Results 181 to 190 of about 3,150 (261)

Curvature‐Controlled Field Effect Enables Thermal Localization for Low‐Temperature C─F Bond Activation

open access: yesAdvanced Science, EarlyView.
High‐curvature γ‐Al2O3 nanoneedles concentrate heat into nanoscale hotspots under identical external heating, amplifying local temperature and accelerating CF4 decomposition. By linking curvature‐induced thermal localization to lower apparent activation barriers and enhanced intermediate formation, this work reveals geometry as a powerful design ...
Hang Zhang   +12 more
wiley   +1 more source

Discovering Early‐Stage Gas Generation Kinetics Enables Thermal Runaway Early Warning in Lithium‐Ion Batteries

open access: yesAdvanced Science, EarlyView.
Operando gas diagnostics reveal a previously unrecognized chemical activation (CA) stage during thermal runaway in lithium‐ion batteries. A physics‐informed gas generation kinetics network (GGKNet) is developed to reconstruct reaction pathways and physical models automatically.
Jiabo Zhang   +6 more
wiley   +1 more source

Engineering Strategies to Suppress Thermal Runaway Propagation in Lithium‐Ion Battery: Mechanisms, Metrics, Materials, and Evaluation Methods

open access: yesAdvanced Science, EarlyView.
Thermal runaway propagation can transform a single‐cell failure into a system‐level hazard in lithium‐ion battery packs. This review clarifies how heat transfer, gas venting, combustion, and configuration govern cell‐to‐cell failure, and links measurable metrics, pathway‐oriented suppression materials, and experimental/modeling tools to guide safer ...
Jinrong Su   +15 more
wiley   +1 more source

Liquid Metals in Radio Frequency Applications: A Review of Physics, Manufacturing, and Emerging Technologies

open access: yesAdvanced Electronic Materials, EarlyView.
This paper reviews the physics of liquid metals in RF devices, including the influence of mechanical strain on resonance as well as fabrication methods and strategies for designing tunable and strain‐tolerant inductors, capacitors, and antennas.
Md Saifur Rahman, William J. Scheideler
wiley   +1 more source

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

open access: yesAdvanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song   +10 more
wiley   +1 more source

Stress Engineering in the Optimization of Next-Generation Hafnium-Based Ferroelectric Memory. [PDF]

open access: yesNanomaterials (Basel)
Li Z   +11 more
europepmc   +1 more source

Model‐Based Time‐Modulated Write Algorithm for 1R Analog Memristive Crossbar Arrays

open access: yesAdvanced Electronic Materials, EarlyView.
A novel model‐based time‐modulated write algorithm efficiently programs analog 1R memristive crossbar arrays by varying pulse duration at a fixed voltage. By leveraging a physics‐based compact model and a dynamic gain mechanism, this approach overcomes device nonlinearities and parasitic effects.
Richard Schroedter   +7 more
wiley   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

open access: yesAdvanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho   +6 more
wiley   +1 more source

Ultra‐Low Power Consumption and Highly Durability in Sm:HfO2 Thin Film Ferroelectric Memristor for Edge Detection

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT With the continuous development of computer image processing, developing efficient and low‐power computing devices has become a key challenge. Memristors have integrated in‐situ storage and computing capabilities, making them an ideal choice for low‐power image processing computing architectures. However, current memristors are confronted with
Tengyu Li   +4 more
wiley   +1 more source

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