Results 191 to 200 of about 3,150 (261)

Nanomedicine in 2026: Illustrative Quantitative Analyses of EPR Heterogeneity, Clinical Trial Attrition, and Emerging Horizons for Active Nanotherapeutics. [PDF]

Int J Nanomedicine
Fayez SM.
europepmc   +1 more source

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

Advanced Electronic Materials, EarlyView.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol, Nikhil Garg, Matteo Mazza, Yanming Zhang, Elisa Zaccaria, Wooseok Choi, Bert Jan Offrein, Laura Bégon‐Lours   +7 more
wiley   +1 more source

Solution-Processed High-k HfO₂ Gate Insulator for High-Performance Indium-Zinc-Oxide Thin-Film Transistors: Optimisation of Annealing Temperature and Insulator Thickness. [PDF]

Materials (Basel)
Sairike J, Tuokedaerhan K, Sailanbek S, Cai Z, Yang H.   +4 more
europepmc   +1 more source

People Counting and Positioning Using Low‐Resolution Infrared Images for FeFET‐Based In‐Memory Computing

Advanced Electronic Materials, EarlyView.
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar, Li Zhang, Alexander Rehmer, Marc Lupp, Subhashree Baskaran, Osama Abdelaal, Franz Müller, Nandakishor Yadav, Bing Li, Thomas Kämpfe   +9 more
wiley   +1 more source

High-speed energy-efficient memristor confined in sub-5 nm space with elemental oxygen reservoir layer. [PDF]

Nat Commun
Li C, Niu W, Wan D, Tang L, Xie Z, Zhang K, Liu Y, Liu Q, Liao L, Zou X, Liu X.   +10 more
europepmc   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

The (Ta + Ti) to Hf concentration ratio in MC carbides as a novel indicator for predicting γ' phase fraction in hafnium-containing superalloys. [PDF]

Sci Rep
Witala B, Moskal G, Tomaszewska A, Roskosz S, Moskal I, Zdunek J, Dudek A, Chmiela B.   +7 more
europepmc   +1 more source

All HfO_<i>x</i>-Resistive Switches with the Conducting Oxygen Vacancy Exchange Layer and Self-Limited Oxide Layer. [PDF]

ACS Appl Mater Interfaces
Schreyer P, Kaiser N, Nasiou D, Piros E, Duan Y, Kim T, Li Y, Shih LC, Winkler R, Aguirre FL, Vogel T, Arzumanov A, Chen JS, Molina-Luna L, Alff L.   +14 more
europepmc   +1 more source

3D atomic-scale metrology of strain relaxation and roughness in Gate-All-Around transistors via electron ptychography. [PDF]

Nat Commun
Karapetyan S, Zeltmann SE, Wilk G, Chen TK, Hou VD, Muller DA.   +5 more
europepmc   +1 more source

Clinical translation and landscape of stimuli-responsive nanomedicines and microscale therapeutics.

Chem Soc Rev
Kobzev D, Kulyk O, Barmin RA, Tatarets A, Pallares RM, Kiessling F, Lammers T, Peña Q.   +7 more
europepmc   +1 more source