Results 191 to 200 of about 12,328 (233)
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58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526), 2002
Dramatic progress in GaN electronics has led to increased interest in bipolar transistors. Although there have been reports of GaN bipolars from several groups, the development of the GaN bipolar transistor is still in its fundamental stages. In the case of GaN, the usual correlation between common base, Gummel, and common emitter characteristics does ...
L. McCarthy +7 more
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Dramatic progress in GaN electronics has led to increased interest in bipolar transistors. Although there have been reports of GaN bipolars from several groups, the development of the GaN bipolar transistor is still in its fundamental stages. In the case of GaN, the usual correlation between common base, Gummel, and common emitter characteristics does ...
L. McCarthy +7 more
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Modeling HBT ledge variations for insight into GaAs HBT reliability
2001 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.01TH8602), 2002We have modeled the effects of various different extrinsic base passivation ledge parameters - material composition, thickness, width, and spacing from ledge to base contact - to determine the microscopic effects these parameters have on electron-hole recombination density. Obviously, recombination density affects current gain. Additionally, it is well
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IEEE Transactions on Electron Devices, 2001
The variation of heterojunction bipolar transistor (HBT) bandwidth with scaling is reviewed. High bandwidths are obtained by thinning the base and collector layers, increasing emitter current density, decreasing emitter contact resistivity, and reducing the emitter and collector junction widths.
M.J.W. Rodwell +17 more
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The variation of heterojunction bipolar transistor (HBT) bandwidth with scaling is reviewed. High bandwidths are obtained by thinning the base and collector layers, increasing emitter current density, decreasing emitter contact resistivity, and reducing the emitter and collector junction widths.
M.J.W. Rodwell +17 more
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Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122), 2002
We report wide-band amplifiers using AlInAs/GaInAs transferred-substrate Heterojunction Bipolar Transistors (HBTs). A distributed amplifier exhibits 11.5 dB gain and 80 GHz bandwidth. Lumped amplifiers exhibit 8.2 dB gain with 80 GHz bandwidth and 18 dB gain with 50 GHz bandwidth and 400 GHz gain-bandwidth product, record for a single-stage amplifier.
S. Krishnan +5 more
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We report wide-band amplifiers using AlInAs/GaInAs transferred-substrate Heterojunction Bipolar Transistors (HBTs). A distributed amplifier exhibits 11.5 dB gain and 80 GHz bandwidth. Lumped amplifiers exhibit 8.2 dB gain with 80 GHz bandwidth and 18 dB gain with 50 GHz bandwidth and 400 GHz gain-bandwidth product, record for a single-stage amplifier.
S. Krishnan +5 more
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The Fourth International Workshop on Junction Technology, 2004. IWJT '04., 2004
In this paper, a SiGe HBT was described, which was based on a unique process technology. To characterize the SiGe HBT, HP8510C network analyzer, HP83650A synthetic signal sources, HP8517b S parameter measuring systems etc. have been used for radio frequency performances. The measurements showed the satisfactory results.
null Rongkan Liu +11 more
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In this paper, a SiGe HBT was described, which was based on a unique process technology. To characterize the SiGe HBT, HP8510C network analyzer, HP83650A synthetic signal sources, HP8517b S parameter measuring systems etc. have been used for radio frequency performances. The measurements showed the satisfactory results.
null Rongkan Liu +11 more
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A comparison of the effects of gamma irradiation on SiGe HBT and GaAs HBT technologies
IEEE Transactions on Nuclear Science, 2000A comparison of the effects of gamma irradiation on silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) and gallium-arsenide (GaAs) HBT technologies is reported, DC and radiofrequency (RF) performance as well as the low frequency noise are investigated for gamma doses up to 1 Mrad(Si).
S. Zhang +7 more
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2007
The aim of this chapter has been to provide a background for bipolar compact modelling. The main improvements of the VBIC model over the SGP model is the addition of Early voltage effect, quasi-saturation, substrate parasitic, avalanche multiplication, self-heating and modelling of the parasitic pnp transistor. A methodology to extract and optimise d.c.
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The aim of this chapter has been to provide a background for bipolar compact modelling. The main improvements of the VBIC model over the SGP model is the addition of Early voltage effect, quasi-saturation, substrate parasitic, avalanche multiplication, self-heating and modelling of the parasitic pnp transistor. A methodology to extract and optimise d.c.
openaire +1 more source