Results 281 to 290 of about 3,015,797 (333)
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Advanced Materials Interfaces, 2022
Hafnium oxides‐based ferroelectric materials are promising for applications in nonvolatile memory devices. To control the ferroelectricity of such materials, it is necessary to tune their polymorphism, interfacial features, and defect (oxygen vacancy ...
Joonbong Lee +9 more
semanticscholar +1 more source
Hafnium oxides‐based ferroelectric materials are promising for applications in nonvolatile memory devices. To control the ferroelectricity of such materials, it is necessary to tune their polymorphism, interfacial features, and defect (oxygen vacancy ...
Joonbong Lee +9 more
semanticscholar +1 more source
Plasma electrolytic oxidation of hafnium
International Journal of Refractory Metals and Hard Materials, 2017Abstract This paper presents the results of the investigation of plasma electrolytic oxidation (PEO) of hafnium. Atoms ionized during the PEO micro-discharging were identified using optical emission spectroscopy. The spectral line shape analysis of the hydrogen Balmer line H β indicated the presence of two types of micro-discharges characterized by ...
Stevan Stojadinović +2 more
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, 2021
The combination of copper and sulfonated hafnium oxide nanoparticles could be used as an alternative antimicrobial agent to combat multidrug resistant bacteria and membrane biofouling.
Ranjith Kumar Manoharan +4 more
semanticscholar +1 more source
The combination of copper and sulfonated hafnium oxide nanoparticles could be used as an alternative antimicrobial agent to combat multidrug resistant bacteria and membrane biofouling.
Ranjith Kumar Manoharan +4 more
semanticscholar +1 more source
Scintillation Liquids Loaded with Hafnium Oxide Nanoparticles for Spectral Resolution of γ Rays
, 2021Current mainstream spectroscopic scintillators for the detection of high-energy radiation are based on inorganic crystals and ceramics, which are difficult to scale up.
Hongxiang Zhao +8 more
semanticscholar +1 more source
Atomic Layer Deposition of Hafnium Oxide Using Anhydrous Hafnium Nitrate
Electrochemical and Solid-State Letters, 2002Atomic layer deposition of uniform thin hafnium oxide films has been demonstrated directly on H-terminated silicon surfaces using anhydrous hafnium nitrate (Hf(NO 3 ) 4 ) precursor and H 2 O vapor. Atomic layer deposition was initiated on hydrogen terminated silicon surfaces and occurred at substrate temperatures as low as 160°C.
J. F. Conley +6 more
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Atomic scale study of oxidation of hafnium: Formation of hafnium core and oxide shell
Journal of Applied Physics, 2006Perturbed angular correlation studies on hafnium foil subjected to annealing in oxygen atmosphere show that there exists three distinct Hf sites which are identified as probe atoms associated with hafnium metallic clusters, hafnium oxide, and oxygen deficient oxide zones. Kinetics of oxidation has been studied.
R. Govindaraj +2 more
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Journal of Materials Research, 2004
Oxides and silicates of zirconium and hafnium are actively being considered and tested to replace SiO2 as the gate material. Though these materials have the high-dielectric constant (k ∼ 20–25) needed to provide a larger equivalent oxide thickness, they are very refractory and difficult to etch by wet and dry methods.
Viral Lowalekar, Srini Raghavan
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Oxides and silicates of zirconium and hafnium are actively being considered and tested to replace SiO2 as the gate material. Though these materials have the high-dielectric constant (k ∼ 20–25) needed to provide a larger equivalent oxide thickness, they are very refractory and difficult to etch by wet and dry methods.
Viral Lowalekar, Srini Raghavan
openaire +1 more source
Use of hafnium(IV) oxide in biosensors
Journal of Immunoassay and Immunochemistry, 2018Hafnium(IV) oxide is a material with properties that can increase the sensitivity, durability, and reliability of biosensors made from silicon dioxide and other semiconductor materials due to its high dielectric constant, thermodynamic stability, and the simplicity with which it can be deposited.
Luis Carlos Ortiz-Dosal +2 more
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Crystallinity and Defects in Hafnium Oxide and Hafnium Silicate Films
ECS Meeting Abstracts, 2006Abstract not Available.
Nhan Nguyen +10 more
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Charge-optimized many-body potential for the hafnium/hafnium oxide system
Physical Review B, 2010A dynamic-charge, many-body potential function is proposed for the hafnium/hafnium oxide system. It is based on an extended Tersoff potential for semiconductors and the charge-optimized many-body potential for silicon oxide. The materials fidelity of the proposed formalism is demonstrated for both hafnium metal and various hafnia polymorphs.
Tzu-Ray Shan +4 more
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