Results 231 to 240 of about 821,355 (285)
High-Purity, Uniform, and Spherical Hafnium Carbide Nanoparticles Derived from a Novel Amorphous Hafnium-Based Metal-Organic Framework Precursor for the Preparation of High-Performance Ceramics. [PDF]
Materials (Basel)Cheng H +9 more
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Investigation of the Effect of Hafnium Chloride on Sperm Viability and Motility in Normospermic Cases: An In Vitro Study. [PDF]
CureusÖzden Z +4 more
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Synthesis of zirconium(IV) and hafnium(IV) isopropoxide, sec-butoxide and tert-butoxide.
Dalton TransDhaene E, Seno C, De Roo J.
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2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2019
Thermal atomic layer etching (ALE) using the fluorination and ligand-exchange mechanism was employed to etch amorphous and crystalline films of hafnium oxide, zirconium oxide, and hafnium zirconium oxide. HF was the fluorination reactant and dimethylaluminum chloride (DMAC) or titanium tetrachloride was the metal precursor for ligand-exchange.
Steven George, Jessica Murdzek
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Thermal atomic layer etching (ALE) using the fluorination and ligand-exchange mechanism was employed to etch amorphous and crystalline films of hafnium oxide, zirconium oxide, and hafnium zirconium oxide. HF was the fluorination reactant and dimethylaluminum chloride (DMAC) or titanium tetrachloride was the metal precursor for ligand-exchange.
Steven George, Jessica Murdzek
exaly +2 more sources
Thermodynamics of oxidation of zirconium and hafnium borides
Russian Journal of Inorganic Chemistry, 2016Gibbs thermodynamic potentials of oxidation of zirconium and hafnium diborides with molecular and atomic oxygen and nitrogen monoxide were calculated for a temperature range of 20–2500°C. Oxidation of zirconium and hafnium borides with atomic oxygen was found to be the most expected reaction.
V. Z. Poilov, E. N. Pryamilova
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New Precursors for the CVD of Zirconium and Hafnium Oxide Films
Chemical Vapor Deposition, 2006Alternatives to tetrakis(dialkylamido)zirconium and hafnium for use as precursors to zirconium and hafnium oxide films are examined. Tetrakis(trimethylhydrazido)zirconium and hafnium, Zr(NMeNMe 2 ) 4 and Hf(NMeNMe 2 ) 4 , and Hf[ t BUNCH 2 CH 2 N- t Bu] 2 are used with oxygen as precursors to zirconium and hafnium oxide films in a low-pressure CVD ...
J.-S. M. Lehn +2 more
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Advanced Engineering Materials, 2023 Due to its ferroelectricity, hafnium oxide has attracted a lot of attention for ferroelectric memory devices. Amongst different dopant elements, zirconium is found to be beneficial due to the relatively low crystallization temperature of hafnium ...
Ayse Sunbul
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Oxidation of Titanium, Zirconium, and Hafnium
Journal of The Electrochemical Society, 1959A metallographic study of the high-temperature oxidation of titanium, zirconium, and hafaium has showa that alterations in the rate equations relating to such processes may be associated with the establishment of oxygen diffusion gradienis in the surface layers of the metal.
G. R. Wallwork, A. E. Jenkins
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Charge transport in thin hafnium and zirconium oxide films
Optoelectronics, Instrumentation and Data Processing, 2017Albert Chin +2 more
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Zirconium and Hafnium Twin Monomers for Mixed Oxides
ChemPlusChem, 2014AbstractThe synthesis of Zr and Hf twin monomers of type [M(2‐OCH2cC4H3O)4(x HOCH2cC4H3O)] (3, M=Zr, x=0; 4, M=Hf, x=1) and M[(2‐OCH2‐C6H4O)2(2‐HOCH2‐C6H4OH)] (5, M=Zr; 6, M=Hf) by reacting M(OR)4 (M=Zr, R=nC3H7, 1; M=Hf, R=nC4H9, 2) with 2‐furylmethanol or 2‐hydroxybenzyl alcohol is discussed. Complexes 3–6 were homopolymerized under acidic conditions.
Christian, Schliebe +7 more
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