Results 181 to 190 of about 32,253 (225)

Hydrogen and helium bubbles in silicon

Materials Science and Engineering: R: Reports, 2000
Abstract Hydrogen is a quite common impurity in semiconductor-silicon technology: it is unintentionally but unavoidably added to the silicon after crystal growth during wafer processing, and continues to be present during wet oxidation, film depositions, etching and annealing steps.
G. F. Cerofolini, CORNI, Federico, FRABBONI, Stefano, NOBILI, Carlo Emanuele, OTTAVIANI, Giampiero, TONINI, Rita   +5 more
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Planar helium bubble arrays in nickel

Journal of Nuclear Materials, 1986
Abstract Annealed nickel samples were thinned for transmission electron microscopy, and pre-implanted with 3 keV helium ions at 300 K to create submicroscopic helium-vacancy clusters. The samples were then irradiated with 95 eV helium ions to a dose of 1 × 10 22 He + /m 2 , again at 300 K.
M. D'Olieslaeger, L. De Schepper, G. Knuyt, L.M. Stals   +3 more
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Irregular Helium Bubbles In Niobium Alloys

Journal of Microscopy, 1979
SUMMARYHelium bubbles have been produced in niobium‐1% Zr by ion implantation and their growth has been studied by transmission electron microscopy of annealed specimens. Bubbles are normally faceted and develop from tetrakaidodecahedra at short times to cuboids bounded by {100} faces after long annealing periods.
S. K. Tyler, P. J. Goodhew
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Helium bubble precipitation at dislocation networks

Scripta Materialia, 2012
We report on a study of nanoscale He bubble precipitation and growth at a twist grain boundary in two face-centered cubic materials. Experimentally, the twist boundary in Au captures all the He in the sample, forming equal-sized bubbles at the dislocation intersection junctions.
J. Hetherly, E. Martinez, Z.F. Di, M. Nastasi, A. Caro   +4 more
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Helium Bubble Growth in Vanadium

1981
Helium bubble growth in vanadium has been investigated during postimplantation annealing at 950°C. The gas was introduced into 100-μm-thick specimens at room temperature by sequential ion implantation at 220, 140, 120, and 50 keV. This treatment provided a helium concentration of 5 × 1026 atoms/m3 at depths between 200 and 700 nm from the implanted ...
SK Tyler, PJ Goodhew
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Helium bubble nucleation at grain boundaries

Philosophical Magazine A, 1983
Abstract Helium bubble nucleation has been studied at grain boundaries in a ternary austenitic steel after helium implantation in the temperature range 450–600°C. Transmission electron microscopy shows that all interfaces except the coherent twin are preferred nucleation sites for bubbles, and that the density of bubbles is greater on interfaces ...
P. L. Lane, P. J. Goodhew
openaire   +1 more source

Color helium bubble flow-visualization technique

Journal of Aircraft, 1989
Color helium bubble flow visualization is a new and unique technique. Flow visualization in the wind tunnel using color helium bubbles has recently been achieved at the Harbin Aerodynamic Research Institute. Rich and varied color paths are obtained. This paper describes a unique principle of light interference for flow visualization with color helium ...
Zhao Dong, Wang Zhongqi, Zhang Xiaodi, Qin Jialin, Lang Xianzhong   +4 more
openaire   +1 more source

Nucleation of bubbles in liquid helium

Journal of Low Temperature Physics, 1993
We give a brief survey of experiments that have been performed to study the nucleation of bubbles in liquid helium at negative pressures.
H. J. Maris, S. Balibar, M. S. Pettersen
openaire   +1 more source

Helium bubbles in silicon: Structure and optical properties

Applied Physics Letters, 1995
Silicon samples were implanted with 20 keV He at various temperatures. The damage and the size of the He bubbles created during the implantation were measured with Raman spectroscopy and transmission electron microscopy. Room temperature implantation with 2.5×1017 He atoms/ cm2 produced an amorphized layer with a high density of small voids (∼5 nm ...
Siegele, R., Weatherly, G. C., Haugen, H. K., Lockwood, D. J., Howe, L. M.   +4 more
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Electron bubbles in helium clusters. II. Probing superfluidity

The Journal of Chemical Physics, 2006
In this paper we present calculations of electron tunneling times from the ground electronic state of excess electron bubbles in (He4)N clusters (N=6500–107, cluster radius R=41.5–478Å), where the equilibrium bubble radius varies in the range Rb=13.5–17.0Å.
Michael, Rosenblit, Joshua, Jortner
openaire   +2 more sources