite-improvement in the gettering efficiency

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 1990
Results of experimental investigations of the cesium (Cs) gettering properties of graphite at various temperatures are reported. Possible reasons for this behavior are discussed. A model based on the grain boundary and surface diffusion of Cs in graphite is used to explain the results.
N D, Bhaskar, C M, Kahla
openaire   +2 more sources

Getters and gettering in plasma display panels

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1998
In this article, starting from a calculation of the internal conductance inside AC and DC plasma display panels (PDPs), a simple theoretical model is used to estimate the pressure evolution inside a display during the exhausting process and the lifetime.
R. M. Caloi, C. Carretti
openaire   +1 more source

Study of Gettering Mechanisms in Silicon: Competitive Gettering between Phosphorus Diffusion Gettering and Other Gettering Sites

Solid State Phenomena, 2007
The effectiveness of phosphorus diffusion gettering (PDG) and related segregation coefficients for different metal impurities were measured applying thermal treatments in the temperature range 800-950 °C for different times. We used multi-crystalline and mono-crystalline CZ p-type wafers with different boron concentrations and different levels of ...
Mohammad B. Shabani, T. Yamashita, E. Morita   +2 more
openaire   +1 more source

Getters and Gettering

Japanese Journal of Applied Physics, 1974
The principal modern getter devices characteristic of each of the two main getter families, i.e. flash and bulk, are established and briefly illustrated. The essential physico-chemical processes involved in the gettering mechanism are reviewed to establish the essence of the gettering process. The main design and technical requirements of modern getter
openaire   +1 more source

A Study of the Gettering Characteristics of Getter Pumps for Different Gases

Instruments and Experimental Techniques, 2020
The gettering characteristics of Ti–Zr–Al getter pumps with internal and external heaters have been measured for Н2 and CO. The results are compared to the measured similar characteristics of an NEX‑Torr D 100-05 combined pump from SAES Getters and a titanium sublimation film at temperatures of 300 and 77 K.
V. V. Anashin, A. A. Krasnov, A. M. Semenov   +2 more
openaire   +1 more source

The study on gettering mechanism of double-gettering technique

Chinese Physics Letters, 1987
The applications of double-gettering technique (DGT) for silicon single crystal indicate its strong gettering effectiveness. By using E-center model, the minimum concentration of phosphorus, gettering process and the continuous gettering ability were investigated.
Mai Zhenhong, Dai Daoyang, Zhou Shiren, Ye Yizheng, Ye Shuichi   +4 more
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Gettering and Gettering Stability of Metals at Oxide Particles in Silicon

MRS Proceedings, 1992
ABSTRACTSeveral aspects of metal gettering at internal oxide particle sites in Cz Si have been studied by ‘haze tests’, scanning infra-red microscopy (SIRM) and transmission electron microscopy (TEM). Haze tests indicated that complete gettering of Cu, Ni, Co and Pd can occur even when the amount of oxygen precipitated is below the detectable limit ...
R. Falster, Z. Laczik, G. R. Booker, A. R. Bhatti, P. Török   +4 more
openaire   +1 more source