Experimental Comparison between Event and Global Shutter Cameras [PDF]
Sensors, 2021 We compare event-cameras with fast (global shutter) frame-cameras experimentally, asking: “What is the application domain, in which an event-camera surpasses a fast frame-camera?” Surprisingly, finding the answer has been difficult.
Ondřej Holešovský +3 more
doaj +4 more sources
A 0.5 MP, 3D-Stacked, Voltage-Domain Global Shutter Image Sensor with NIR QE Enhancement, Event Detection Modes, and 90 dB Dynamic Range [PDF]
Sensors, 2023 We introduce a compact voltage-domain global shutter CMOS image sensor for a wide range of applications including consumer, IoT, and industrial applications. With 0.5 MP and 2.79 µm pixels packed in a die size of only 2.3 mm × 2.8 mm, the sensor achieves
Adi Xhakoni
doaj +2 more sources
A High-Performance 2.5 μm Charge Domain Global Shutter Pixel and Near Infrared Enhancement with Light Pipe Technology [PDF]
Sensors, 2020 We developed a new 2.5 μm global shutter (GS) pixel using a 65 nm process with an advanced light pipe (LP) structure. This is the world’s smallest charge domain GS pixel reported so far.
Ikuo Mizuno +7 more
doaj +2 more sources
A Stacked Back Side-Illuminated Voltage Domain Global Shutter CMOS Image Sensor with a 4.0 μm Multiple Gain Readout Pixel [PDF]
Sensors, 2020 A backside-illuminated complementary metal-oxide-semiconductor (CMOS) image sensor with 4.0 μm voltage domain global shutter (GS) pixels has been fabricated in a 45 nm/65 nm stacked CMOS process as a proof-of-concept vehicle.
Ken Miyauchi +9 more
doaj +2 more sources
Operation Under High Ionizing Dose Rates of Gamma or X-Ray Radiation of a 10 µm Radiation Tolerant Global Shutter Pixel [PDF]
SensorsA 10 × 10 µm2 radiation-tolerant voltage-domain global shutter pixel with radiation-hardened by design (RHBD) device modification is developed to operate under high ionizing-dose rates and high total ionizing-dose (TID) levels. Therefore, a modified NMOS
Pedro Santos +3 more
doaj +2 more sources
Development of Gentle Slope Light Guide Structure in a 3.4 μm Pixel Pitch Global Shutter CMOS Image Sensor with Multiple Accumulation Shutter Technology [PDF]
Sensors, 2017 CMOS image sensors (CISs) with global shutter (GS) function are strongly required in order to avoid image degradation. However, CISs with GS function have generally been inferior to the rolling shutter (RS) CIS in performance, because they have more ...
Hiroshi Sekine +8 more
doaj +2 more sources
Development of Low Parasitic Light Sensitivity and Low Dark Current 2.8 μm Global Shutter Pixel [PDF]
Sensors, 2018 : We developed a low parasitic light sensitivity (PLS) and low dark current 2.8 μm global shutter pixel. We propose a new inner lens design concept to realize both low PLS and high quantum efficiency (QE).
Toshifumi Yokoyama +5 more
doaj +2 more sources
Charge-Domain Type 2.2 µm BSI Global Shutter Pixel with Dual-Depth DTI Produced by Thick-Film Epitaxial Process [PDF]
SensorsWe developed a 2.2 µm backside-illuminated (BSI) global shutter (GS) pixel featuring true charge-domain-correlated double sampling (CDS). To enhance the inverse parasitic light sensitivity (1/PLS), we implemented a thick-film epitaxial process ...
Toshifumi Yokoyama +6 more
doaj +2 more sources
A 326,000 fps 640 × 480 Resolution Continuous-Mode Ultra-High-Speed Global Shutter CMOS BSI Imager [PDF]
SensorsThis paper describes an ultra-high-speed monolithic global shutter CMOS image sensor capable of continuous motion capture at 326,000 fps with a resolution of 640 × 480 pixels.
Jean-Luc Bacq +16 more
doaj +2 more sources
A 1000 fps High-Dynamic-Range Global Shutter CMOS Image Sensor with Full Thermometer Code Current-Steering Ramp [PDF]
SensorsWe present a 1024 × 512, 1000 fps, high-dynamic-range global shutter CMOS image sensor. The pixel is based on a voltage domain global shutter architecture, featuring a pitch of 24 μm × 24 μm.
Liqiang Han +15 more
doaj +2 more sources