Results 121 to 130 of about 972 (218)

Semiconductor generator module for medical and biological applications

open access: yesТехнологія та конструювання в електронній апаратурі, 2006
A highly stable semiconductor generator module for extremely high-frequency (EHF) therapy equipment is proposed. The required high unloaded quality factor and the possibility of radiation frequency tuning are achieved by implementing large positive ...
S. V. Plaksin   +2 more
doaj  

Submillimeter sources for radiometry using high power Indium Phosphide Gunn diode oscillators

open access: yes, 1990
A study aimed at developing high frequency millimeter wave and submillimeter wave local oscillator sources in the 60-600 GHz range was conducted. Sources involved both fundamental and harmonic-extraction type Indium Phosphide Gunn diode oscillators as ...
Deo, Naresh C.
core  

A Study on the Design of an Oscillator Using Gunn Diode

open access: yes, 1992
본 논문에서는 Gunn 다이오드를 마이크로 스트립 선로와 결합하여 X-Band의 발진기를 제작하고 실험했다. 주파수 안정도를 높이기 위하여 유전체 공진기를 사용하였다. 제작된 발진기의 최대 출력은 발진 주파수 10.678㎓에서 9mW을 얻었다.In this paper, an X-band Gunn Diode oscillator which is coupled with microstrip line is designed and tested ...
강중순
core  

Microfluidic photoreactor to treat neonatal jaundice. [PDF]

open access: yesBiomicrofluidics, 2021
Lahmann JM   +7 more
europepmc   +1 more source

Gunn Diode with Induced Channel in Active Region

open access: yes, 2002
Представлены результаты теоретического исследования работы субмикронных диодов Ганна с активной областью без ионизированных примесей и с модуляцией проводимости в ней.
Прохоров, Э.Д.   +2 more
core   +1 more source

Resonance tunnelling cathode for Gunn diode

open access: yes, 2007
Рассматривается диод Ганна с резонансно-туннельным катодом с одним энергетическим уровнем в квантовой яме. Использование такого катода приводит к тому, что вольтамперные характеристики диода имеют два участка отрицательной дифференциальной проводимости ...
Прохоров, Э.Д.   +2 more
core  

Sensing nitriles with THz spectroscopy of urine vapours from cancers patients subject to chemotherapy. [PDF]

open access: yesSci Rep, 2022
Vaks V   +9 more
europepmc   +1 more source

Structural and electrical characterization of InGaAs gunn diode based light emitting device structures

open access: yes
Fen Bilimleri Enstitüsü, Metalurji ve Malzeme Mühendisliği Ana Bilim DalıBu çalışmada Metal Organik Buhar Fazı Epitaksi (MOVPE) tekniği kullanılarak InP alttaş üzerine büyütülen InGaAs Gunn diyodu tabanlı ışık yayan aygıt yapılarının yapısal ve ...
Demir, Meryem
core  

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