Results 241 to 250 of about 821,355 (285)
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Reduction of Zirconium and Hafnium Oxides
Nature, 1961MANY attempts have been made to reduce zirconium dioxide with hydrogen. At temperatures up to 1,500°C. no positive results have been reported1–3. Newbury and Pring4 reported that at 2,500°C. and a hydrogen pressure of 150 atm. no reduction took place. Mott5 stated that in an electric arc at 6,000°C. and at a hydrogen pressure of 22 atm.
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Tunability of Ferroelectric Hafnium Zirconium Oxide for Varactor Applications
IEEE Transactions on Electron Devices, 2021In this article, we present the capacitance–voltage ( ${C}$ – ${V}$ ) characteristics of Hf x Zr1− x O2 metal–ferroelectric–metal (MFM) thin-film capacitors with various Zr doping, thicknesses, and annealing temperatures. The influence of doping, electric field cycling, and annealing temperature on tuning characteristics (tunability) was ...
Sukhrob Abdulazhanov +9 more
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Journal of Materials Research, 2004
Oxides and silicates of zirconium and hafnium are actively being considered and tested to replace SiO2 as the gate material. Though these materials have the high-dielectric constant (k ∼ 20–25) needed to provide a larger equivalent oxide thickness, they are very refractory and difficult to etch by wet and dry methods.
Viral Lowalekar, Srini Raghavan
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Oxides and silicates of zirconium and hafnium are actively being considered and tested to replace SiO2 as the gate material. Though these materials have the high-dielectric constant (k ∼ 20–25) needed to provide a larger equivalent oxide thickness, they are very refractory and difficult to etch by wet and dry methods.
Viral Lowalekar, Srini Raghavan
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Intrinsic Paramagnetic Defects in Zirconium and Hafnium Oxide Films
MRS Proceedings, 2012ABSTRACTThin films of zirconium oxide (ZrOx) and hafnium oxide (HfOx) were rf sputtered onto fused silica substrates in an oxygen rich argon environment. Pure zirconium and hafnium targets were used, and the oxygen partial pressure was varied to control the oxygen stoichiometry.
Robert N. Schwartz +4 more
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High-temperature oxidation of zirconium and hafnium oxycarbides, and oxycarbonitrides
Soviet Powder Metallurgy and Metal Ceramics, 19721. A study was made, using a derivatographic technique, of the oxidation of powdered zirconium and hafnium oxycarbides, oxynitrides, and oxycarbonitrides in air at up to 950‡C. 2. The hypothesis is advanced that the oxidation process of the carbides and oxycarbides investigated passes through the stage of formation of intermediate MeO2C ...
V. A. Zhilyaev +3 more
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The spectrographic determination of hafnia in mixtures of hafnium and zirconium oxides
Journal of Applied Chemistry, 1951AbstractA general method for the quantitative analysis of non‐conducting solids has been developed, and its application is described for the particular problem of the determination of hafnium oxide in mixtures of hafnia and zirconia over the concentration range 0.01‐55%. The advantage of the method is that not more than 10 mg. of the oxides is required
G. W. J. Kingsbury, R. B. Temple
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Trivalent zirconium and hafnium ions in yttrium oxide ceramics
Optics and Spectroscopy, 2014An analysis of the electron spin resonance (ESR) spectrum of transparent ceramics composed of yttrium oxide with zirconium and hafnium additives has revealed the presence of signals (with similar parameters) from Zr3+ and Hf3+ ions, which have a similar electron configurations of the ground states: [Kr]4d 1 and [Xe]5d 1,
V. I. Solomonov +3 more
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New proton-Containing Oxides of Titanium, Zirconium and Hafnium
Nature, 1963Evidence was found suggesting tuat the golden oxides, ZrO/sub 2/, HfO/ sub 2/, and TiO/sub 2/, contain H and may be related to the various metal oxide bronzes. The oxides of Ti, Zr, and Hf, either as powders, compacts, ceramic bodies, or layers on metal substrates, were all readily converted on tueir surfaces to the golden materials. Daring H treatment
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CCCXXII.—The density of the oxides of zirconium and hafnium
J. Chem. Soc., Trans., 1924George Hevesy, Viggo Berglund
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