Results 91 to 100 of about 3,132 (215)

Nanostructures Stacked on Hafnium Oxide Films Interfacing Graphene and Silicon Oxide Layers as Resistive Switching Media. [PDF]

open access: yesNanomaterials (Basel), 2023
Kahro T   +12 more
europepmc   +1 more source

Sub‐Nanometer Cobalt on Tungsten Titanium Carbide MXene (W2TiC2Tx): An Electrocatalyst for Highly Efficient and Stable Alkaline Hydrogen Evolution at Industrial‐Scale Current Density

open access: yesAdvanced Materials, EarlyView.
A novel W2TiC2Tx MXene prepared through a MAX‐phase route supports sub‐nanometer Co for highly efficient alkaline hydrogen evolution. Strong Co–W interfacial interactions optimize hydrogen adsorption and catalytic activity, enabling low overpotentials of 63 mV at 10 mA cm−2, small Tafel slope of 44.3 mV dec−1, and exceptional durability at industrially
Xiaopeng Liu   +15 more
wiley   +1 more source

Phase transition mechanism and property prediction of hafnium oxide-based antiferroelectric materials revealed by artificial intelligence

open access: yesJournal of Materiomics
Constrained by the inefficiency of traditional trial-and-error methods, especially when dealing with thousands of candidate materials, the swift discovery of materials with specific properties remains a central challenge in contemporary materials ...
Shaoan Yan   +8 more
doaj   +1 more source

A Novel Cortisol Immunosensor Based on a Hafnium Oxide/Silicon Structure for Heart Failure Diagnosis. [PDF]

open access: yesMicromachines (Basel), 2022
Ben Halima H   +4 more
europepmc   +1 more source

Extreme Bond Ionicity in Mg─Te Chalcogenides for Ultrathin Low Voltage Selector‐Only Memory beyond the Leakage Scaling Limit

open access: yesAdvanced Materials, EarlyView.
Mg─Te chalcogenides address the leakage scaling trade‐off in ultrathin selector‐only memory. Structural partitioning in multiphase Mg─Te, combined with highly ionic Mg─Te bonding and Hf interfacial engineering, supports reliable 5 nm thickness operation at low write voltage with suppressed leakage current, narrow threshold voltage distributions, 10 ns ...
Yoori Seo   +5 more
wiley   +1 more source

Effects of Charge Imbalance on Field‐Induced Instability of HfO2‐Based Ferroelectric Tunnel Junctions

open access: yesAdvanced Electronic Materials
Ferroelectricity in hafnium‐based materials has attracted significant research attention and is used in various applications owing to their complementary metal‐oxide‐semiconductor compatibility, scalability, and low‐power operation.
Wonjun Shin   +5 more
doaj   +1 more source

Silicon Passivation by Ultrathin Hafnium Oxide Layer for Photoelectrochemical Applications. [PDF]

open access: yesFront Chem, 2022
Staišiūnas L   +7 more
europepmc   +1 more source

Atomically Precise Ag11 and Ag12 Nanocluster‐Assembled 2D Materials for Memristive and Neuromorphic Functionality

open access: yesAdvanced Materials, EarlyView.
Two‐dimensional Ag11 and Ag12 cluster‐assembled materials (CAMs) are synthesized, offering atomically precise platforms with tunable electronic properties. The resulting materials exhibit robust memristive switching and neuromorphic response, demonstrating their promise for advanced nanoelectronic and memory applications.
Noohul Alam   +7 more
wiley   +1 more source

Stress modulation of hafnium-based ferroelectric material orientation in 3D cylindrical capacitor

open access: yesAIP Advances
Hafnium-based ferroelectric materials have attracted a lot of attention, but the distributions of the materials need to be tuned for commercialization, including phase distribution and polarization orientation distribution.
Wenqi Li   +7 more
doaj   +1 more source

Antibacterial Efficacy and Antioxidant Potential of Hafnium-coated Titanium Implants: An In-vitro Assessment

open access: yesJournal of Clinical and Diagnostic Research
Introduction: Implant related infections and oxidative stress remain major concerns in dental and orthopaedic implantology, often leading to complications and implant failure.
Vishaka Kothari   +4 more
doaj   +1 more source

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