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Nanoscale Radiotherapy with Hafnium Oxide Nanoparticles
Future Oncology, 2012There is considerable interest in approaches that could improve the therapeutic window of radiotherapy. In this study, hafnium oxide nanoparticles were designed that concentrate in tumor cells to achieve intracellular high-energy dose deposit.Conventional methods were used, implemented in different ways, to explore interactions of these high-atomic ...
Laurence, Maggiorella +7 more
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Long time transients in hafnium oxide
Microelectronic Engineering, 2007In this work characterization of HfO"2 films in transient regime is presented. Charge trapping and detrapping, and degradation transients were investigated at long times while monitoring gate current or voltage. As for charge trapping, a logarithmic dependence on time was found.
PUZZILLI, Giuseppina, IRRERA, Fernanda
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Nuclear Instruments and Methods, 1979
Abstract The reduction of hafnium dioxide to the metal by calcium in the presence of sodium in a closed reaction vessel is described. After recuperation, the metal is pressed into a pellet from which targets can be prepared by evaporation.
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Abstract The reduction of hafnium dioxide to the metal by calcium in the presence of sodium in a closed reaction vessel is described. After recuperation, the metal is pressed into a pellet from which targets can be prepared by evaporation.
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Journal of the Less Common Metals, 1969
Abstract The oxidation of hafnium has been studied at 760 mm Hg oxygen pressure in the temperature range 600 °–1250 °C using the thermogravimetric technique. A primarily linear oxidation rate was determined for hafnium from 600 ° to 800 °C. For as-received hafnium, an activation energy of oxidation of 0.90 eV with the rate equation, K L ...
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Abstract The oxidation of hafnium has been studied at 760 mm Hg oxygen pressure in the temperature range 600 °–1250 °C using the thermogravimetric technique. A primarily linear oxidation rate was determined for hafnium from 600 ° to 800 °C. For as-received hafnium, an activation energy of oxidation of 0.90 eV with the rate equation, K L ...
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Use of hafnium(IV) oxide in biosensors
Journal of Immunoassay and Immunochemistry, 2018Hafnium(IV) oxide is a material with properties that can increase the sensitivity, durability, and reliability of biosensors made from silicon dioxide and other semiconductor materials due to its high dielectric constant, thermodynamic stability, and the simplicity with which it can be deposited.
Luis Carlos Ortiz-Dosal +2 more
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Hafnium Germanate from a Hydrous Hafnium Germanium Oxide Gel
Inorganic Chemistry, 1998The gel chemistry of germanium is explored through the formation and composition of a hydrous metal oxide precursor gel used in the preparation of the HfGeO(4) and HfGeO(4):Ti X-ray phosphors. The enhanced solubility of hexagonal GeO(2) in dilute ammoniacal solutions is exploited to give a convenient and high-yield precipitation.
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Atomic Layer Deposition of Hafnium Oxide from Hafnium Chloride and Water
Journal of the American Chemical Society, 2008Hafnium oxide (HfO2) is a leading candidate to replace silicon oxide as the gate dielectric for future generation metal-oxide-semiconductor based nanoelectronic devices. Atomic layer deposition (ALD) has recently gained interest because of its suitability for fabrication of conformal films with thicknesses in the nanometer range.
Atashi B, Mukhopadhyay +2 more
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2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2019
Thermal atomic layer etching (ALE) using the fluorination and ligand-exchange mechanism was employed to etch amorphous and crystalline films of hafnium oxide, zirconium oxide, and hafnium zirconium oxide. HF was the fluorination reactant and dimethylaluminum chloride (DMAC) or titanium tetrachloride was the metal precursor for ligand-exchange.
Jessica A. Murdzek, Steven M. George
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Thermal atomic layer etching (ALE) using the fluorination and ligand-exchange mechanism was employed to etch amorphous and crystalline films of hafnium oxide, zirconium oxide, and hafnium zirconium oxide. HF was the fluorination reactant and dimethylaluminum chloride (DMAC) or titanium tetrachloride was the metal precursor for ligand-exchange.
Jessica A. Murdzek, Steven M. George
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Oxidation of Titanium, Zirconium, and Hafnium
Journal of The Electrochemical Society, 1959A metallographic study of the high-temperature oxidation of titanium, zirconium, and hafaium has showa that alterations in the rate equations relating to such processes may be associated with the establishment of oxygen diffusion gradienis in the surface layers of the metal.
G. R. Wallwork, A. E. Jenkins
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Journal of Materials Research, 2004
Oxides and silicates of zirconium and hafnium are actively being considered and tested to replace SiO2 as the gate material. Though these materials have the high-dielectric constant (k ∼ 20–25) needed to provide a larger equivalent oxide thickness, they are very refractory and difficult to etch by wet and dry methods.
Viral Lowalekar, Srini Raghavan
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Oxides and silicates of zirconium and hafnium are actively being considered and tested to replace SiO2 as the gate material. Though these materials have the high-dielectric constant (k ∼ 20–25) needed to provide a larger equivalent oxide thickness, they are very refractory and difficult to etch by wet and dry methods.
Viral Lowalekar, Srini Raghavan
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