Results 181 to 190 of about 51,731 (251)

Large-amplitude variability driven by giant dust storms on a planetary-mass companion. [PDF]

open access: yesSci Adv
Tan X   +19 more
europepmc   +1 more source

Heterojunction‐Engineered Mass Spectrometry Platform for Deciphering Serum Metabolic Fingerprints in Diagnosis of Respiratory Diseases

open access: yesAdvanced Science, EarlyView.
Hollow Co3O4/TiO2 heterojunctions are engineered for high‐throughput laser desorption/ionization mass spectrometry. The built‐in electric field drives efficient charge separation and photothermal conversion, while the hierarchical mesoporous network enables robust salt and protein tolerance.
Junyu Chen   +8 more
wiley   +1 more source

Enhancing Biogenic Formic Acid Production in the Modified OxFA Process by Acetonitrile Addition

open access: yesAdvanced Science, EarlyView.
In this study, the beneficial effect of using acetonitrile as a co‐solvent in the modified OxFA process is shown, outperforming methanol, demonstrating improved reaction kinetics combined with high selectivity for the HPA‐2 (H5PV2Mo10O40) catalyzed oxidation of xylose to FA.
Jan‐Dominik H. Krueger   +7 more
wiley   +1 more source

Thin‐Film Thermal Sensors on Chitosan Substrates for Sustainable Transient Electronics

open access: yesAdvanced Electronic Materials, EarlyView.
Fully transient thin‐film temperature sensors are realized on pure chitosan substrates using Mo‐based RTDs and a‐IGZO/Mo thermistors. The devices exhibit high sensitivity, mechanical flexibility, humidity‐aware operation, and complete dissolution in natural solvents.
Ahmed Rasheed   +14 more
wiley   +1 more source

Twisted MoS2 Bilayers as Functional Elements in Memtransistors: Hysteresis, Optical Signatures, and Photocurrent Kinetics

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash   +4 more
wiley   +1 more source

Uranium Doped Gallium Nitride Epitaxial Thin Films

open access: yesAdvanced Electronic Materials, EarlyView.
Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix   +10 more
wiley   +1 more source

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