Results 131 to 140 of about 12,288 (254)

Dual‐Organelle Secretome Conjugation and Organ‐Uptake Tracking (DuO‐SCOUT) Enables Deep and Sensitive Mapping of the Secreted Proteins

Advanced Science, EarlyView.
A novel dual‐organelle proximity labeling platform, DuO‐SCOUT, decodes the complex landscape of systemic organ‐organ communication by capturing both classical and unconventional secretomes. Application in metabolic models maps the adipose‐to‐brain secretory relay, identifying selective extra‐hypothalamic sites for adipose‐derived factors and expanding ...
Fenglian Yang, Rui Qian, Jiaxing Song, Xingqi Meng, Jin Young Kim, Kwok On Lai, Li Wang, Liang Zhang   +7 more
wiley   +1 more source

Experimental and Numerical Study on Various Liquid-Cooled Heat Sinks Including Topology Optimization. [PDF]

Micromachines (Basel)
Shi G, Dai Y, Yu Z, Zeng X, Tan C, Zhang H, Yang G, Qin F.   +7 more
europepmc   +1 more source

The Digital Heat Sink

CKS FRAMEWORK PAPER - Registry ID: CKS-0-2026. Dependencies: CKS foundation only. This is a constituent derivation of the Cymatic K-Space Mechanics (CKS) framework extending into 0. The paper is subject to the Global Falsification Protocol [CKS-TEST-1-2026]: if the 1/32 Hz substrate quantization is absent in relevant precision measurements, this ...
openaire   +2 more sources

Light‐Absorbing‐Layer‐Free Flash Lamp Annealing for High‐Throughput Fabrication of All‐Solution‐Processed Oxide Electronics

Advanced Science, EarlyView.
A flash lamp annealing strategy using a mullite chuck enables rapid conversion of sol–gels to metal oxides on silicon and ultra‐thin glass without extra light‐absorbing layers. Direct light absorption initiates the transformation, and the low thermal conductivity of mullite promotes heat accumulation.
Zetong Li, Wei He, Guangji Wang, Jingwei Zhang, Zhimin Chai, Xinchun Lu   +5 more
wiley   +1 more source

Evaluation of Imidazolium Ionenes: Solid-Solid Phase Change Materials as Heat Sinks. [PDF]

Polymers (Basel)
Arriaza-Echanes C, Krüger GI, Comesaña-Gándara B, Terraza CA, Sanhueza L, Ortiz PA.   +5 more
europepmc   +1 more source

China's Low‐Carbon Energy Transition Over the Past Two Decades: Experiences and Implications

Advanced Science, EarlyView.
China's low‐carbon energy transition features a brief decline and subsequent rebound in coal consumption, alongside the rapid expansion of renewable energy. This study develops a stage‐based analytical framework to explain this evolution from the perspectives of economic development, energy security, and environmental sustainability, revealing how ...
Yu Liu, Zhiyu Tian, Zhengxian Zhang, Xinbei Li   +3 more
wiley   +1 more source

Magneto-hydrodynamic behavior of magnetic nanofluids in mini-channel heat sinks for electronics cooling. [PDF]

Sci Rep
Bhattacharyya S, Al Taisan N, Khatri S, Souayeh B, Alfannakh H, Vishwakarma DK.   +5 more
europepmc   +1 more source

Twisted MoS2 Bilayers as Functional Elements in Memtransistors: Hysteresis, Optical Signatures, and Photocurrent Kinetics

Advanced Electronic Materials, EarlyView.
ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash, Ilya Eliseyev, Valery Davydov, Heiko O. Jacobs, Jörg Pezoldt   +4 more
wiley   +1 more source

Performance evaluation of heat sinks with calcium nitrate tetrahydrate phase change material for electronic cooling. [PDF]

Sci Rep
Mallela G, Shajahan MI, Benim AC, Sharaf M, Lopez E.   +4 more
europepmc   +1 more source

Low Thermal Resistance Architectures for AlGaN‐Based Semiconductor Devices

Advanced Electronic Materials, EarlyView.
Engineering channel thickness and substrate material significantly improves thermal management in AlGaN RF devices. A 5 nm AlGaN channel integrated on an AlN substrate achieved a record‐low thermal resistance of 3.96 K·mm${\rm K}\cdot{\rm mm}$/W, representing an 88.7% reduction compared with 500 nm AlGaN‐on‐sapphire devices.
Kidus Guye, Davide Orlandini, Seungheon Shin, Andy Allerman, Damena Agonafer, Siddharth Rajan, Samuel Graham   +6 more
wiley   +1 more source