Results 181 to 190 of about 32,080 (222)
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2007
The aim of this chapter has been to provide a background for bipolar compact modelling. The main improvements of the VBIC model over the SGP model is the addition of Early voltage effect, quasi-saturation, substrate parasitic, avalanche multiplication, self-heating and modelling of the parasitic pnp transistor. A methodology to extract and optimise d.c.
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The aim of this chapter has been to provide a background for bipolar compact modelling. The main improvements of the VBIC model over the SGP model is the addition of Early voltage effect, quasi-saturation, substrate parasitic, avalanche multiplication, self-heating and modelling of the parasitic pnp transistor. A methodology to extract and optimise d.c.
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Modeling HBT ledge variations for insight into GaAs HBT reliability
2001 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.01TH8602), 2002We have modeled the effects of various different extrinsic base passivation ledge parameters - material composition, thickness, width, and spacing from ledge to base contact - to determine the microscopic effects these parameters have on electron-hole recombination density. Obviously, recombination density affects current gain. Additionally, it is well
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2007
A retrospective look at the development and production of SiGe HBTs reveals that significant challenges have been overcome to make SiGe now a mature technology. In this chapter, key developments including the SiGe epitaxial growth process, overall integration methods, and elimination of yield-limiting defects to enable production of highly integrated ...
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A retrospective look at the development and production of SiGe HBTs reveals that significant challenges have been overcome to make SiGe now a mature technology. In this chapter, key developments including the SiGe epitaxial growth process, overall integration methods, and elimination of yield-limiting defects to enable production of highly integrated ...
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Sensing mechanism of HBT based F anion fluorescence sensor: A theoretical study
Sensors and Actuators B: Chemical, 2019Xue-Fang Yu, Bo Xiao, Yanchun Li
exaly