Results 121 to 130 of about 206 (155)

Efficient Generation of Microwave Oscillations at Harmonics of the Conductance of a Gunn Diode

Instruments and Experimental Techniques, 2004
Basic characteristics of prototype oscillators operating at the second (∼19 GHz) and third (∼36 GHz) harmonics of the negative conductance of a 3А715Ж Gunn diode are presented. The output power of these oscillators is 1.5–8.0 mW and the range of electronic frequency tuning is up to 390 MHz.
Yu. I. Alekseev, I. V. Maliev
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Gunn diodes with different cathode contacts oscillation on harmonic frequencies

International Journal of Infrared and Millimeter Waves, 1996
The studies of Gunn diodes on the basis of GaAs with different types of cathode contacts, the profile of doping, the active area length and temperature at frequencies of the second and third harmonics were carried out to obtain effective oscillation in the millimeter and submillimeter ranges.
Yu. V. Arkusha, E. D. Prokhorov, S. I. Sanin   +2 more
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Broadband GaAs-oscillators of mm-range [utilizing Gunn diodes]

The Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves (IEEE Cat. No.04EX828), 2004
In this paper, the design and performance of mm-range broadband oscillators in wave guide, coaxial-wave guide and microstrip configurations are considered. The power, frequency and temperature characteristics of the offered oscillators are both experimentally and theoretically investigated.
A.V. Dyadchenko, A.A. Mishnyov, N.E. Polyanski   +2 more
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Mechanism of the relaxation oscillations due to impact ionization in Gunn diodes

Physics Letters A, 1971
Abstract It is shown that two new types of the oscillations can arise in a Gunn diode when the impact ionization takes place within the high field domain. These oscillations are due to the change of the conditions of the domain formation and of the current-voltage characteristics of the homogeneous sample.
B.L. Gelmont, M.S. Shur
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Gunn diode oscillators for telecommunication system with direct frequency modulation

2000 10th International Crimean Microwave Conference. "Microwave and Telecommunication Technology". Conference Proceedings (IEEE Cat. No.00EX415), 2000
Low FM and AM noise Gunn diode oscillators with operating frequencies from 10 to 37.5 GHz have been designed, produced and tested. The opportunity of linear tuning in the frequency range from 150 to 500 MHz realized with varactors makes it possible to use Gunn diode oscillators in FM transmitters.
A.A. Lugovoy, Yu.A. Tsvirko
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A sensitive millimeter wave self-oscillating Gunn diode mixer

Proceedings of the IEEE, 1971
A sensitive millimeter wave receiver has been developed in which a single Gunn diode is employed both as local oscillator and mixer. The dynamic range can extend from well below 10 pW to well above 1 µW. Useful conversion gain is realized owing to the negative differential resistance of the device.
M.J. Lazarus, E.D. Bullimore, S. Novak
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40 WATT 16 GHz Pulsed Gunn Diode Oscillator

4th European Microwave Conference, 1974, 1974
Very high peak power levels at microwave frequencies can be generated from several semiconductor devices (Gunn diodes, L.S.A. mode devices, TRAPATT's etc.) but some of these devices are only little removed from laboratory devices, and are limited in frequency.
R. Stevens, D. Tarrant, F.A. Myers
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W-Band Microstrip Oscillator Using InP Gunn Diode

1987 IEEE MTT-S International Microwave Symposium Digest, 1987
A low cost, light weight, rugged microstrip oscillator with a very simple structure has been developed in W-Band (34 GHz). The active element is an InP Gunn device operating in its fundamental mode of oscillation. The oscillator provides 35 mW of CW output power and a bias tuning bandwidth of 400 MHz.
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Study of the Harmonic Effects for Waveguide Gunn-Diode Oscillator Optimization

IEEE Transactions on Microwave Theory and Techniques, 1980
The dependence on harmonic load conditions of waveguide Gunn oscillator performance is theoretically and experimentally studied. A simple waveguide mount is presented, which by controlling the diode harmonic load conditions, with one single adjustment permits considerable simultaneous improvement in output power, bias tuning, and varactor tuning ...
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Self-Modulation of Microwave Oscillations Generated in Gunn Diodes

1971
A theoretical and experimental study was made of the self-modulation in Gunn diodes (i.e., the generation by these diodes of a 100% modulated microwave signal under certain conditions). The phenomenon is due to a sudden drop of the mean diode current, when the microwave generation voltage is reached, and to the excitation of oscillations, because of ...
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