Results 171 to 180 of about 49,849 (265)

Grain Boundaries Control Lithiation of Solid Solution Substrates in Lithium Metal Batteries. [PDF]

open access: yesAdv Sci (Weinh)
Aota LS   +13 more
europepmc   +1 more source

Resistance to Overdoping Allows Over 2000 S cm−1 Conductivity in P(g3BTTT) With Anion‐Exchange Doping

open access: yesAdvanced Materials, EarlyView.
Anion‐exchange doping of conjugated polymers is an effective way to achieve high conductivities. Here, we report over 2000 S cm−1 electrical conductivity for doped P(g3BTTT). In addition, we show that P(g3BTTT) sustains exceptionally high doping levels without any drop in the charge mobility.
Basil Hunger   +14 more
wiley   +1 more source

Approaching crystal's limit of thermoelectrics by nano-sintering-aid at grain boundaries. [PDF]

open access: yesNat Commun
Lei J   +9 more
europepmc   +1 more source

Organic Materials of Tomorrow: Horizons of Artificial Intelligence

open access: yesAdvanced Materials, EarlyView.
This review examines machine learning techniques accelerating the discovery of organic semiconductors by linking molecular structure to properties. Key methods include graph neural networks, generative models, and active learning. Applications to organic photovoltaics demonstrate practical impact.
Harold Mena   +3 more
wiley   +1 more source

Non-Amontons frictional behaviors of grain boundaries at layered material interfaces. [PDF]

open access: yesNat Commun
Song Y   +8 more
europepmc   +1 more source

Non-Amontons Frictional Behaviors of Grain Boundaries at Layered Material Interfaces

open access: yes, 2023
Hod O   +8 more
europepmc   +1 more source

Path‐Decoupled Cation‐Eutaxy III–V van der Waals Memristive Semiconductors for Mitigating the Neuromorphic Accuracy‐Energy Trade‐off

open access: yesAdvanced Materials, EarlyView.
Path‐decoupled III–V van der Waals memtransistors spatially separate ionic and electronic transport to overcome the conventional trade‐off between accuracy and energy in neuromorphic hardware. Mobile K+ ions in the vdW gaps set a wide conductance window, Gmax/Gmin, while gate‐tunable hole conduction lowers programming energy, enabling reliable ...
Jihong Bae   +13 more
wiley   +1 more source

Selective Isolation of Surface Grain Boundaries by Oxide Dielectrics Improves Cd(Se,Te) Device Performance. [PDF]

open access: yesACS Appl Mater Interfaces
Sartor BE   +6 more
europepmc   +1 more source

Generating Unconventional Spin‐Orbit Torques With Patterned Phase Gradients in Tungsten Thin Films

open access: yesAdvanced Materials, EarlyView.
ABSTRACT A key aim in spintronics is to achieve current‐induced magnetization switching via spin‐orbit torques without external magnetic fields. For this, the focus of recent work has been on introducing controlled lateral gradients across ferromagnet/heavy‐metal devices, giving variations in thickness, composition, or interface quality.
Lauren J. Riddiford   +9 more
wiley   +1 more source

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