Results 241 to 250 of about 7,647 (298)
Synthesis of zirconium(IV) and hafnium(IV) isopropoxide, sec-butoxide and tert-butoxide.
Dalton TransDhaene E, Seno C, De Roo J.
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Effect of Lanthanum-Aluminum Co-Doping on Structure of Hafnium Oxide Ferroelectric Crystals. [PDF]
Adv Sci (Weinh)Li Z +12 more
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Engineered interfaces in indium-hafnium oxide catalysts unlock superior methanol productivity
Pérez-Ramírez J +15 more
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2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2019
Thermal atomic layer etching (ALE) using the fluorination and ligand-exchange mechanism was employed to etch amorphous and crystalline films of hafnium oxide, zirconium oxide, and hafnium zirconium oxide. HF was the fluorination reactant and dimethylaluminum chloride (DMAC) or titanium tetrachloride was the metal precursor for ligand-exchange.
Jessica A. Murdzek, Steven M. George
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Thermal atomic layer etching (ALE) using the fluorination and ligand-exchange mechanism was employed to etch amorphous and crystalline films of hafnium oxide, zirconium oxide, and hafnium zirconium oxide. HF was the fluorination reactant and dimethylaluminum chloride (DMAC) or titanium tetrachloride was the metal precursor for ligand-exchange.
Jessica A. Murdzek, Steven M. George
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Zirconium and Hafnium Twin Monomers for Mixed Oxides
ChemPlusChem, 2014AbstractThe synthesis of Zr and Hf twin monomers of type [M(2‐OCH2cC4H3O)4(x HOCH2cC4H3O)] (3, M=Zr, x=0; 4, M=Hf, x=1) and M[(2‐OCH2‐C6H4O)2(2‐HOCH2‐C6H4OH)] (5, M=Zr; 6, M=Hf) by reacting M(OR)4 (M=Zr, R=nC3H7, 1; M=Hf, R=nC4H9, 2) with 2‐furylmethanol or 2‐hydroxybenzyl alcohol is discussed. Complexes 3–6 were homopolymerized under acidic conditions.
Christian, Schliebe +7 more
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Oxidation of Titanium, Zirconium, and Hafnium
Journal of The Electrochemical Society, 1959A metallographic study of the high-temperature oxidation of titanium, zirconium, and hafaium has showa that alterations in the rate equations relating to such processes may be associated with the establishment of oxygen diffusion gradienis in the surface layers of the metal.
G. R. Wallwork, A. E. Jenkins
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Tunability of Ferroelectric Hafnium Zirconium Oxide for Varactor Applications
IEEE Transactions on Electron Devices, 2021In this article, we present the capacitance–voltage ( ${C}$ – ${V}$ ) characteristics of Hf x Zr1− x O2 metal–ferroelectric–metal (MFM) thin-film capacitors with various Zr doping, thicknesses, and annealing temperatures. The influence of doping, electric field cycling, and annealing temperature on tuning characteristics (tunability) was ...
Sukhrob Abdulazhanov +9 more
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Journal of Materials Research, 2004
Oxides and silicates of zirconium and hafnium are actively being considered and tested to replace SiO2 as the gate material. Though these materials have the high-dielectric constant (k ∼ 20–25) needed to provide a larger equivalent oxide thickness, they are very refractory and difficult to etch by wet and dry methods.
Viral Lowalekar, Srini Raghavan
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Oxides and silicates of zirconium and hafnium are actively being considered and tested to replace SiO2 as the gate material. Though these materials have the high-dielectric constant (k ∼ 20–25) needed to provide a larger equivalent oxide thickness, they are very refractory and difficult to etch by wet and dry methods.
Viral Lowalekar, Srini Raghavan
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Thermodynamics of oxidation of zirconium and hafnium borides
Russian Journal of Inorganic Chemistry, 2016Gibbs thermodynamic potentials of oxidation of zirconium and hafnium diborides with molecular and atomic oxygen and nitrogen monoxide were calculated for a temperature range of 20–2500°C. Oxidation of zirconium and hafnium borides with atomic oxygen was found to be the most expected reaction.
V. Z. Poilov, E. N. Pryamilova
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Reduction of Zirconium and Hafnium Oxides
Nature, 1961MANY attempts have been made to reduce zirconium dioxide with hydrogen. At temperatures up to 1,500°C. no positive results have been reported1–3. Newbury and Pring4 reported that at 2,500°C. and a hydrogen pressure of 150 atm. no reduction took place. Mott5 stated that in an electric arc at 6,000°C. and at a hydrogen pressure of 22 atm.
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