Results 171 to 180 of about 32,080 (222)
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2008 IEEE Compound Semiconductor Integrated Circuits Symposium, 2008
We discuss the many factors affecting the reliability of GaAs HBTs that we have encountered starting from the early days of AlGaAs-emitter HBTs through the present day use of InGaP-emitter HBTs. We discuss both wearout and infancy failure modes and try to distinguish fundamental (i.e., unavoidable) from nonfundamental failure modes.
B. Yeats +12 more
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We discuss the many factors affecting the reliability of GaAs HBTs that we have encountered starting from the early days of AlGaAs-emitter HBTs through the present day use of InGaP-emitter HBTs. We discuss both wearout and infancy failure modes and try to distinguish fundamental (i.e., unavoidable) from nonfundamental failure modes.
B. Yeats +12 more
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Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122), 2002
We report wide-band amplifiers using AlInAs/GaInAs transferred-substrate Heterojunction Bipolar Transistors (HBTs). A distributed amplifier exhibits 11.5 dB gain and 80 GHz bandwidth. Lumped amplifiers exhibit 8.2 dB gain with 80 GHz bandwidth and 18 dB gain with 50 GHz bandwidth and 400 GHz gain-bandwidth product, record for a single-stage amplifier.
S. Krishnan +5 more
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We report wide-band amplifiers using AlInAs/GaInAs transferred-substrate Heterojunction Bipolar Transistors (HBTs). A distributed amplifier exhibits 11.5 dB gain and 80 GHz bandwidth. Lumped amplifiers exhibit 8.2 dB gain with 80 GHz bandwidth and 18 dB gain with 50 GHz bandwidth and 400 GHz gain-bandwidth product, record for a single-stage amplifier.
S. Krishnan +5 more
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International Technical Digest on Electron Devices Meeting, 1992
We trial-produced InAlAs/InGaAs HBT (heterojunction bipolar transistor) and InAlGaAs/InGaAs HBT changing the base thickness from 1500 A to 4000 A. As a result, we clarified that many high energy electrons injected from the emitter reach the collector high electric field region with their high energy intact, and if the injection energy is high, those ...
null Miura +5 more
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We trial-produced InAlAs/InGaAs HBT (heterojunction bipolar transistor) and InAlGaAs/InGaAs HBT changing the base thickness from 1500 A to 4000 A. As a result, we clarified that many high energy electrons injected from the emitter reach the collector high electric field region with their high energy intact, and if the injection energy is high, those ...
null Miura +5 more
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Solid-State Electronics, 1997
Abstract This article discusses the use of heterostructure bipolar transistor (HBT) ICs in telecommunication system products. Of particular interest is the fit between HBT ICs and telecommunication system needs, in terms of commercial criteria as well as performance.
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Abstract This article discusses the use of heterostructure bipolar transistor (HBT) ICs in telecommunication system products. Of particular interest is the fit between HBT ICs and telecommunication system needs, in terms of commercial criteria as well as performance.
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Reliability investigation in SiGe HBT's
2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (IEEE Cat. No.01EX496), 2002This paper addresses some reliability properties of SiGe HBTs. We first verified that no major problems were related to the SiGe layer through DC life tests. In the second step, we investigated the hot carrier influence on the DC, noise and microwave properties of these devices.
J. Kuchenbecker +9 more
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Agilent HBT model extraction and circuit verification for InGaP/GaAs HBT
2008 11th IEEE International Conference on Communication Technology, 2008Agilent HBT model parameters are extracted from the multi-finger InGaP/ GaAs HBT fabricated in 2 um process. Comparison has been made between measured and simulated data for verification purpose. With frequency range from DC to 20.05 GHz, this model is suitable for simulating InGaP/ GaAs HBT AC small -signal characterization. Using this model to verify
null Jian Han +3 more
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Solid-State Electronics, 1995
Abstract Recent advances in heterojunction bipolar transistor (HBT) technology enable trial uses in some systems utilizing advantages of HBTs such as high power handling capability, high current drive capability, low 1 f noise characteristics, with high frequency and high speed performance.
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Abstract Recent advances in heterojunction bipolar transistor (HBT) technology enable trial uses in some systems utilizing advantages of HBTs such as high power handling capability, high current drive capability, low 1 f noise characteristics, with high frequency and high speed performance.
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A multifunctional HBT technology
12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC), 2002A self-aligned AlGaAs/GaAs HBT technology has been developed for the fabrication of both high-performance microwave circuits and high-performance digital circuits. The technology provides transistors with high f/sub max/ (up to 218 GHz), high f/sub t/ (up to 98 GHz), and high efficiency (power added efficiency higher than 67.8% at 10 GHz) microwave ...
W.J. Ho +8 more
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58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526), 2002
Dramatic progress in GaN electronics has led to increased interest in bipolar transistors. Although there have been reports of GaN bipolars from several groups, the development of the GaN bipolar transistor is still in its fundamental stages. In the case of GaN, the usual correlation between common base, Gummel, and common emitter characteristics does ...
L. McCarthy +7 more
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Dramatic progress in GaN electronics has led to increased interest in bipolar transistors. Although there have been reports of GaN bipolars from several groups, the development of the GaN bipolar transistor is still in its fundamental stages. In the case of GaN, the usual correlation between common base, Gummel, and common emitter characteristics does ...
L. McCarthy +7 more
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Solid-State Electronics, 1995
Abstract SiGe is just on an upswing. Attractive potentials can be foreseen and outstanding performance was even demonstrated, e.g. high frequencies above 100 GHz, low noise below 0.5 dB at 2 GHz, high transconductances around 400 mS/mm. A further driving force for the growing engagement with SiGe is its basic compatibility to standard Si-technology ...
U König, H Dämbkes
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Abstract SiGe is just on an upswing. Attractive potentials can be foreseen and outstanding performance was even demonstrated, e.g. high frequencies above 100 GHz, low noise below 0.5 dB at 2 GHz, high transconductances around 400 mS/mm. A further driving force for the growing engagement with SiGe is its basic compatibility to standard Si-technology ...
U König, H Dämbkes
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