Development of a noninvasive device and method for measuring immune parameters in skin disease. [PDF]
de Geus ED +5 more
europepmc +1 more source
PSMA/PET-guided stereotactic radiosurgery treatment for intracranial metastases from prostate cancer. [PDF]
Goulenko V +12 more
europepmc +1 more source
Alterations in resting-state brain connectivity in patients with cervical spondylotic myelopathy: an fNIRS study. [PDF]
Zhang Q +6 more
europepmc +1 more source
Machine Learning-Powered fNIRS Detection of Idiopathic Central Precocious Puberty via Prefrontal Cortex Activation. [PDF]
Li Z +6 more
europepmc +1 more source
Quantification of oxidized and reduced cytochrome-c-oxidase by combining discrete-wavelength time-resolved and broadband continuous-wave near-infrared spectroscopy. [PDF]
Eskandari R +5 more
europepmc +1 more source
Extracranial Frontal Arachnoid Cyst in an Adult Patient: Case Report. [PDF]
Maheshwari S, Gangal YA.
europepmc +1 more source
Decoding paradoxical BOLD responses to transcranial ultrasound stimulation with concurrent optoacoustic magnetic resonance imaging. [PDF]
Chen Y +9 more
europepmc +1 more source
An HBT unilateral model to design distributed amplifiers
A novel heterojunction bipolar transistor (HBT) unilateral model oriented to a fast prediction of the performance of HBT monolithicmicrowave integrated-circuit distributed amplifiers is proposed.
Claudio Paoloni, S D'Agostino
exaly +3 more sources
Related searches:
An HSPICE HBT model for InP-based single HBTs
IEEE Transactions on Electron Devices, 1996An HBT model for InP-based single HBTs (SHBTs) was developed based on the conventional Gummel-Poon large-signal BJT model available in HSPICE. Several typical characteristics observed from InP-based SHBTs, such as soft breakdown and collector transit-time delay effects, were modeled through a macro modeling approach.
Yang, K Yang, Kyounghoon +4 more
openaire +1 more source
GaAs HBT's for analog circuits
Proceedings of the IEEE, 1993Silicon bipolar integrated circuit (IC) technology has dominated the analog IC world for over two decades. As the push for wider bandwidths with higher precision continues, the emergence of GaAs HBT technology is destined to challenge silicon bipolar's domination at the high end of the analog market.
Bert K. Oyama, Brian P. Wong
openaire +1 more source

