Results 181 to 190 of about 12,328 (233)
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Reliability investigation in SiGe HBT's
2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (IEEE Cat. No.01EX496), 2002This paper addresses some reliability properties of SiGe HBTs. We first verified that no major problems were related to the SiGe layer through DC life tests. In the second step, we investigated the hot carrier influence on the DC, noise and microwave properties of these devices.
J. Kuchenbecker +9 more
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Solid-State Electronics, 1997
Abstract This article discusses the use of heterostructure bipolar transistor (HBT) ICs in telecommunication system products. Of particular interest is the fit between HBT ICs and telecommunication system needs, in terms of commercial criteria as well as performance.
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Abstract This article discusses the use of heterostructure bipolar transistor (HBT) ICs in telecommunication system products. Of particular interest is the fit between HBT ICs and telecommunication system needs, in terms of commercial criteria as well as performance.
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Calculation of the power capabilities of HBT amplifiers based on a new physical HBT model
International Journal of Microwave and Millimeter-Wave Computer-Aided Engineering, 1996A novel model for the simulation of the microwave power capabilities of HBTs is presented. The model is based on physical analytical formulation of the terminal currents as functions of the base-emitter and base-collector voltages. It takes into account the unequal thermal distribution of temperature for multifinger HBT devices, the impact ionization ...
V. Krozer +5 more
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2008 IEEE Compound Semiconductor Integrated Circuits Symposium, 2008
We discuss the many factors affecting the reliability of GaAs HBTs that we have encountered starting from the early days of AlGaAs-emitter HBTs through the present day use of InGaP-emitter HBTs. We discuss both wearout and infancy failure modes and try to distinguish fundamental (i.e., unavoidable) from nonfundamental failure modes.
B. Yeats +12 more
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We discuss the many factors affecting the reliability of GaAs HBTs that we have encountered starting from the early days of AlGaAs-emitter HBTs through the present day use of InGaP-emitter HBTs. We discuss both wearout and infancy failure modes and try to distinguish fundamental (i.e., unavoidable) from nonfundamental failure modes.
B. Yeats +12 more
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A multifunctional HBT technology
12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC), 2002A self-aligned AlGaAs/GaAs HBT technology has been developed for the fabrication of both high-performance microwave circuits and high-performance digital circuits. The technology provides transistors with high f/sub max/ (up to 218 GHz), high f/sub t/ (up to 98 GHz), and high efficiency (power added efficiency higher than 67.8% at 10 GHz) microwave ...
W.J. Ho +8 more
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Modeling and characterization of HBT limits
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2020In this paper, we present an overview of electrothermal runaway and mixed-mode degradation in HBTs. Both these effects limit the bias up to which an HBT can be used in circuit design. For electrothermal runaway, we discuss the DC case, with and without externally applied base resistance, and also the “pulsed SOA” case, which is most relevant to RF ...
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The Research on Process Technology of SiGe/Si HBT
Procedia Engineering, 2011 SiGe/Si HBT is a novel Si based device, compared with traditional BJT, SiGe/Si HBT has some advantages including high current gain, excellent frequency property and lower noise, energy band engineering and doping engineering introduced bring design ...
Yang Ruixia
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Agilent HBT model extraction and circuit verification for InGaP/GaAs HBT
2008 11th IEEE International Conference on Communication Technology, 2008Agilent HBT model parameters are extracted from the multi-finger InGaP/ GaAs HBT fabricated in 2 um process. Comparison has been made between measured and simulated data for verification purpose. With frequency range from DC to 20.05 GHz, this model is suitable for simulating InGaP/ GaAs HBT AC small -signal characterization. Using this model to verify
null Jian Han +3 more
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Solid-State Electronics, 1995
Abstract SiGe is just on an upswing. Attractive potentials can be foreseen and outstanding performance was even demonstrated, e.g. high frequencies above 100 GHz, low noise below 0.5 dB at 2 GHz, high transconductances around 400 mS/mm. A further driving force for the growing engagement with SiGe is its basic compatibility to standard Si-technology ...
U König, H Dämbkes
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Abstract SiGe is just on an upswing. Attractive potentials can be foreseen and outstanding performance was even demonstrated, e.g. high frequencies above 100 GHz, low noise below 0.5 dB at 2 GHz, high transconductances around 400 mS/mm. A further driving force for the growing engagement with SiGe is its basic compatibility to standard Si-technology ...
U König, H Dämbkes
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Solid-State Electronics, 1995
Abstract Recent advances in heterojunction bipolar transistor (HBT) technology enable trial uses in some systems utilizing advantages of HBTs such as high power handling capability, high current drive capability, low 1 f noise characteristics, with high frequency and high speed performance.
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Abstract Recent advances in heterojunction bipolar transistor (HBT) technology enable trial uses in some systems utilizing advantages of HBTs such as high power handling capability, high current drive capability, low 1 f noise characteristics, with high frequency and high speed performance.
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