Results 211 to 220 of about 3,150 (261)
Some of the next articles are maybe not open access.
Nuclear Instruments and Methods, 1979
Abstract The reduction of hafnium dioxide to the metal by calcium in the presence of sodium in a closed reaction vessel is described. After recuperation, the metal is pressed into a pellet from which targets can be prepared by evaporation.
openaire +1 more source
Abstract The reduction of hafnium dioxide to the metal by calcium in the presence of sodium in a closed reaction vessel is described. After recuperation, the metal is pressed into a pellet from which targets can be prepared by evaporation.
openaire +1 more source
Journal of the Less Common Metals, 1969
Abstract The oxidation of hafnium has been studied at 760 mm Hg oxygen pressure in the temperature range 600 °–1250 °C using the thermogravimetric technique. A primarily linear oxidation rate was determined for hafnium from 600 ° to 800 °C. For as-received hafnium, an activation energy of oxidation of 0.90 eV with the rate equation, K L ...
openaire +1 more source
Abstract The oxidation of hafnium has been studied at 760 mm Hg oxygen pressure in the temperature range 600 °–1250 °C using the thermogravimetric technique. A primarily linear oxidation rate was determined for hafnium from 600 ° to 800 °C. For as-received hafnium, an activation energy of oxidation of 0.90 eV with the rate equation, K L ...
openaire +1 more source
Atomic Layer Deposition of Hafnium Oxide from Hafnium Chloride and Water
Journal of the American Chemical Society, 2008Hafnium oxide (HfO2) is a leading candidate to replace silicon oxide as the gate dielectric for future generation metal-oxide-semiconductor based nanoelectronic devices. Atomic layer deposition (ALD) has recently gained interest because of its suitability for fabrication of conformal films with thicknesses in the nanometer range.
Atashi B, Mukhopadhyay +2 more
openaire +2 more sources
Small, 2022
AbstractHafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong in the memory arena over the last two decades. Its dielectric properties have been researched rigorously for the development of flash memory devices. In this review, the application of HfO2in two main emerging nonvolatile memory technologies is surveyed ...
Writam Banerjee +2 more
openaire +2 more sources
AbstractHafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong in the memory arena over the last two decades. Its dielectric properties have been researched rigorously for the development of flash memory devices. In this review, the application of HfO2in two main emerging nonvolatile memory technologies is surveyed ...
Writam Banerjee +2 more
openaire +2 more sources
Hafnium Germanate from a Hydrous Hafnium Germanium Oxide Gel
Inorganic Chemistry, 1998The gel chemistry of germanium is explored through the formation and composition of a hydrous metal oxide precursor gel used in the preparation of the HfGeO(4) and HfGeO(4):Ti X-ray phosphors. The enhanced solubility of hexagonal GeO(2) in dilute ammoniacal solutions is exploited to give a convenient and high-yield precipitation.
openaire +2 more sources
2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2019
Thermal atomic layer etching (ALE) using the fluorination and ligand-exchange mechanism was employed to etch amorphous and crystalline films of hafnium oxide, zirconium oxide, and hafnium zirconium oxide. HF was the fluorination reactant and dimethylaluminum chloride (DMAC) or titanium tetrachloride was the metal precursor for ligand-exchange.
Jessica A. Murdzek, Steven M. George
openaire +1 more source
Thermal atomic layer etching (ALE) using the fluorination and ligand-exchange mechanism was employed to etch amorphous and crystalline films of hafnium oxide, zirconium oxide, and hafnium zirconium oxide. HF was the fluorination reactant and dimethylaluminum chloride (DMAC) or titanium tetrachloride was the metal precursor for ligand-exchange.
Jessica A. Murdzek, Steven M. George
openaire +1 more source
Oxidation of Titanium, Zirconium, and Hafnium
Journal of The Electrochemical Society, 1959A metallographic study of the high-temperature oxidation of titanium, zirconium, and hafaium has showa that alterations in the rate equations relating to such processes may be associated with the establishment of oxygen diffusion gradienis in the surface layers of the metal.
G. R. Wallwork, A. E. Jenkins
openaire +1 more source
Journal of Materials Research, 2004
Oxides and silicates of zirconium and hafnium are actively being considered and tested to replace SiO2 as the gate material. Though these materials have the high-dielectric constant (k ∼ 20–25) needed to provide a larger equivalent oxide thickness, they are very refractory and difficult to etch by wet and dry methods.
Viral Lowalekar, Srini Raghavan
openaire +1 more source
Oxides and silicates of zirconium and hafnium are actively being considered and tested to replace SiO2 as the gate material. Though these materials have the high-dielectric constant (k ∼ 20–25) needed to provide a larger equivalent oxide thickness, they are very refractory and difficult to etch by wet and dry methods.
Viral Lowalekar, Srini Raghavan
openaire +1 more source
Hafnium Oxide-Based Nanoplatform for Combined Chemoradiotherapy
ACS Biomaterials Science & Engineering, 2021Recently, the combined therapy has become one of the main approaches in cancer treatment. Combining different approaches may provide a significant outcome by triggering several death mechanisms or causing increased damage of tumor cells without hurting healthy ones.
Anastasiia A. Sherstiuk +6 more
openaire +2 more sources
Oxidation of hafnium alloys with nickel
Metal Science and Heat Treatment, 1975Alloying of hafnium with 2–8% Ni substantially increases its scale resistance, evidently due to formation of HfNi at the scale-alloy interface, which along with the intermetallic phases substantially reduces the solution of oxygen in the alloys.
R. F. Voitovich, �. I. Golovko
openaire +1 more source